MSRD620CTT4G
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onsemi MSRD620CTT4G

Manufacturer No:
MSRD620CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MSRD620CTT4G is a high-performance, ultrafast recovery power rectifier produced by onsemi. This device is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a robust set of characteristics that make it suitable for demanding applications in various industries.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM200V
Working Peak Reverse VoltageVRWM200V
DC Blocking VoltageVR200V
Average Rectified Forward Current (TC = 140°C)IF(AV)6.0A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 145°C)IF6.0A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz)IFSM50A
Operating Junction and Storage Temperature RangeTJ, Tstg-65 to +175°C
Maximum Instantaneous Forward Voltage Drop (iF = 6 Amps, TC = 25°C)vF0.96V
Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/μs, VR = 30 V, TJ = 25°C)trr35ns
Thermal Resistance, Junction-to-CaseRθJC9°C/W
Thermal Resistance, Junction-to-AmbientRθJA80°C/W

Key Features

  • Ultrafast 35 nanosecond recovery time, ensuring minimal switching losses and high efficiency.
  • Low forward voltage drop, reducing power dissipation and heat generation.
  • Low leakage current, enhancing overall system reliability.
  • ESD rating: Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V), providing robust protection against electrostatic discharge.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The MSRD620CTT4G is ideal for use in various applications, including:

  • Switching power supplies: Due to its ultrafast recovery time and low forward voltage drop, it is well-suited for high-frequency switching applications.
  • Inverters: Its high current handling and low switching losses make it a good choice for inverter circuits.
  • Free-wheeling diodes: The device’s fast recovery time and low leakage current make it suitable for free-wheeling diode applications in power circuits.
  • Automotive and industrial systems: With its AEC-Q101 qualification and PPAP capability, it is reliable for use in automotive and other demanding industrial environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MSRD620CTT4G?
    The peak repetitive reverse voltage is 200 V.
  2. What is the average rectified forward current rating at 140°C?
    The average rectified forward current is 6.0 A.
  3. What is the maximum non-repetitive peak surge current?
    The maximum non-repetitive peak surge current is 50 A.
  4. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -65 to +175°C.
  5. What is the maximum instantaneous forward voltage drop at 6 A and 25°C?
    The maximum instantaneous forward voltage drop is 0.96 V.
  6. What is the reverse recovery time at 1 A and 25°C?
    The reverse recovery time is 35 ns.
  7. Is the MSRD620CTT4G RoHS compliant?
    Yes, the MSRD620CTT4G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  8. What are the typical applications of the MSRD620CTT4G?
    Typical applications include switching power supplies, inverters, and free-wheeling diodes in various industries.
  9. Is the MSRD620CTT4G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  10. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case is 9°C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MSRD620CTT4G MSRD620CTT4RG
Manufacturer onsemi onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 3 A 1.15 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 1 µA @ 200 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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