Overview
The M40Z300WMQ6E is a non-volatile RAM (NVRAM) supervisor produced by STMicroelectronics. This device is designed to convert standard low-power SRAM into non-volatile memory, ensuring data retention during power failures. It is part of the M40Z300/W series, which includes both 5V and 3V versions, with the M40Z300WMQ6E specifically operating at 3V. Although not recommended for new designs, it remains a functional component for existing systems.
Key Specifications
| Parameter | Description | Value |
|---|---|---|
| VCC Supply Voltage | Operating voltage range | 2.7 V to 3.6 V |
| Power Fail Detection Voltage (VPFD) | Selected by THS pin | 2.8 V ≤ VPFD ≤ 3.0 V (THS = VSS), 2.5 V ≤ VPFD ≤ 2.7 V (THS = VOUT) |
| Chip Enable Access Propagation Delay | For 3.0 V device | Less than 12 ns |
| Package Type | Package options | 16-lead SOIC, 28-lead SOIC with SNAPHAT® top |
| Operating Temperature | Ambient operating temperature range | 0 to 70 °C, –40 to 85 °C (Grade 6) |
| Power Dissipation | Maximum power dissipation | 1 W |
| Input/Output Capacitance | Input and output capacitance | CIN: 8 pF, COUT: 10 pF |
| Battery Connection | Battery configuration | External battery via SNAPHAT® top |
Key Features
- Precision Power Monitoring and Power Switching: Monitors VCC for out-of-tolerance conditions and switches SRAM power from VCC to the lithium cell during power failures.
- Automatic WRITE-Protection: Write-protects SRAM when VCC is out of tolerance.
- Decoder and Chip Enable Control: Two-input decoder allows control for up to 8 SRAMs (with 2 devices active in parallel).
- Reset Output (RST): Provides a power-on reset output to ensure microprocessors start in a known state.
- Battery Low Pin (BL): Indicates low battery condition.
- RoHS Compliant: Lead-free second level interconnect.
Applications
The M40Z300WMQ6E is suitable for various applications requiring non-volatile memory, including:
- Embedded systems that need data retention during power failures.
- Industrial control systems where data integrity is critical.
- Medical devices that require reliable data storage.
- Aerospace and defense systems needing robust memory solutions.
Q & A
- What is the primary function of the M40Z300WMQ6E?
The primary function is to convert standard low-power SRAM into non-volatile memory, ensuring data retention during power failures.
- What are the operating voltage ranges for the M40Z300WMQ6E?
The operating voltage range is 2.7 V to 3.6 V.
- How does the device handle power failures?
During a power failure, the device switches the SRAM power from VCC to the lithium cell within the SNAPHAT® to maintain data retention.
- What is the purpose of the Threshold Select (THS) pin?
The THS pin selects the power fail detection voltage (VPFD) and supply voltage configuration.
- What types of packages are available for the M40Z300WMQ6E?
The device is available in 16-lead SOIC and 28-lead SOIC packages with a SNAPHAT® top.
- Is the M40Z300WMQ6E RoHS compliant?
Yes, it is RoHS compliant with lead-free second level interconnect.
- What is the significance of the reset output (RST) pin?
The reset output pin ensures that microprocessors start in a known state during power-up.
- How is the battery low condition indicated?
The battery low condition is indicated by the battery low pin (BL).
- What is the typical application of the M40Z300WMQ6E?
It is typically used in embedded systems, industrial control systems, medical devices, and aerospace applications where data retention is critical.
- Is the M40Z300WMQ6E recommended for new designs?
No, it is not recommended for new designs but can be used in existing systems.
