Overview
The NRVTS245ESFT3G is a Very Low Forward Voltage Trench-based Schottky Rectifier produced by onsemi. This device utilizes advanced fine lithography trench-based Schottky technology, which enables a very low forward voltage drop without the high reverse leakage typically associated with planar Schottky rectifiers. This makes it highly efficient and suitable for various high-performance applications. The rectifier is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent requirements.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 45 | V |
| Average Rectified Forward Current (TL = 148°C) | IO | 2.0 | A |
| Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 143°C) | IFRM | 4.0 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 50 | A |
| Storage and Operating Junction Temperature Range | Tstg, TJ | −65 to +175 | °C |
| Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 25°C) | VF | 0.65 | V |
| Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) | IR | 75 μA | A |
| Thermal Resistance, Junction-to-Lead | RθJL | 23 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 85 °C/W | °C/W |
Key Features
- Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
- Fast switching with exceptional temperature stability.
- Low power loss and lower operating temperature.
- Higher efficiency for achieving regulatory compliance.
- Low thermal resistance.
- High surge capability.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and halide-free devices.
Applications
- Switching power supplies, including compact adapters and flat panel displays.
- High frequency and DC-DC converters.
- Freewheeling and OR-ing diodes.
- Reverse battery protection.
- Instrumentation.
- Automotive LED lighting.
Q & A
- What is the peak repetitive reverse voltage of the NRVTS245ESFT3G?
The peak repetitive reverse voltage (VRRM) is 45 V.
- What is the average rectified forward current of the NRVTS245ESFT3G at 148°C?
The average rectified forward current (IO) is 2.0 A at 148°C.
- What is the maximum instantaneous forward voltage of the NRVTS245ESFT3G at 2.0 A and 25°C?
The maximum instantaneous forward voltage (VF) is 0.65 V at 2.0 A and 25°C.
- Is the NRVTS245ESFT3G AEC-Q101 qualified?
- What is the thermal resistance, junction-to-ambient, of the NRVTS245ESFT3G?
The thermal resistance, junction-to-ambient (RθJA), is 85 °C/W.
- What are the typical applications of the NRVTS245ESFT3G?
Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and automotive LED lighting.
- Is the NRVTS245ESFT3G Pb-free and halide-free?
- What is the storage and operating junction temperature range of the NRVTS245ESFT3G?
The storage and operating junction temperature range is −65 to +175 °C.
- What is the non-repetitive peak surge current of the NRVTS245ESFT3G?
The non-repetitive peak surge current (IFSM) is 50 A.
- What package type is the NRVTS245ESFT3G available in?
The NRVTS245ESFT3G is available in the SOD-123FL package.
