Overview
The TPD2EUSB30DRTR, manufactured by Texas Instruments, is a dual-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array. This device is specifically designed to provide robust protection for high-speed differential I/Os, particularly in USB 3.0 applications. It is part of the TPDxEUSB30/A family, which includes the TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 models. These devices are engineered to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard and offer surge protection according to IEC 61000-4-5 specifications.
Key Specifications
| Parameter | Value |
|---|---|
| Package Type | SOT-9X3 (DRT) |
| Pins | 3 |
| Operating Temperature Range (°C) | -40 to 85 |
| Package Quantity | 3,000 (Carrier) |
| Capacitance (Typical) | 0.7 pF (DRT), 0.8 pF (DQA) |
| Dynamic Resistance (Typical) | 0.6 Ω |
| ESD Protection (IEC 61000-4-2) | Level 4 Contact |
| Surge Protection (IEC 61000-4-5) | 5 A (8/20 µs) |
| Break-Down Voltage (DC) | 4.5 V (Typical for TPD2EUSB30A) |
Key Features
- Supports USB 3.0 data rates (5 Gbps)
- IEC 61000-4-2 ESD protection (level 4 contact)
- IEC 61000-4-5 surge protection (5 A, 8/20 µs)
- Low capacitance and dynamic resistance, making it suitable for high-speed differential I/Os
- Space-saving DRT (1 mm × 1 mm) and DQA (2.5 mm × 1 mm) packages
- Flow-through pin mapping for easy board routing
Applications
The TPD2EUSB30DRTR is primarily used in high-speed USB 3.0 applications where robust ESD and surge protection are critical. It is suitable for protecting high-speed differential ports with data rates exceeding 6 Gbps. The device is recommended to be placed close to the USB 3.0 connector to ensure effective protection against ESD and surge events. It is also advised to connect the GND pin to the GND plane of the board through a large VIA to ensure a low impedance path for ESD currents.
Q & A
- What is the primary function of the TPD2EUSB30DRTR?
The primary function of the TPD2EUSB30DRTR is to provide Electrostatic Discharge (ESD) and surge protection for high-speed differential I/Os, particularly in USB 3.0 applications.
- What are the key specifications of the TPD2EUSB30DRTR package?
The TPD2EUSB30DRTR comes in a SOT-9X3 (DRT) package with 3 pins, operates over a temperature range of -40°C to 85°C, and is available in quantities of 3,000 per carrier.
- What level of ESD protection does the TPD2EUSB30DRTR offer?
The TPD2EUSB30DRTR offers ESD protection at level 4 contact according to the IEC 61000-4-2 standard.
- What is the surge protection capability of the TPD2EUSB30DRTR?
The device can handle a surge current of 5 A (8/20 µs) as per the IEC 61000-4-5 specification.
- What is the typical capacitance and dynamic resistance of the TPD2EUSB30DRTR?
The typical capacitance is 0.7 pF for the DRT package, and the dynamic resistance is 0.6 Ω.
- Why is the TPD2EUSB30DRTR suitable for high-speed differential I/Os?
The device is suitable due to its low capacitance, low break-down voltage, and low dynamic resistance, which make it ideal for protecting high-speed differential I/Os.
- How should the GND pin of the TPD2EUSB30DRTR be connected on the board?
The GND pin should be connected to the GND plane of the board through a large VIA to ensure a low impedance path for ESD currents.
- What is the recommended placement of the TPD2EUSB30DRTR on the board?
The device should be placed close to the USB 3.0 connector to ensure effective protection against ESD and surge events.
- Is the TPD2EUSB30DRTR RoHS compliant?
- What is the status of the TPD2EUSB30DRTR in terms of production and new designs?
