Overview
The MBRD660CT Schottky Rectifier, produced by SMC Diode Solutions, is designed for high-performance applications in switching power supplies, inverters, and as free-wheeling diodes. This device is characterized by its extremely fast switching capabilities and low forward voltage drop, making it ideal for efficient power management.
The rectifier features a center tap configuration and is encapsulated in high-purity, high-temperature epoxy, enhancing its mechanical strength and moisture resistance. It is also AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.
Key Specifications
| Parameter | Condition | Typical | Maximum | Units |
|---|---|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | - | - | 60 | V |
| Average Rectified Forward Current (IF(AV)) | TC = 146°C, In DC | - | 6 A (per device), 3 A (per leg) | A |
| Peak One Cycle Non-Repetitive Surge Current (IFSM) | 8.3 ms, half Sine pulse | - | 75 A | A |
| Forward Voltage Drop (VF1) | @ 3 A, Pulse, TJ = 25°C | 0.55 | 0.71 | V |
| Forward Voltage Drop (VF2) | @ 3 A, Pulse, TJ = 125°C | 0.49 | 0.65 | V |
| Reverse Current (IR1) | @VR = rated VR, TJ = 25°C | 0.01 | 0.1 | mA |
| Reverse Current (IR2) | @VR = rated VR, TJ = 125°C | 5 | 15 | mA |
| Junction Capacitance (CT) | @VR = 5V, TC = 25°C, fSIG = 1MHz | 121 | 200 | pF |
| Junction Temperature (TJ) | - | - | -55 to +150 | °C |
| Storage Temperature (Tstg) | - | - | -55 to +150 | °C |
| Typical Thermal Resistance Junction to Case (RθJC) | - | - | 2 | °C/W |
| Approximate Weight | - | - | 0.39 g | g |
| Case Style | - | - | DPAK | - |
Key Features
- Extremely fast switching and low forward voltage drop
- Center tap configuration
- High-purity, high-temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- High frequency operation
- Guard ring for enhanced ruggedness and long-term reliability
- AEC-Q101 qualified and Pb-free
- All SMC parts are traceable to the wafer lot
- Terminals finish: Tin Lead-free plated
Applications
- Switching power supplies
- Converters
- Free-Wheeling diodes
- Reverse battery protection
- Battery charging
Q & A
- What is the peak repetitive reverse voltage of the MBRD660CT?
The peak repetitive reverse voltage (VRRM) of the MBRD660CT is 60 V.
- What is the average rectified forward current of the MBRD660CT?
The average rectified forward current (IF(AV)) is 6 A for the device and 3 A per leg.
- What is the forward voltage drop at 3 A and 25°C?
The forward voltage drop (VF1) at 3 A and 25°C is typically 0.55 V and maximum 0.71 V.
- What is the junction temperature range of the MBRD660CT?
The junction temperature (TJ) range is -55 to +150°C.
- Is the MBRD660CT AEC-Q101 qualified?
- What is the typical thermal resistance junction to case?
The typical thermal resistance junction to case (RθJC) is 2°C/W.
- What are the common applications of the MBRD660CT?
- What is the case style of the MBRD660CT?
The case style of the MBRD660CT is DPAK.
- Is the MBRD660CT Pb-free?
- What is the weight of the MBRD660CT?
The approximate weight of the MBRD660CT is 0.39 grams.
