MMSD103T1G
  • Share:

onsemi MMSD103T1G

Manufacturer No:
MMSD103T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMSD103T1G is a high voltage switching diode produced by onsemi, designed for high voltage and high speed switching applications. This device is housed in a SOD-123 surface mount package, making it suitable for a variety of electronic circuits that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
Package / CaseSOD-123
Peak Reverse Voltage (V_RRM)250 V
Maximum Forward Current (I_F)200 mA
Maximum Surge Current (I_FS)2 A
Reverse Recovery Time (t_rr)50 ns
Forward Voltage Drop (V_F) at 200 mA1.25 V

Key Features

  • High voltage capability with a peak reverse voltage of 250 V.
  • High speed switching with a reverse recovery time of 50 ns.
  • Low forward voltage drop of 1.25 V at 200 mA.
  • Surface mount SOD-123 package for easy integration into modern electronic designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MMSD103T1G is ideal for various high voltage and high speed switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Automotive electronics.
  • Industrial control systems.
  • Telecommunication devices.

Q & A

  1. What is the peak reverse voltage of the MMSD103T1G? The peak reverse voltage is 250 V.
  2. What is the maximum forward current of the MMSD103T1G? The maximum forward current is 200 mA.
  3. What is the reverse recovery time of the MMSD103T1G? The reverse recovery time is 50 ns.
  4. What package type does the MMSD103T1G use? The MMSD103T1G is housed in a SOD-123 surface mount package.
  5. Is the MMSD103T1G RoHS compliant? Yes, the MMSD103T1G is RoHS compliant.
  6. What is the maximum surge current of the MMSD103T1G? The maximum surge current is 2 A.
  7. What is the forward voltage drop at 200 mA for the MMSD103T1G? The forward voltage drop at 200 mA is 1.25 V.
  8. What are some typical applications of the MMSD103T1G? Typical applications include power supplies, audio and video equipment, automotive electronics, industrial control systems, and telecommunication devices.
  9. Why is the MMSD103T1G suitable for high speed switching applications? The MMSD103T1G is suitable due to its high voltage capability and fast reverse recovery time of 50 ns.
  10. Where can I find detailed specifications for the MMSD103T1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,718

Please send RFQ , we will respond immediately.

Same Series
MMSD103T1G
MMSD103T1G
DIODE GEN PURP 250V 200MA SOD123

Similar Products

Part Number MMSD103T1G MMSD103T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V 1 µA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5