STTH8R04DI
  • Share:

STMicroelectronics STTH8R04DI

Manufacturer No:
STTH8R04DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 400V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH8R04DI is an ultrafast recovery diode produced by STMicroelectronics. This device utilizes ST's advanced 400 V planar Pt doping technology, making it highly suitable for applications in switching mode base drive and transistor circuits. The STTH8R04DI is packaged in an insulated TO-220AC package, which provides electrical insulation up to 2500 V RMS and is ECOPACK®2 compliant, ensuring environmental sustainability.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 400 V
IF(RMS) (RMS forward current) 20 A
IF(AV) (Average forward current, δ = 0.5) 8 A
IFRM (Repetitive peak forward current) 165 A
IFSM (Surge non repetitive forward current) 120 A
Tstg (Storage temperature range) -65 to +175 °C
Tj (Operating junction temperature range) -40 to +175 °C
VF (typ) (Forward voltage drop at Tj = 25°C, IF = 8 A) 0.9 V
trr (typ) (Reverse recovery time at Tj = 25°C, IF = 1 A, dIF/dt = -50 A/μs) 25-50 ns
Rth(j-c) (Junction to case thermal resistance) 5.5 °C/W

Key Features

  • Very low switching losses: Optimized for high-frequency operations, reducing energy losses during switching.
  • High frequency and high pulsed current operation: Suitable for applications requiring high-frequency switching and pulsed current handling.
  • High junction temperature: Can operate up to a junction temperature of 175°C, ensuring reliability in demanding environments.
  • Insulated package: The TO-220AC Ins package provides electrical insulation up to 2500 V RMS, enhancing safety and reliability.
  • ECOPACK®2 compliant: Environmentally friendly packaging that meets stringent environmental standards.

Applications

The STTH8R04DI is designed for use in various high-frequency and high-power applications, including:

  • Switching mode base drive and transistor circuits: Ideal for driving power transistors in switching mode power supplies.
  • Low voltage, high frequency inverters: Suitable for inverter applications requiring high-frequency operation.
  • Free wheeling and polarity protection: Used in circuits that require protection against reverse polarity and free-wheeling diodes.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH8R04DI?

    The maximum repetitive peak reverse voltage (VRRM) is 400 V.

  2. What is the average forward current rating of the STTH8R04DI?

    The average forward current (IF(AV)) is 8 A.

  3. What is the operating junction temperature range of the STTH8R04DI?

    The operating junction temperature range is -40°C to +175°C.

  4. What is the typical forward voltage drop of the STTH8R04DI at 25°C and 8 A?

    The typical forward voltage drop (VF) at 25°C and 8 A is 0.9 V.

  5. What is the reverse recovery time of the STTH8R04DI?

    The reverse recovery time (trr) is typically between 25-50 ns at 25°C, IF = 1 A, and dIF/dt = -50 A/μs.

  6. What type of package does the STTH8R04DI come in?

    The STTH8R04DI comes in an insulated TO-220AC package.

  7. What is the electrical insulation rating of the TO-220AC Ins package?

    The electrical insulation rating is up to 2500 V RMS.

  8. Is the STTH8R04DI ECOPACK® compliant?
  9. What are some typical applications of the STTH8R04DI?

    Typical applications include switching mode base drive and transistor circuits, low voltage high frequency inverters, and free-wheeling and polarity protection.

  10. How do I calculate the conduction losses for the STTH8R04DI?

    Conduction losses can be calculated using the equation: P = 0.83 x IF(AV) + 0.034 x IF2(RMS).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.16
52

Please send RFQ , we will respond immediately.

Same Series
STTH8R04D
STTH8R04D
DIODE GEN PURP 400V 8A TO220AC
STTH8R04G-TR
STTH8R04G-TR
DIODE GEN PURP 400V 8A D2PAK
STTH8R04FP
STTH8R04FP
DIODE GEN PURP 400V 8A TO220FP
STTH8R04G
STTH8R04G
DIODE GEN PURP 400V 8A D2PAK

Similar Products

Part Number STTH8R04DI STTH8R04D
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 400 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8