Overview
The LM5113-Q1 from Texas Instruments is a high-performance, automotive-grade half-bridge gate driver designed to drive both high-side and low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs. This device is optimized for synchronous buck, boost, or half-bridge configurations, making it suitable for various automotive applications. It features an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs, providing maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V to prevent the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The LM5113-Q1 is available in a 10-pin WSON package with an exposed pad to aid in power dissipation.
Key Specifications
| Parameter | Min | Typical | Max | Unit |
|---|---|---|---|---|
| Output Current (Peak) | -5 | - | 1.2 | A |
| Output Current (Sink) | - | - | 5 | A |
| Operating Temperature Range | -40 | - | 125 | °C |
| High-Side Floating Bias Voltage | - | 5.2 | - | V |
| Pulldown Resistance | - | 0.6 | - | Ω |
| Pullup Resistance | - | 2.1 | - | Ω |
| Propagation Time | - | 28 | - | ns |
| Propagation Delay Matching | - | 1.5 | - | ns |
| Package Type | - | - | - | 10-pin WSON |
Key Features
- Independent high-side and low-side TTL logic inputs, capable of withstanding input voltages up to 14 V regardless of VDD voltage.
- Integrated 100-V bootstrap diode and internal bootstrap supply voltage clamping.
- Split-gate outputs for adjustable turnon and turnoff strength.
- Fast propagation times (28 ns typical) and excellent propagation delay matching (1.5 ns typical).
- Supply rail undervoltage lockout (UVLO) to prevent partial turnon of GaN FETs.
- Low power consumption and high-frequency operation up to several MHz.
- AEC-Q100 qualified with a temperature range of –40°C to 125°C.
- High-side bias voltage internally clamped at 5.2 V to protect GaN FETs.
Applications
- Mobile wireless chargers
- Audio power amplifiers and power supplies
- Current-fed push-pull converters
- Half- and full-bridge converters
- Synchronous buck converters
- Automotive power systems requiring high reliability and efficiency
Q & A
- What is the primary function of the LM5113-Q1?
The LM5113-Q1 is a half-bridge gate driver designed to drive both high-side and low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in synchronous buck, boost, or half-bridge configurations.
- What is the operating temperature range of the LM5113-Q1?
The device operates over a temperature range of –40°C to 125°C.
- What is the peak output current of the LM5113-Q1?
The peak output current is 1.2 A for the source and 5 A for the sink.
- What type of inputs does the LM5113-Q1 have?
The device has independent high-side and low-side TTL logic inputs.
- How does the LM5113-Q1 protect the GaN FETs?
The high-side bias voltage is internally clamped at 5.2 V to prevent the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs.
- What is the purpose of the undervoltage lockout (UVLO) feature?
The UVLO feature prevents the GaN FETs from being partially turned on when the VDD voltage is below the threshold voltage.
- What is the typical propagation time of the LM5113-Q1?
The typical propagation time is 28 ns.
- What is the propagation delay matching of the LM5113-Q1?
The typical propagation delay matching is 1.5 ns.
- In what package is the LM5113-Q1 available?
The device is available in a standard 10-pin WSON package with an exposed pad for thermal dissipation.
- Is the LM5113-Q1 qualified for automotive applications?
Yes, the LM5113-Q1 is AEC-Q100 qualified, making it suitable for automotive applications.
