Overview
The NCV8402ASTT3G is a three-terminal protected Low-Side Smart Discrete device manufactured by onsemi. This device is designed to provide robust protection and control in harsh automotive and industrial environments. It features advanced protection mechanisms including overcurrent, overtemperature, ESD, and integrated Drain-to-Gate clamping for overvoltage protection. The NCV8402ASTT3G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage Internally Clamped | VDSS | 42 | V |
Drain-to-Gate Voltage Internally Clamped | VDGR | 42 | V |
Gate-to-Source Voltage | VGS | ±14 | V |
Continuous Drain Current (SOT-223 Version) | ID | Internally Limited | A |
Total Power Dissipation (SOT-223 Version at TA = 25°C) | PD | 1.1 | W |
Maximum Continuous Drain Current (SOT-223 Version at TA = 25°C) | ID | 1.54 | A |
Thermal Resistance (SOT223 Junction-to-Ambient Steady State) | RJA | 114 | °C/W |
Single Pulse Drain-to-Source Avalanche Energy | EAS | — | mJ |
Gate Threshold Voltage | VGS(th) | 1.3 - 2.2 | V |
Static Drain-to-Source On-Resistance | RDS(on) | 165 - 200 mΩ (at VGS = 10 V, ID = 1.7 A, TJ = 25°C) | mΩ |
Key Features
- Short-Circuit Protection
- Thermal Shutdown with Automatic Restart
- Overvoltage Protection
- Integrated Clamp for Inductive Switching
- ESD Protection
- Analog Drive Capability (Logic Level Input)
- dV/dt Robustness
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
The NCV8402ASTT3G is suitable for switching a variety of resistive, inductive, and capacitive loads. It is particularly useful in harsh automotive environments and other applications requiring robust protection and control.
Q & A
- What is the NCV8402ASTT3G?
The NCV8402ASTT3G is a three-terminal protected Low-Side Smart Discrete device manufactured by onsemi.
- What are the key protection features of the NCV8402ASTT3G?
The device features overcurrent, overtemperature, ESD protection, and integrated Drain-to-Gate clamping for overvoltage protection.
- What is the maximum drain-to-source voltage for the NCV8402ASTT3G?
The maximum drain-to-source voltage is 42 V.
- What is the continuous drain current limit for the SOT-223 version?
The continuous drain current is internally limited, with a maximum of 1.54 A at TA = 25°C for the SOT-223 version.
- Is the NCV8402ASTT3G suitable for automotive applications?
- What is the thermal shutdown feature of the NCV8402ASTT3G?
The device features thermal shutdown with automatic restart.
- Is the NCV8402ASTT3G Pb-Free and RoHS compliant?
- What types of loads can the NCV8402ASTT3G switch?
The device can switch a variety of resistive, inductive, and capacitive loads.
- What is the gate threshold voltage range for the NCV8402ASTT3G?
The gate threshold voltage range is 1.3 to 2.2 V.
- What is the static drain-to-source on-resistance of the NCV8402ASTT3G?
The static drain-to-source on-resistance is 165 to 200 mΩ at VGS = 10 V, ID = 1.7 A, and TJ = 25°C.