STPSC2006CW
  • Share:

STMicroelectronics STPSC2006CW

Manufacturer No:
STPSC2006CW
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 600V TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC2006CW is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. It is built using a silicon carbide substrate, which allows for a 600 V rating. This diode is characterized by its negligible reverse recovery and minimal capacitive turn-off behavior, making it particularly suitable for Power Factor Correction (PFC) boost diode functions and other high-performance applications.

Key Specifications

ParameterValueUnit
VRRM (Repetitive Peak Reverse Voltage)600V
IF(AV) (Average Forward Current)10A (per diode at Tc = 115 °C, δ = 0.5)
IF(RMS) (Forward RMS Current)18A
IFSM (Surge Non-Repetitive Forward Current)40A (tp = 10 ms sinusoidal, Tc = 25 °C)
Tj (Maximum Operating Junction Temperature)-40 to +175°C
Rth(j-c) (Junction to Case Thermal Resistance)2°C/W (per diode)
VF (Forward Voltage Drop)1.4 to 1.7V (at Tj = 25 °C, IF = 10 A)
IR (Reverse Leakage Current)150 to 1500µA (at Tj = 25 °C to 150 °C, VR = VRRM - 30 V)

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Minimal capacitive turn-off behavior
  • Particularly suitable for PFC boost diode functions
  • Manufactured using a silicon carbide substrate
  • Wide band gap material allowing high voltage ratings
  • ECOPACK® packages available for environmental compliance

Applications

The STPSC2006CW is ideal for high-performance applications, particularly in Power Factor Correction (PFC) boost diode functions. It is also suitable for other applications requiring high voltage and low losses, such as in power supplies, motor drives, and renewable energy systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC2006CW? The maximum repetitive peak reverse voltage is 600 V.
  2. What is the average forward current rating for the STPSC2006CW? The average forward current rating is 10 A per diode at Tc = 115 °C, δ = 0.5.
  3. What is the thermal resistance from junction to case for the STPSC2006CW? The thermal resistance from junction to case is 2 °C/W per diode.
  4. What is the forward voltage drop of the STPSC2006CW at 25 °C and 10 A? The forward voltage drop is between 1.4 V and 1.7 V.
  5. Why is the STPSC2006CW particularly suitable for PFC boost diode functions? It is particularly suitable due to its negligible reverse recovery and minimal capacitive turn-off behavior.
  6. What is the maximum operating junction temperature for the STPSC2006CW? The maximum operating junction temperature is 175 °C.
  7. What type of substrate is used in the STPSC2006CW? The STPSC2006CW is manufactured using a silicon carbide substrate.
  8. What is the surge non-repetitive forward current rating for the STPSC2006CW? The surge non-repetitive forward current rating is 40 A for a 10 ms sinusoidal pulse at Tc = 25 °C.
  9. Does the STPSC2006CW come in environmentally compliant packages? Yes, the STPSC2006CW is available in ECOPACK® packages that meet environmental requirements.
  10. What is the reverse leakage current of the STPSC2006CW at 25 °C and 150 °C? The reverse leakage current is between 150 µA and 1500 µA at Tj = 25 °C to 150 °C, VR = VRRM - 30 V.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:150 µA @ 600 V
Operating Temperature - Junction:-40°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
0 Remaining View Similar

In Stock

$8.74
94

Please send RFQ , we will respond immediately.

Related Product By Categories

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
BAV23QAZ
BAV23QAZ
Nexperia USA Inc.
BAV23QA - DUAL COMMON CATHODE HI
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
STTH6002CPI
STTH6002CPI
STMicroelectronics
DIODE ARRAY GP 200V 30A 3TOPI
BAS40-04Q-13-F
BAS40-04Q-13-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
BAS7004TC
BAS7004TC
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
STPS30150CG
STPS30150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
STTH802CFP
STTH802CFP
STMicroelectronics
DIODE ARRAY GP 200V 4A TO220FP
BAS40-06T-7-F-36
BAS40-06T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAS40-05-7-F-79
BAS40-05-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN