MSRD620CTT4G
  • Share:

onsemi MSRD620CTT4G

Manufacturer No:
MSRD620CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MSRD620CTT4G is a high-performance, ultrafast recovery power rectifier produced by onsemi. This device is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a robust set of characteristics that make it suitable for demanding applications in various industries.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM200V
Working Peak Reverse VoltageVRWM200V
DC Blocking VoltageVR200V
Average Rectified Forward Current (TC = 140°C)IF(AV)6.0A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 145°C)IF6.0A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz)IFSM50A
Operating Junction and Storage Temperature RangeTJ, Tstg-65 to +175°C
Maximum Instantaneous Forward Voltage Drop (iF = 6 Amps, TC = 25°C)vF0.96V
Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/μs, VR = 30 V, TJ = 25°C)trr35ns
Thermal Resistance, Junction-to-CaseRθJC9°C/W
Thermal Resistance, Junction-to-AmbientRθJA80°C/W

Key Features

  • Ultrafast 35 nanosecond recovery time, ensuring minimal switching losses and high efficiency.
  • Low forward voltage drop, reducing power dissipation and heat generation.
  • Low leakage current, enhancing overall system reliability.
  • ESD rating: Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V), providing robust protection against electrostatic discharge.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The MSRD620CTT4G is ideal for use in various applications, including:

  • Switching power supplies: Due to its ultrafast recovery time and low forward voltage drop, it is well-suited for high-frequency switching applications.
  • Inverters: Its high current handling and low switching losses make it a good choice for inverter circuits.
  • Free-wheeling diodes: The device’s fast recovery time and low leakage current make it suitable for free-wheeling diode applications in power circuits.
  • Automotive and industrial systems: With its AEC-Q101 qualification and PPAP capability, it is reliable for use in automotive and other demanding industrial environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MSRD620CTT4G?
    The peak repetitive reverse voltage is 200 V.
  2. What is the average rectified forward current rating at 140°C?
    The average rectified forward current is 6.0 A.
  3. What is the maximum non-repetitive peak surge current?
    The maximum non-repetitive peak surge current is 50 A.
  4. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -65 to +175°C.
  5. What is the maximum instantaneous forward voltage drop at 6 A and 25°C?
    The maximum instantaneous forward voltage drop is 0.96 V.
  6. What is the reverse recovery time at 1 A and 25°C?
    The reverse recovery time is 35 ns.
  7. Is the MSRD620CTT4G RoHS compliant?
    Yes, the MSRD620CTT4G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  8. What are the typical applications of the MSRD620CTT4G?
    Typical applications include switching power supplies, inverters, and free-wheeling diodes in various industries.
  9. Is the MSRD620CTT4G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  10. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case is 9°C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$1.26
68

Please send RFQ , we will respond immediately.

Same Series
NRVSRD620VCTT4G
NRVSRD620VCTT4G
DIODE ARRAY GP 200V 3A DPAK
MSRD620CTG
MSRD620CTG
DIODE ARRAY GP 200V 3A DPAK
MSRD620CT
MSRD620CT
DIODE ARRAY GP 200V 3A DPAK
SSRD8620CTT4G
SSRD8620CTT4G
DIODE ARRAY GP 200V 3A DPAK

Similar Products

Part Number MSRD620CTT4G MSRD620CTT4RG
Manufacturer onsemi onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 3 A 1.15 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 1 µA @ 200 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

Related Product By Categories

BAW56W-7-F
BAW56W-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT323
BAV170_R1_00001
BAV170_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
STPS41L60CG-TR
STPS41L60CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V D2PAK
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
SB05W05C-TB-E
SB05W05C-TB-E
onsemi
DIODE ARRAY SCHOTTKY 50V 3CP
BAS40DW-06-7-F
BAS40DW-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
MBRD660CTT4G/BKN
MBRD660CTT4G/BKN
onsemi
DEVELOPMENT KITS/ACCESSORIES
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB

Related Product By Brand

MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3