Overview
The VNS3NV04D-E is a fully autoprotected Power MOSFET designed by STMicroelectronics, utilizing their VIPower M0-3 technology. This device is composed of two monolithic OMNIFET II chips housed in a standard SO-8 package. It is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. The VNS3NV04D-E integrates multiple protection features, making it highly robust and suitable for harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| RDS(on) | 120 mΩ (Typ), 240 mΩ (Max) | mΩ |
| Ilim | 3.5 A | A |
| Vclamp | 40 V | V |
| Package | 8-SOIC (0.154", 3.90mm Width) | |
| Operating Temperature | -40°C to 150°C (TJ) | °C |
| Thermal Resistance Junction-lead | 30 °C/W (Max) | °C/W |
| Thermal Resistance Junction-ambient | 80 °C/W (Max) | °C/W |
| Input Threshold Voltage | 0.5 to 2.5 V | V |
| Supply Current from Input Pin | 100 to 150 µA | µA |
Key Features
- Linear Current Limitation: Limits the drain current to Ilim regardless of the input pin voltage.
- Thermal Shutdown: Protects the device from overheating.
- Short Circuit Protection: Ensures the device remains operational in case of short circuits.
- Overvoltage Clamp: Internally set at 45 V, providing rugged avalanche characteristics.
- Integrated Clamp: Protects against overvoltage conditions.
- Low Current Drawn from Input Pin: Small DC current (typ. 100 µA) for internal circuitry.
- Diagnostic Feedback: Fault feedback detectable through the input pin.
- ESD Protection: Enhanced protection against electrostatic discharge.
- Direct Access to the Gate of the Power MOSFET: Allows for analog driving.
- Compatibility with Standard Power MOSFETs: Can be used as a replacement in various applications.
Applications
The VNS3NV04D-E is suitable for a variety of applications, including:
- Power distribution and load driving in automotive and industrial systems.
- Driving inductive loads due to its overvoltage clamp and rugged avalanche characteristics.
- Replacement of standard Power MOSFETs in DC to 50 kHz applications.
- Systems requiring robust protection features such as thermal shutdown, short circuit protection, and ESD protection.
Q & A
- What is the VNS3NV04D-E?
The VNS3NV04D-E is a fully autoprotected Power MOSFET designed by STMicroelectronics, utilizing their VIPower M0-3 technology.
- What package type does the VNS3NV04D-E use?
The device is housed in a standard SO-8 package.
- What are the key protection features of the VNS3NV04D-E?
The device includes linear current limitation, thermal shutdown, short circuit protection, overvoltage clamp, and ESD protection.
- What is the maximum operating temperature of the VNS3NV04D-E?
The operating temperature range is -40°C to 150°C (TJ).
- What is the typical RDS(on) value of the VNS3NV04D-E?
The typical RDS(on) value is 120 mΩ.
- How does the VNS3NV04D-E handle overvoltage conditions?
The device has an internally set overvoltage clamp at 45 V, along with rugged avalanche characteristics.
- Can the VNS3NV04D-E be used as a replacement for standard Power MOSFETs?
Yes, it is designed to replace standard Power MOSFETs in applications from DC to 50 kHz.
- What is the maximum current output of the VNS3NV04D-E?
The maximum current output is 3.5 A.
- How does the VNS3NV04D-E provide diagnostic feedback?
Fault feedback can be detected by monitoring the voltage at the input pin.
- Is the VNS3NV04D-E still in production?
No, the VNS3NV04D-E is listed as obsolete and no longer manufactured.
