MURD530T4G
  • Share:

onsemi MURD530T4G

Manufacturer No:
MURD530T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 300V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURD530T4G is a high-performance ultra-fast recovery rectifier diode manufactured by onsemi. This component is designed for use in switch-mode power supplies and other high-frequency applications where fast recovery times and low forward voltage drop are critical. The diode is packaged in a DPAK (TO-252) case, which provides excellent thermal management and ease of mounting on PCBs.

Key Specifications

ParameterValue
TypeUltra Fast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.05 V @ 5 A
Repetitive Peak Reverse Voltage (VRRM)300 V
Average Forward Current (IF(AV))5 A
Max Surge Current (I FSM)75 A
Recovery Time (trr)50 ns
PackageDPAK (TO-252)

Key Features

  • Ultra-fast recovery time of 50 ns, making it suitable for high-frequency applications.
  • Low forward voltage drop of 1.05 V at 5 A, reducing power losses.
  • High repetitive peak reverse voltage of 300 V, ensuring reliability in high-voltage applications.
  • Average forward current of 5 A, supporting a wide range of power requirements.
  • High surge current capability of 75 A, providing robustness against transient conditions.
  • ROHS compliant and packaged in a DPAK (TO-252) case for efficient thermal management.

Applications

The MURD530T4G is ideal for various applications including switch-mode power supplies, DC-DC converters, and other high-frequency power conversion systems. It is also suitable for use in motor control circuits, power factor correction circuits, and general-purpose rectification in high-power electronic systems.

Q & A

  1. What is the forward voltage drop of the MURD530T4G at 5 A?
    The forward voltage drop is 1.05 V at 5 A.
  2. What is the repetitive peak reverse voltage of the MURD530T4G?
    The repetitive peak reverse voltage is 300 V.
  3. What is the recovery time of the MURD530T4G?
    The recovery time is 50 ns.
  4. What is the maximum surge current the MURD530T4G can handle?
    The maximum surge current is 75 A.
  5. In what package is the MURD530T4G available?
    The MURD530T4G is available in a DPAK (TO-252) package.
  6. Is the MURD530T4G ROHS compliant?
    Yes, the MURD530T4G is ROHS compliant.
  7. What are some typical applications of the MURD530T4G?
    Typical applications include switch-mode power supplies, DC-DC converters, motor control circuits, and power factor correction circuits.
  8. What is the average forward current rating of the MURD530T4G?
    The average forward current rating is 5 A.
  9. Why is the MURD530T4G suitable for high-frequency applications?
    The MURD530T4G is suitable for high-frequency applications due to its ultra-fast recovery time of 50 ns.
  10. Where can I find detailed specifications for the MURD530T4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Farnell.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$1.72
462

Please send RFQ , we will respond immediately.

Similar Products

Part Number MURD530T4G MURD330T4G
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 300 V 300 V
Current - Average Rectified (Io) 5A 3A (DC)
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 5 A 1.15 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 300 V 5 µA @ 300 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP