Overview
The LM5112MY, produced by Texas Instruments (previously National Semiconductor), is a high-performance MOSFET gate driver designed for high-frequency applications. It is available in a compact 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package, which enhances power dissipation. This device is particularly suited for driving MOSFETs in various power management and control systems due to its high peak gate drive current and fast propagation times.
Key Specifications
| Parameter | Min | Typical | Max | Unit |
|---|---|---|---|---|
| Operating Voltage (VCC - IN_REF and VCC - VEE) | 3.5 | - | 14 | V |
| Undervoltage Lockout (UVLO) Rising | 2.4 | 3 | 3.5 | V |
| UVLO Hysteresis | - | 230 | - | mV |
| Supply Current (ICC) | - | 1 | 2 | mA |
| Logic High Input Voltage (VIH) | - | 2.3 | - | V |
| Logic Low Input Voltage (VIL) | - | 0.8 | - | V |
| High Threshold Voltage (VthH) | 1.3 | 1.75 | 2.3 | V |
| Low Threshold Voltage (VthL) | 0.8 | 1.35 | 2 | V |
| Input Hysteresis | - | 400 | - | mV |
| Peak Output Current (Source, Sink) | - | 3 A, 7 A | - | A |
| Rise/Fall Time (Typical) | - | 14 ns, 12 ns | - | ns |
| Operating Temperature Range | -40 | - | 125 | °C |
Key Features
- AEC-Q100 Grade 1 Qualified for automotive applications and manufactured on an automotive grade flow.
- Compound CMOS and bipolar outputs reduce output current variation with voltage and temperature.
- High peak gate drive current: 7-A sink and 3-A source current.
- Fast propagation times: 25 ns (typical) and fast rise and fall times: 14 ns or 12 ns with a 2-nF load.
- Inverting and non-inverting inputs provide either configuration with a single device.
- Supply rail undervoltage lockout protection to prevent damage to the MOSFET.
- Dedicated input ground (IN_REF) for split supply or single supply operation.
- Power-enhanced 6-pin WSON package (3 mm × 3 mm) or thermally enhanced MSOP-PowerPAD package.
- Output swings from VCC to VEE, which are negative relative to input ground.
Applications
- DC to DC switch-mode power supplies.
- AC to DC switch-mode power supplies.
- Solar microinverters.
- Solenoid and motor drives.
Q & A
- What is the LM5112MY used for?
The LM5112MY is a MOSFET gate driver used to drive MOSFETs in high-frequency applications such as DC to DC converters, AC to DC converters, solar microinverters, and solenoid/motor drives.
- What are the key features of the LM5112MY?
Key features include high peak gate drive current, fast propagation times, inverting and non-inverting inputs, undervoltage lockout protection, and dedicated input ground for split or single supply operation.
- What are the operating voltage and temperature ranges of the LM5112MY?
The operating voltage range is 3.5 V to 14 V, and the operating temperature range is -40°C to 125°C.
- What is the peak output current capability of the LM5112MY?
The device can source 3 A and sink 7 A peak currents.
- Is the LM5112MY qualified for automotive applications?
Yes, the LM5112MY is AEC-Q100 Grade 1 Qualified for automotive applications.
- What types of packages are available for the LM5112MY?
The device is available in a 6-pin WSON package and an 8-pin exposed-pad MSOP package.
- What is the purpose of the undervoltage lockout (UVLO) in the LM5112MY?
The UVLO protects the MOSFET from damage due to insufficient gate turn-on voltage.
- Can the LM5112MY operate in both single and split supply configurations?
Yes, the device can operate in both single and split supply configurations using the dedicated input ground (IN_REF) pin.
- What is the typical rise and fall time of the LM5112MY with a 2-nF load?
The typical rise and fall times are 14 ns and 12 ns, respectively.
- How does the LM5112MY reduce output current variation?
The device uses a compound output driver stage that includes both MOS and bipolar transistors, reducing output current variation with voltage and temperature.
