Overview
The LMG5200MOFT, produced by Texas Instruments, is an 80-V, 10-A driver plus GaN half-bridge power stage. This device provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. It consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. The LMG5200 extends the advantages of discrete GaN FETs by offering a more user-friendly interface, making it ideal for applications requiring high-frequency, high-efficiency operation in a small form factor.
Key Specifications
| Parameter | Value |
|---|---|
| Package Type | 9-QFN (6 mm × 8 mm × 2 mm) |
| Operating Temperature Range | -40°C to 125°C |
| Voltage Rating | 80-V Continuous, 100-V Pulsed |
| Current Rating | 10 A |
| GaN FET On-Resistance | 15 mΩ |
| Switching Frequency | Up to 10 MHz |
| Propagation Delay | 29.5 ns Typical |
| Propagation Delay Matching | 2 ns Typical |
| Input Voltage Tolerance | Up to 12 V |
| Supply Rail Undervoltage Lockout Protection | Yes |
| RoHS Status | ROHS3 Compliant |
Key Features
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
Applications
- Wide VIN Multi-MHz Synchronous Buck Converters
- Class D Amplifiers for Audio
- 48-V Point-of-Load (POL) Converters for Telecom, Industrial, and Enterprise Computing
- High Power Density Single- and Three-Phase Motor Drive
Q & A
- What is the LMG5200MOFT?
The LMG5200MOFT is an 80-V, 10-A driver plus GaN half-bridge power stage, providing an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs.
- What are the key components of the LMG5200MOFT?
The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
- What is the voltage rating of the LMG5200MOFT?
The LMG5200MOFT has an 80-V continuous and 100-V pulsed voltage rating.
- What is the maximum switching frequency of the LMG5200MOFT?
The gate driver is capable of up to 10 MHz switching.
- What are the propagation delay and matching specifications of the LMG5200MOFT?
The propagation delay is 29.5 ns typical, and the matching is 2 ns typical.
- Is the LMG5200MOFT suitable for isolated and non-isolated applications?
Yes, it is ideal for both isolated and non-isolated applications.
- What kind of protection does the LMG5200MOFT offer?
The device includes internal bootstrap supply voltage clamping to prevent GaN FET overdrive and supply rail undervoltage lockout protection.
- What are some common applications of the LMG5200MOFT?
Common applications include wide VIN multi-MHz synchronous buck converters, Class D amplifiers for audio, 48-V point-of-load converters, and high power density single- and three-phase motor drives.
- Is the LMG5200MOFT RoHS compliant?
Yes, the LMG5200MOFT is ROHS3 compliant.
- How does the LMG5200MOFT simplify PCB layout?
The package is optimized for easy PCB layout, eliminating the need for underfill, creepage, and clearance requirements.
