MOC8204SR2M
  • Share:

onsemi MOC8204SR2M

Manufacturer No:
MOC8204SR2M
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
OPTOISO 4.17KV TRANS W/BASE 6SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MOC8204SR2M is a high-voltage phototransistor optocoupler produced by onsemi. This device is part of the MOC8204 series and is designed to provide high voltage isolation and reliable performance in various applications. It features a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor, packaged in a standard 6-pin dual-in-line (DIP) or surface mount technology (SMT) package.

Key Specifications

ParameterValueUnit
Maximum Working Insulation Voltage (VIORM)850Vpeak
Highest Allowable Over-Voltage (VIOTM)6000Vpeak
External Creepage≥ 7 mm
External Clearance≥ 7 mm
Collector to Emitter Voltage (BVCEO)400V
Input-Output Isolation Voltage4170VACRMS (for 1 minute)
Storage Temperature-40 to +125°C
Operating Temperature-40 to +100°C
Total Device Power Dissipation @ TA = 25°C420mW
Emitter Forward DC Current80mA

Key Features

  • High voltage capability: BVCEO = 400 V for MOC8204M.
  • Safety and regulatory approvals: UL1577, DIN-EN/IEC60747-5-5.
  • High input-output isolation voltage: 4170 VACRMS for 1 minute.
  • Wide operating temperature range: -40°C to +100°C.
  • Low saturation voltage: VCE(SAT) = 0.1 to 0.4 V.

Applications

  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
  • Appliance sensor systems
  • Industrial controls

Q & A

  1. What is the maximum working insulation voltage of the MOC8204SR2M? The maximum working insulation voltage is 850 Vpeak.
  2. What is the highest allowable over-voltage for the MOC8204SR2M? The highest allowable over-voltage is 6000 Vpeak.
  3. What is the collector to emitter voltage (BVCEO) for the MOC8204SR2M? The BVCEO is 400 V.
  4. What are the safety and regulatory approvals for the MOC8204SR2M? The device has approvals such as UL1577 and DIN-EN/IEC60747-5-5.
  5. What is the input-output isolation voltage for the MOC8204SR2M? The input-output isolation voltage is 4170 VACRMS for 1 minute.
  6. What is the operating temperature range for the MOC8204SR2M? The operating temperature range is -40°C to +100°C.
  7. What is the total device power dissipation at TA = 25°C? The total device power dissipation is 420 mW.
  8. What is the emitter forward DC current for the MOC8204SR2M? The emitter forward DC current is 80 mA.
  9. In what types of packages is the MOC8204SR2M available? The device is available in both DIP and SMT packages.
  10. What are some common applications for the MOC8204SR2M? Common applications include power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls.

Product Attributes

Number of Channels:1
Voltage - Isolation:4170Vrms
Current Transfer Ratio (Min):20% @ 10mA
Current Transfer Ratio (Max):- 
Turn On / Turn Off Time (Typ):5µs, 5µs
Rise / Fall Time (Typ):- 
Input Type:DC
Output Type:Transistor with Base
Voltage - Output (Max):400V
Current - Output / Channel:100mA
Voltage - Forward (Vf) (Typ):1.15V
Current - DC Forward (If) (Max):80 mA
Vce Saturation (Max):400mV
Operating Temperature:-40°C ~ 100°C
Mounting Type:Surface Mount
Package / Case:6-SMD, Gull Wing
Supplier Device Package:6-SMD
0 Remaining View Similar

In Stock

$1.72
282

Please send RFQ , we will respond immediately.

Same Series
MOC8204SM
MOC8204SM
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D2VM
H11D2VM
TRANSISTOR OUTPUT OPTOCOUPLER
H11D2SR2VM
H11D2SR2VM
TRANSISTOR OUTPUT OPTOCOUPLER
H11D1SR2VM
H11D1SR2VM
OPTOISO 4.17KV TRANS W/BASE 6SMD
4N38TVM
4N38TVM
HIGH VOLTAGE PHOTOTRANSISTOR OUT
H11D3SM
H11D3SM
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D1VM
H11D1VM
OPTOISO 4.17KV TRANS W/BASE 6DIP
H11D1SR2M
H11D1SR2M
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D3SR2M
H11D3SR2M
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D1SM
H11D1SM
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D1M
H11D1M
OPTOISO 4.17KV TRANS W/BASE 6DIP
MOC8204M
MOC8204M
OPTOISO 4.17KV TRANS W/BASE 6DIP

Related Product By Categories

HCNR201-000E
HCNR201-000E
Broadcom Limited
OPTOISO 5KV LINEAR PHVOLT 8DIP
FODM217C
FODM217C
onsemi
4 PIN TRANSISTOR OUTPUT MFP
TLP185(Y-TPL,SE
TLP185(Y-TPL,SE
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
TLP185(YH-TPL,SE
TLP185(YH-TPL,SE
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
CNY17-2M-V
CNY17-2M-V
Everlight Electronics Co Ltd
OPTOISO 5KV TRANS W/BASE 6DIP
PS2801-1-F4-A
PS2801-1-F4-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PC81711NSZ
PC81711NSZ
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
PC817X1
PC817X1
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
TLP185(GB-TPR,E)
TLP185(GB-TPR,E)
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
TLP291(TP,E)
TLP291(TP,E)
Toshiba Semiconductor and Storage
OPTOISOLATOR 3.75KV TRANS 4-SO
TLP291(GR-TP,E)
TLP291(GR-TP,E)
Toshiba Semiconductor and Storage
OPTOISOLATOR 3.75KV TRANS 4-SO
TLP627-2(LF1,F)
TLP627-2(LF1,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT