MOC8204SR2M
  • Share:

onsemi MOC8204SR2M

Manufacturer No:
MOC8204SR2M
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
OPTOISO 4.17KV TRANS W/BASE 6SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MOC8204SR2M is a high-voltage phototransistor optocoupler produced by onsemi. This device is part of the MOC8204 series and is designed to provide high voltage isolation and reliable performance in various applications. It features a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor, packaged in a standard 6-pin dual-in-line (DIP) or surface mount technology (SMT) package.

Key Specifications

ParameterValueUnit
Maximum Working Insulation Voltage (VIORM)850Vpeak
Highest Allowable Over-Voltage (VIOTM)6000Vpeak
External Creepage≥ 7 mm
External Clearance≥ 7 mm
Collector to Emitter Voltage (BVCEO)400V
Input-Output Isolation Voltage4170VACRMS (for 1 minute)
Storage Temperature-40 to +125°C
Operating Temperature-40 to +100°C
Total Device Power Dissipation @ TA = 25°C420mW
Emitter Forward DC Current80mA

Key Features

  • High voltage capability: BVCEO = 400 V for MOC8204M.
  • Safety and regulatory approvals: UL1577, DIN-EN/IEC60747-5-5.
  • High input-output isolation voltage: 4170 VACRMS for 1 minute.
  • Wide operating temperature range: -40°C to +100°C.
  • Low saturation voltage: VCE(SAT) = 0.1 to 0.4 V.

Applications

  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
  • Appliance sensor systems
  • Industrial controls

Q & A

  1. What is the maximum working insulation voltage of the MOC8204SR2M? The maximum working insulation voltage is 850 Vpeak.
  2. What is the highest allowable over-voltage for the MOC8204SR2M? The highest allowable over-voltage is 6000 Vpeak.
  3. What is the collector to emitter voltage (BVCEO) for the MOC8204SR2M? The BVCEO is 400 V.
  4. What are the safety and regulatory approvals for the MOC8204SR2M? The device has approvals such as UL1577 and DIN-EN/IEC60747-5-5.
  5. What is the input-output isolation voltage for the MOC8204SR2M? The input-output isolation voltage is 4170 VACRMS for 1 minute.
  6. What is the operating temperature range for the MOC8204SR2M? The operating temperature range is -40°C to +100°C.
  7. What is the total device power dissipation at TA = 25°C? The total device power dissipation is 420 mW.
  8. What is the emitter forward DC current for the MOC8204SR2M? The emitter forward DC current is 80 mA.
  9. In what types of packages is the MOC8204SR2M available? The device is available in both DIP and SMT packages.
  10. What are some common applications for the MOC8204SR2M? Common applications include power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls.

Product Attributes

Number of Channels:1
Voltage - Isolation:4170Vrms
Current Transfer Ratio (Min):20% @ 10mA
Current Transfer Ratio (Max):- 
Turn On / Turn Off Time (Typ):5µs, 5µs
Rise / Fall Time (Typ):- 
Input Type:DC
Output Type:Transistor with Base
Voltage - Output (Max):400V
Current - Output / Channel:100mA
Voltage - Forward (Vf) (Typ):1.15V
Current - DC Forward (If) (Max):80 mA
Vce Saturation (Max):400mV
Operating Temperature:-40°C ~ 100°C
Mounting Type:Surface Mount
Package / Case:6-SMD, Gull Wing
Supplier Device Package:6-SMD
0 Remaining View Similar

In Stock

$1.72
282

Please send RFQ , we will respond immediately.

Same Series
MOC8204SM
MOC8204SM
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D3M
H11D3M
OPTOISO 4.17KV TRANS W/BASE 6DIP
H11D2VM
H11D2VM
TRANSISTOR OUTPUT OPTOCOUPLER
H11D2SR2VM
H11D2SR2VM
TRANSISTOR OUTPUT OPTOCOUPLER
H11D1SR2VM
H11D1SR2VM
OPTOISO 4.17KV TRANS W/BASE 6SMD
4N38TVM
4N38TVM
HIGH VOLTAGE PHOTOTRANSISTOR OUT
H11D3SM
H11D3SM
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D1SR2M
H11D1SR2M
OPTOISO 4.17KV TRANS W/BASE 6SMD
H11D1M
H11D1M
OPTOISO 4.17KV TRANS W/BASE 6DIP
H11D2SR2M
H11D2SR2M
TRANSISTOR OUTPUT OPTOCOUPLER
H11D1TM
H11D1TM
OPTOISO 4.17KV TRANS W/BASE 6DIP
H11D2M
H11D2M
OPTOISO 7.5KV TRANS W/BASE 6DIP

Related Product By Categories

MOCD217R2M
MOCD217R2M
onsemi
OPTOISO 2.5KV 2CH TRANS 8SOIC
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
TLP291-4(TP,E)
TLP291-4(TP,E)
Toshiba Semiconductor and Storage
OPTOISOLTR 2.5KV 4CH TRANS 16-SO
FOD817DSD
FOD817DSD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
TLP291(V4GRTP,SE
TLP291(V4GRTP,SE
Toshiba Semiconductor and Storage
TRANSISTOR OPTOCOUPLER; DC INPUT
TLP291(SE
TLP291(SE
Toshiba Semiconductor and Storage
X36 PB-F PHOTOCOUPLER SO4 BULK
CNY17-2M-V
CNY17-2M-V
Everlight Electronics Co Ltd
OPTOISO 5KV TRANS W/BASE 6DIP
FODM217CV
FODM217CV
onsemi
PHOTOTRANSISTOR OPTO
PC817X3
PC817X3
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
PC817XI2
PC817XI2
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4SMD
TLP627-4(LF1,F)
TLP627-4(LF1,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP627F-2(F)
TLP627F-2(F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220