STTH506B
  • Share:

STMicroelectronics STTH506B

Manufacturer No:
STTH506B
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH506B, developed by STMicroelectronics, is a high-performance ultrafast diode designed using ST's Turbo 2 600 V technology. This component is particularly well-suited for applications in switching power supplies and industrial environments. Its advanced technology ensures efficient operation and reliability in demanding conditions.

Key Specifications

ParameterValue
Maximum Off-State Voltage (VRRM)600 V
Load Current (IF(AV))5 A
Reverse Recovery Time (trr)30 ns
Maximum Forward Voltage (VF)1.1 V
Maximum Forward Impulse Current (IFSM)55 A
Junction Temperature (Tj)175°C
PackageDPAK
MountingSMD

Key Features

  • Ultrafast switching
  • Low reverse current
  • Low thermal resistance
  • Reduces conduction and switching losses
  • ECOPACK2 compliant component

Applications

The STTH506B is recommended for use in switching power supplies and various industrial applications due to its high efficiency and reliability.

Q & A

  1. What is the maximum off-state voltage of the STTH506B?
    The maximum off-state voltage (VRRM) is 600 V.
  2. What is the load current rating of the STTH506B?
    The load current (IF(AV)) is 5 A.
  3. What is the reverse recovery time of the STTH506B?
    The reverse recovery time (trr) is 30 ns.
  4. What is the maximum forward voltage of the STTH506B?
    The maximum forward voltage (VF) is 1.1 V.
  5. What is the maximum forward impulse current of the STTH506B?
    The maximum forward impulse current (IFSM) is 55 A.
  6. What is the junction temperature limit of the STTH506B?
    The junction temperature (Tj) limit is 175°C.
  7. In what package is the STTH506B available?
    The STTH506B is available in the DPAK package.
  8. Is the STTH506B suitable for industrial applications?
    Yes, the STTH506B is well-suited for industrial applications.
  9. Is the STTH506B ECOPACK2 compliant?
    Yes, the STTH506B is ECOPACK2 compliant.
  10. What technology is used in the development of the STTH506B?
    The STTH506B is developed using ST's Turbo 2 600 V technology.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
589

Please send RFQ , we will respond immediately.

Same Series
STTH506D
STTH506D
DIODE GEN PURP 600V 5A TO220AC
STTH506B-TR
STTH506B-TR
DIODE GEN PURP 600V 5A DPAK

Similar Products

Part Number STTH506B STTH506D STTH5R06B STTH5L06B
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 5 A 1.85 V @ 5 A 2.9 V @ 5 A 1.3 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 40 ns 95 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 20 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK TO-220AC DPAK DPAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP