Overview
The ESDA13P70-1U1M is a transient voltage suppressor (TVS) diode from STMicroelectronics, designed to protect sensitive electronics from electrical overstress (EOS), lightning surges, and electrostatic discharges (ESD) in harsh environments. This component is part of the ESDAxxPxxx-1U1M series, which offers high surge current capability, low derating across the temperature range, and fast turn-on times. The ESDA13P70-1U1M is packaged in a compact 1.6 mm x 1.0 mm QFN-2L footprint, making it ideal for space-constrained applications.
Key Specifications
| Parameter | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|
| VRM (Reverse Stand-Off Voltage) | 12.0 | - | - | V |
| IRM (Reverse Leakage Current at VRM) | 100 | - | 200 | nA |
| VBR (Reverse Breakdown Voltage) | 12.5 | 13.0 | 13.5 | V |
| VF (Forward Voltage) | - | 0.75 | - | V |
| VCL (ESD Clamping Voltage) | - | 13.7 | - | V |
| EOS Clamping Voltage (8/20µs, IPP = 10 A) | 14.2 | - | 16.0 | V |
| Rd (Dynamic Resistance) | - | 0.09 | - | Ω |
| CI/O-GND (Line Capacitance) | - | 390 | - | pF |
| Tstg (Storage Junction Temperature Range) | -55 | - | 150 | °C |
| Tj (Maximum Operating Junction Temperature) | -55 | - | 150 | °C |
Key Features
- Single line unidirectional EOS and ESD protection diode.
- Protects one I/O line or power line.
- Reverse stand-off voltage range from 12.0 V.
- Low leakage current at VRM.
- High peak pulse power (8/20 µs) up to 1400 W.
- Low power derating across the temperature range.
- Fast turn-on and low clamping voltage.
- Compact 1.6 mm x 1.0 mm QFN-2L package, saving board space.
- ECOPACK2 ROHS compliant component.
- Complies with IEC 61000-4-5 (Lightning) and IEC 61000-4-2 level 4.
Applications
- USB type-C Vbus and USB-PD up to 20 V.
- Battery protection (Vbatt) and charger ports.
- Power supply line protection.
- Hard disks and SSDs.
- Portable multimedia devices and accessories.
- Industrial applications.
- Medical and healthcare equipment.
Q & A
- What is the primary function of the ESDA13P70-1U1M?
The ESDA13P70-1U1M is designed to protect sensitive electronics from electrical overstress (EOS), lightning surges, and electrostatic discharges (ESD).
- What is the reverse stand-off voltage of the ESDA13P70-1U1M?
The reverse stand-off voltage (VRM) is 12.0 V.
- What is the maximum operating junction temperature of the ESDA13P70-1U1M?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the peak pulse power rating of the ESDA13P70-1U1M?
The peak pulse power rating is up to 1400 W (8/20 µs).
- Is the ESDA13P70-1U1M ROHS compliant?
- What are the typical applications of the ESDA13P70-1U1M?
Typical applications include USB type-C Vbus, battery protection, power supply lines, hard disks, SSDs, portable multimedia devices, industrial applications, and medical equipment.
- What is the package type and size of the ESDA13P70-1U1M?
The ESDA13P70-1U1M is packaged in a 1.6 mm x 1.0 mm QFN-2L footprint.
- Does the ESDA13P70-1U1M comply with any specific standards?
- What is the dynamic resistance of the ESDA13P70-1U1M?
The dynamic resistance (Rd) is 0.09 Ω for an 8/20 µs waveform.
- What is the line capacitance of the ESDA13P70-1U1M?
The line capacitance (CI/O-GND) is 390 pF.
