Overview
The SN74CB3T3125RGYR is a high-speed, quadruple FET bus switch produced by Texas Instruments. This device is designed to provide low ON-state resistance and minimal propagation delay, making it ideal for high-bandwidth applications such as broadband communications, networking, and data-intensive computing systems. The SN74CB3T3125RGYR features four 1-bit bus switches with separate output-enable inputs, allowing it to be used as four individual 1-bit switches or as a single 4-bit bus switch. It supports bidirectional data flow with near-zero propagation delay and has low input/output capacitance to minimize capacitive loading and signal distortion.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VCC Operating Range | 2.3 to 3.6 | V |
| ON-State Resistance (ron) | 4 Ω (Typ) | Ω |
| Input/Output Capacitance (Cio(OFF)) | 3.5 pF (Typ) | pF |
| Switching Frequency (fOE) | 20 MHz (Max) | MHz |
| ESD Performance | 2000-V Human-Body Model (A114-B, Class II), 1000-V Charged-Device Model (C101) | V |
| Package Types | VQFN (14), TSSOP (14), TVSOP (14) | - |
| Body Size (Nom) | VQFN: 3.50 mm × 3.50 mm, TSSOP: 5.00 mm × 4.40 mm, TVSOP: 3.60 mm × 4.40 mm | mm |
| Power Consumption (ICC) | 0.6 mA (Typ) | mA |
Key Features
- Rail-to-rail switching on data I/O ports for 0-V to 5-V signaling levels
- Bidirectional data flow with near-zero propagation delay
- Low and flat ON-state resistance (ron) for minimal propagation delay
- Low input and output capacitance to minimize capacitive loading and signal distortion
- Fast switching frequency (fOE = 20 MHz Max)
- Data and control inputs with undershoot clamp diodes
- 5-V tolerant I/Os with the device powered up or powered down
- Control inputs can be driven by TTL, 5-V, or 3.3-V CMOS outputs
- Supports partial-power-down mode operation using Ioff
- Latch-up performance exceeds 250 mA per JESD 17
Applications
- Digital applications: level translation, USB interface, bus isolation
- Low-power portable equipment
- Broadband communications and networking
- Data-intensive computing systems
- Differential signal interfaces and bus isolation
- Optical modules and optical networking: video over fiber
Q & A
- What is the SN74CB3T3125RGYR used for?
The SN74CB3T3125RGYR is used as a high-speed FET bus switch in various applications including broadband communications, networking, and data-intensive computing systems.
- What are the key features of the SN74CB3T3125RGYR?
Key features include rail-to-rail switching, bidirectional data flow, low ON-state resistance, low input/output capacitance, and fast switching frequency.
- What are the supported voltage levels for the SN74CB3T3125RGYR?
The device supports 0-V to 5-V signaling levels and can operate with VCC ranging from 2.3 V to 3.6 V.
- How does the SN74CB3T3125RGYR handle partial-power-down applications?
The device is fully specified for partial-power-down applications using Ioff, which prevents damaging current backflow when the device is powered down.
- What are the ESD performance ratings of the SN74CB3T3125RGYR?
The device has ESD performance tested per JESD 22, with ratings of 2000-V Human-Body Model (A114-B, Class II) and 1000-V Charged-Device Model (C101).
- What types of packages are available for the SN74CB3T3125RGYR?
The device is available in VQFN (14), TSSOP (14), and TVSOP (14) packages.
- How does the SN74CB3T3125RGYR minimize signal distortion?
The device minimizes signal distortion through its low input/output capacitance and low ON-state resistance.
- Can the SN74CB3T3125RGYR be used in mixed-mode signal operations?
Yes, the device supports mixed-mode signal operation on all data I/O ports, providing voltage translation that tracks VCC.
- What is the typical power consumption of the SN74CB3T3125RGYR?
The typical power consumption is 0.6 mA.
- How does the SN74CB3T3125RGYR ensure high-impedance state during power up or down?
The high-impedance state is ensured by tying OE to VCC through a pull-up resistor.
