LM5109BMA/NOP
  • Share:

National Semiconductor LM5109BMA/NOP

Manufacturer No:
LM5109BMA/NOP
Manufacturer:
National Semiconductor
Package:
Bulk
Description:
HALF BRIDGE BASED MOSFET DRIVER,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LM5109BMA/NOP is a high-voltage, 1-A peak half-bridge gate driver designed and manufactured by Texas Instruments, although it may be listed under National Semiconductor in some catalogs due to historical reasons. This device is optimized for driving both the high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. It features robust level shift technology, high-speed operation, and low power consumption, making it suitable for a variety of power management applications.

Key Specifications

SpecificationValueUnit
Peak Output Current1.0 A (Sink and Source)A
Bootstrap Supply VoltageUp to 108 V DCV
Propagation Times30 ns (Typical)ns
Rise and Fall Times15 ns (Typical for 1000-pF Load)ns
Propagation Delay Matching2 ns (Typical)ns
Undervoltage Lockout (UVLO)Typically 6.7 VV
Operating Temperature Range-40°C to 125°C°C
Package Type8-Pin SOIC and 8-Pin WSON
Input CompatibilityTTL and CMOS

Key Features

  • High-Side and Low-Side Driver: Drives both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations.
  • High Peak Output Current: 1-A peak output current for both sink and source.
  • TTL and CMOS Compatibility: Inputs are compatible with independent TTL and CMOS thresholds.
  • Bootstrap Supply Voltage: Supports bootstrap supply voltage up to 108 V DC.
  • Fast Propagation Times: Typical propagation times of 30 ns.
  • Low Power Consumption: Designed for low power consumption.
  • Robust Level Shift Technology: Provides clean level transitions from control input logic to the high-side gate driver.
  • Undervoltage Lockout (UVLO): UVLO protection on both low-side and high-side power rails.

Applications

  • Synchronous Buck Converters: Ideal for driving MOSFETs in synchronous buck configurations.
  • Half-Bridge and Full-Bridge Configurations: Suitable for half-bridge and full-bridge power stages.
  • Power Management Systems: Used in various power management systems requiring high-speed and high-voltage gate driving.
  • Industrial and Automotive Systems: Applicable in industrial and automotive applications where robust and reliable gate driving is necessary.

Q & A

  1. What is the peak output current of the LM5109BMA/NOP?

    The peak output current is 1.0 A for both sink and source.

  2. What is the maximum bootstrap supply voltage for the LM5109BMA/NOP?

    The maximum bootstrap supply voltage is up to 108 V DC.

  3. What are the typical propagation times for the LM5109BMA/NOP?

    The typical propagation times are 30 ns.

  4. Is the LM5109BMA/NOP compatible with TTL and CMOS inputs?

    Yes, the inputs are compatible with both TTL and CMOS thresholds.

  5. What is the operating temperature range for the LM5109BMA/NOP?

    The operating temperature range is -40°C to 125°C.

  6. What types of packages are available for the LM5109BMA/NOP?

    The device is available in 8-pin SOIC and 8-pin WSON packages.

  7. Does the LM5109BMA/NOP have undervoltage lockout (UVLO) protection?

    Yes, it has UVLO protection on both the low-side and high-side power rails.

  8. What are the recommended bypass capacitors for the LM5109BMA/NOP?

    Texas Instruments recommends using a 100-nF ceramic surface-mount capacitor for high-frequency filtering and another surface-mount capacitor (220-nF to 10-µF) for IC bias requirements, both placed close to the VDD and GND pins.

  9. How should the bootstrap capacitor be selected and connected?

    The bootstrap capacitor should be a ceramic type with X7R dielectric, and it must be charged through an external high-voltage diode. The capacitor should be placed as close to the IC as possible.

  10. What are the key considerations for selecting external gate driver resistors?

    The external gate driver resistors should be selected to reduce ringing caused by parasitic inductances and capacitances and to limit the current coming out of the gate driver. Values typically range between 2 Ω and 10 Ω depending on the diode selection.

Product Attributes

Type:- 
Applications:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
245

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

TDA18273HN/C1/S3518
TDA18273HN/C1/S3518
NXP USA Inc.
TDA18273 - IC SILICON TUNER HYBR
AD5522JSVUZ-RL
AD5522JSVUZ-RL
Analog Devices Inc.
IC PPMU 80TQFP
BAS321/S501115
BAS321/S501115
Nexperia USA Inc.
NOW NEXPERIA BAS321 - RECTIFIER
BZX84-C20/DG/B4215
BZX84-C20/DG/B4215
Nexperia USA Inc.
NOW NEXPERIA BZX84-C20 - ZENER D
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN
BC817K-25,235
BC817K-25,235
Nexperia USA Inc.
BC817K-25 - 45 V, 500 MA NPN GEN
74LVC1G17GV-Q100,125
74LVC1G17GV-Q100,125
Nexperia USA Inc.
NOW NEXPERIA 74LVC1G17GV-Q100 -
CD74AC138MS2074
CD74AC138MS2074
Harris Corporation
3 TO 8 LINE DECODER/DEMULTIPLEXE
PCT2075DP
PCT2075DP
NXP USA Inc.
I2C-BUS FM PLUS, 1 DEGREE CNETIG
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C
74LVC1G14GS132
74LVC1G14GS132
NXP USA Inc.
NOW NEXPERIA 74LVC1G14GS INVERTE
HEF4046BT653
HEF4046BT653
NXP USA Inc.
NOW NEXPERIA HEF4046BT - PHASE L

Related Product By Brand

ADC0832BIWM
ADC0832BIWM
National Semiconductor
SAR ADC, 8-BIT, SERIAL ACCESS
ADC11DL066CIVS
ADC11DL066CIVS
National Semiconductor
ADC, PROPRIETARY METHOD, 11 BIT,
ADC10464CIWMX/NOPB
ADC10464CIWMX/NOPB
National Semiconductor
IC ADC 10BIT FLASH 28SOIC
ADC0819CCV
ADC0819CCV
National Semiconductor
IC ADC 8BIT 28PLCC
ADC12130CIWM
ADC12130CIWM
National Semiconductor
IC ADC 12BIT SAR 16SOIC
ADC12L063CIVY
ADC12L063CIVY
National Semiconductor
ADC, PROPRIETARY METHOD, 12-BIT,
DS14C232CN/NOPB
DS14C232CN/NOPB
National Semiconductor
IC TRANSCEIVER FULL 2/2 16DIP
TL082CMX
TL082CMX
National Semiconductor
IC OPAMP JFET 2 CIRCUIT 8SOIC
LF444ACN
LF444ACN
National Semiconductor
IC OPAMP JFET 4 CIRCUIT 14DIP
LMV7239M7X/NOPB
LMV7239M7X/NOPB
National Semiconductor
LMV7239 HIGH SPEED, LOW VOLTAGE
LM5112MY
LM5112MY
National Semiconductor
BUFFER/INVERTER BASED MOSFET DRI
LM5009MMX
LM5009MMX
National Semiconductor
SWITCHING REG, VOLTAGE-MODE, 0.3