Overview
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology. It is intended for replacement of standard Power MOSFETs in applications ranging from DC to 50 KHz. This device integrates several protection features, including built-in thermal shutdown, linear current limitation, and overvoltage clamp, which protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin, enhancing diagnostic capabilities.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDSn (Drain-Source voltage) | VINn = 0 V | - | - | Internally clamped | V |
| VINn (Input voltage) | - | - | - | 18 | V |
| IDn (Drain current) | - | - | - | Internally limited | A |
| VCLAMP (Drain-Source clamp voltage) | VIN = 0 V; ID = 200 mA | 60 | 70 | 80 | V |
| RDS(on) (Static drain-source on resistance) | VIN = 10 V; ID = 2.5 A | - | 200 | - | mΩ |
| Tj (Operating junction temperature) | - | - | - | Internally limited | °C |
| Tc (Case operating temperature) | - | - | - | Internally limited | °C |
| Tstg (Storage temperature) | - | -55 | - | 150 | °C |
Key Features
- Linear current limitation: Limits the drain current to a specified value, protecting the device from overcurrent conditions.
- Thermal shutdown: Automatically shuts down the device when the junction temperature exceeds a certain threshold (minimum 150 °C).
- Short circuit protection: Protects the device against short circuit conditions by limiting the current and shutting down if necessary.
- Integrated clamp: Provides overvoltage protection by clamping the drain-source voltage to a safe level (70 V).
- Low current drawn from input pin: Minimizes the current drawn from the input pin, reducing power consumption.
- Diagnostic feedback through input pin: Allows for fault detection by monitoring the voltage at the input pin.
- ESD protection: Protects the device against electrostatic discharge (ESD) up to 2000 V.
- Direct access to the gate of the power MOSFET (analog driving): Enables direct control of the power MOSFET gate, allowing for analog driving.
- Compatibility with standard Power MOSFETs: Designed to replace standard Power MOSFETs in various applications.
Applications
The VND5N07-E is suitable for a wide range of applications, including:
- Automotive systems: Due to its robust protection features and compatibility with harsh automotive environments.
- Industrial control systems: For applications requiring reliable and protected power switching.
- Power supplies and DC-DC converters: Where high reliability and protection against overcurrent and overvoltage are crucial.
- Motor control and drive systems: For driving inductive loads and ensuring safe operation under various conditions.
Q & A
- What is the VND5N07-E designed for?
The VND5N07-E is designed to replace standard Power MOSFETs in applications from DC to 50 KHz using STMicroelectronics® VIPower® M0 technology.
- What are the key protection features of the VND5N07-E?
The device includes linear current limitation, thermal shutdown, short circuit protection, integrated clamp, and ESD protection.
- How does the VND5N07-E provide diagnostic feedback?
Diagnostic feedback is provided through the input pin, allowing users to monitor the voltage for fault detection.
- What is the maximum drain-source clamp voltage of the VND5N07-E?
The maximum drain-source clamp voltage is 70 V).
- What is the operating junction temperature range of the VND5N07-E?
The operating junction temperature is internally limited, but it typically does not exceed 150 °C).
- Is the VND5N07-E compatible with standard Power MOSFETs?
Yes, the VND5N07-E is designed to be compatible with standard Power MOSFETs).
- What types of applications is the VND5N07-E suitable for?
The VND5N07-E is suitable for automotive systems, industrial control systems, power supplies, DC-DC converters, and motor control systems).
- What is the maximum ESD protection level of the VND5N07-E?
The device provides ESD protection up to 2000 V).
- How does the linear current limitation feature work in the VND5N07-E?
The linear current limitation feature limits the drain current to a specified value (typically 5 A), protecting the device from overcurrent conditions).
- What is the storage temperature range for the VND5N07-E?
The storage temperature range is from -55 °C to 150 °C).
