VND5N07-E
  • Share:

STMicroelectronics VND5N07-E

Manufacturer No:
VND5N07-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC PWR DRIVER N-CHANNEL 1:1 DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology. It is intended for replacement of standard Power MOSFETs in applications ranging from DC to 50 KHz. This device integrates several protection features, including built-in thermal shutdown, linear current limitation, and overvoltage clamp, which protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin, enhancing diagnostic capabilities.

Key Specifications

Parameter Test Conditions Min. Typ. Max. Unit
VDSn (Drain-Source voltage) VINn = 0 V - - Internally clamped V
VINn (Input voltage) - - - 18 V
IDn (Drain current) - - - Internally limited A
VCLAMP (Drain-Source clamp voltage) VIN = 0 V; ID = 200 mA 60 70 80 V
RDS(on) (Static drain-source on resistance) VIN = 10 V; ID = 2.5 A - 200 -
Tj (Operating junction temperature) - - - Internally limited °C
Tc (Case operating temperature) - - - Internally limited °C
Tstg (Storage temperature) - -55 - 150 °C

Key Features

  • Linear current limitation: Limits the drain current to a specified value, protecting the device from overcurrent conditions.
  • Thermal shutdown: Automatically shuts down the device when the junction temperature exceeds a certain threshold (minimum 150 °C).
  • Short circuit protection: Protects the device against short circuit conditions by limiting the current and shutting down if necessary.
  • Integrated clamp: Provides overvoltage protection by clamping the drain-source voltage to a safe level (70 V).
  • Low current drawn from input pin: Minimizes the current drawn from the input pin, reducing power consumption.
  • Diagnostic feedback through input pin: Allows for fault detection by monitoring the voltage at the input pin.
  • ESD protection: Protects the device against electrostatic discharge (ESD) up to 2000 V.
  • Direct access to the gate of the power MOSFET (analog driving): Enables direct control of the power MOSFET gate, allowing for analog driving.
  • Compatibility with standard Power MOSFETs: Designed to replace standard Power MOSFETs in various applications.

Applications

The VND5N07-E is suitable for a wide range of applications, including:

  • Automotive systems: Due to its robust protection features and compatibility with harsh automotive environments.
  • Industrial control systems: For applications requiring reliable and protected power switching.
  • Power supplies and DC-DC converters: Where high reliability and protection against overcurrent and overvoltage are crucial.
  • Motor control and drive systems: For driving inductive loads and ensuring safe operation under various conditions.

Q & A

  1. What is the VND5N07-E designed for?

    The VND5N07-E is designed to replace standard Power MOSFETs in applications from DC to 50 KHz using STMicroelectronics® VIPower® M0 technology.

  2. What are the key protection features of the VND5N07-E?

    The device includes linear current limitation, thermal shutdown, short circuit protection, integrated clamp, and ESD protection.

  3. How does the VND5N07-E provide diagnostic feedback?

    Diagnostic feedback is provided through the input pin, allowing users to monitor the voltage for fault detection.

  4. What is the maximum drain-source clamp voltage of the VND5N07-E?

    The maximum drain-source clamp voltage is 70 V).

  5. What is the operating junction temperature range of the VND5N07-E?

    The operating junction temperature is internally limited, but it typically does not exceed 150 °C).

  6. Is the VND5N07-E compatible with standard Power MOSFETs?

    Yes, the VND5N07-E is designed to be compatible with standard Power MOSFETs).

  7. What types of applications is the VND5N07-E suitable for?

    The VND5N07-E is suitable for automotive systems, industrial control systems, power supplies, DC-DC converters, and motor control systems).

  8. What is the maximum ESD protection level of the VND5N07-E?

    The device provides ESD protection up to 2000 V).

  9. How does the linear current limitation feature work in the VND5N07-E?

    The linear current limitation feature limits the drain current to a specified value (typically 5 A), protecting the device from overcurrent conditions).

  10. What is the storage temperature range for the VND5N07-E?

    The storage temperature range is from -55 °C to 150 °C).

Product Attributes

Switch Type:General Purpose
Number of Outputs:1
Ratio - Input:Output:1:1
Output Configuration:Low Side
Output Type:N-Channel
Interface:On/Off
Voltage - Load:55V (Max)
Voltage - Supply (Vcc/Vdd):Not Required
Current - Output (Max):3.5A
Rds On (Typ):200mOhm (Max)
Input Type:Non-Inverting
Features:- 
Fault Protection:Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.38
272

Please send RFQ , we will respond immediately.

Same Series
VND5N07-1-E
VND5N07-1-E
IC PWR DRIVER N-CHANNEL 1:1 IPAK
VND5N07-E
VND5N07-E
IC PWR DRIVER N-CHANNEL 1:1 DPAK
RT9701GB
RT9701GB
IC PWR SWITCH N-CHAN 1:1 SOT23-5

Similar Products

Part Number VND5N07-E VND5N07-1
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
Switch Type General Purpose General Purpose
Number of Outputs 1 1
Ratio - Input:Output 1:1 1:1
Output Configuration Low Side Low Side
Output Type N-Channel N-Channel
Interface On/Off On/Off
Voltage - Load 55V (Max) 55V (Max)
Voltage - Supply (Vcc/Vdd) Not Required Not Required
Current - Output (Max) 3.5A 3.5A
Rds On (Typ) 200mOhm (Max) 200mOhm (Max)
Input Type Non-Inverting Non-Inverting
Features - -
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252 (D-Pak) I-PAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

IPS160HFTR
IPS160HFTR
STMicroelectronics
SINGLE CHANNEL HIGH-SIDE SWITCHE
BTS716GXUMA1
BTS716GXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
ULN2003LVDR
ULN2003LVDR
Texas Instruments
TRANS 7NPN DARL 8V 0.5A 16SOIC
TPS22975DSGT
TPS22975DSGT
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8WSON
VNQ860SP-E
VNQ860SP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO10
VN820-B513TR
VN820-B513TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 P2PAK
VND5N07
VND5N07
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 DPAK
VNQ810M
VNQ810M
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
TPS2031DRG4
TPS2031DRG4
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8SOIC
VND920-E
VND920-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
VN5016AJ-E
VN5016AJ-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
VND5004BSP30TR-E
VND5004BSP30TR-E
STMicroelectronics
IC PWR SWITCH N-CH MULTIPWRSO-30

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA