Overview
The BAS40-05HYT116 is a Schottky Barrier Diode produced by ROHM Semiconductor. This diode is designed for low forward voltage drop and fast switching capabilities, making it suitable for various applications requiring high efficiency and reliability. It is packaged in the SOT-23 format, which is compact and ideal for space-constrained designs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V |
| Forward Continuous Current | IF | 200 | mA |
| Forward Surge Current (t < 1.0s) | IFSM | 600 | mA |
| Forward Voltage (IF = 1 mA) | VF | 0.38 | V |
| Reverse Leakage Current (VR = 30 V) | IR | 20 - 200 | nA |
| Operating Temperature Range | TJ | -55 to +125 | °C |
| Storage Temperature Range | TSTG | -65 to +150 | °C |
| Thermal Resistance, Junction to Ambient Air | RθJA | 357 | °C/W |
| Package | SOT-23 |
Key Features
- Low Forward Voltage Drop: The BAS40-05HYT116 features a low forward voltage drop, which enhances efficiency in power management applications.
- Fast Switching: This diode is designed for fast switching, making it suitable for high-frequency applications.
- PN Junction Guard Ring for Transient and ESD Protection: It includes a PN junction guard ring to protect against transient and electrostatic discharge (ESD) events.
- Totally Lead-Free & Fully RoHS Compliant: The diode is lead-free and fully compliant with RoHS regulations, ensuring environmental sustainability.
- Compact SOT-23 Package: The SOT-23 package is compact and ideal for space-constrained designs.
Applications
- Automotive Systems: Suitable for use in automotive systems due to its high reliability and robustness against thermal and ESD stresses.
- Power Supply Devices: Ideal for power supply devices where low forward voltage drop and fast switching are critical.
- High-Frequency Circuits: Used in high-frequency circuits where fast switching times are essential.
- General Electronic Devices: Can be used in various general electronic devices requiring efficient and reliable diode performance.
Q & A
- What is the peak repetitive reverse voltage of the BAS40-05HYT116?
The peak repetitive reverse voltage (VRRM) is 40 V.
- What is the forward continuous current rating of this diode?
The forward continuous current (IF) is 200 mA.
- What is the forward surge current rating for a duration less than 1 second?
The forward surge current (IFSM) for t < 1.0s is 600 mA.
- What is the typical forward voltage drop at 1 mA current?
The typical forward voltage (VF) at 1 mA is 0.38 V.
- Is the BAS40-05HYT116 RoHS compliant?
- What is the operating temperature range of this diode?
The operating temperature range is -55°C to +125°C.
- What is the storage temperature range for this diode?
The storage temperature range is -65°C to +150°C.
- What package type is used for the BAS40-05HYT116?
The diode is packaged in the SOT-23 format.
- Does the BAS40-05HYT116 have any protection features against transient and ESD events?
- What are some common applications for the BAS40-05HYT116?
