Overview
The BC847BPN_R1_00001 is a dual NPN/PNP general-purpose transistor pair manufactured by Panjit International Inc. This device is housed in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for applications where board space is limited. The transistor is designed for general-purpose amplifier applications and is particularly suited for portable devices such as hand-held computers and PDAs.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Base Voltage | Vcbo | 50 | V |
| Collector-Emitter Voltage | Vceo | 45 | V |
| Emitter-Base Voltage | Vebo | 5 | V |
| Maximum Collector Current | Ic max | 100 mA | |
| Maximum Power Dissipation | Pd | 200 mW | |
| Operating Junction Temperature | Tj | -55°C to +150°C | |
| Transition Frequency | ft | 100 MHz | |
| DC Current Gain (hFE) Min | hFE min | 200 | |
| Collector-Emitter Saturation Voltage | Vce(sat) | 400 mV @ 5mA, 100mA | |
| Package/Case | SOT363-6 |
Key Features
- Low collector capacitance
- Low collector-emitter saturation voltage
- Closely matched current gain (hFE)
- Electrically-isolated complimentary NPN and PNP transistor pairs
- No mutual interference between the transistors
- Ideal for portable applications where board space is at a premium
- Lead-free in compliance with EU RoHS
Applications
- General-purpose amplifier applications
- Hand-held computers and PDAs
- Portable electronic devices where space is limited
- Various other applications requiring dual NPN/PNP transistors
Q & A
- What is the package type of the BC847BPN_R1_00001 transistor?
The BC847BPN_R1_00001 is housed in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
- What are the maximum collector-emitter and collector-base voltages for the BC847BPN_R1_00001?
The maximum collector-emitter voltage (Vceo) is 45 V, and the maximum collector-base voltage (Vcbo) is 50 V.
- What is the maximum collector current for the BC847BPN_R1_00001?
The maximum collector current (Ic max) is 100 mA.
- What is the operating junction temperature range for the BC847BPN_R1_00001?
The operating junction temperature range is from -55°C to +150°C.
- What is the transition frequency (ft) of the BC847BPN_R1_00001?
The transition frequency (ft) is 100 MHz.
- What is the minimum DC current gain (hFE) for the BC847BPN_R1_00001?
The minimum DC current gain (hFE) is 200.
- Is the BC847BPN_R1_00001 lead-free and RoHS compliant?
Yes, the BC847BPN_R1_00001 is lead-free and compliant with EU RoHS.
- What are some typical applications of the BC847BPN_R1_00001?
Typical applications include general-purpose amplifier applications, hand-held computers, PDAs, and other portable electronic devices.
- Does the BC847BPN_R1_00001 have electrically-isolated transistor pairs?
Yes, the BC847BPN_R1_00001 contains two electrically-isolated complimentary NPN and PNP transistor pairs.
- What is the maximum power dissipation for the BC847BPN_R1_00001?
The maximum power dissipation (Pd) is 200 mW.
