MMSD103T1G
  • Share:

onsemi MMSD103T1G

Manufacturer No:
MMSD103T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMSD103T1G is a high voltage switching diode produced by onsemi, designed for high voltage and high speed switching applications. This device is housed in a SOD-123 surface mount package, making it suitable for a variety of electronic circuits that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
Package / CaseSOD-123
Peak Reverse Voltage (V_RRM)250 V
Maximum Forward Current (I_F)200 mA
Maximum Surge Current (I_FS)2 A
Reverse Recovery Time (t_rr)50 ns
Forward Voltage Drop (V_F) at 200 mA1.25 V

Key Features

  • High voltage capability with a peak reverse voltage of 250 V.
  • High speed switching with a reverse recovery time of 50 ns.
  • Low forward voltage drop of 1.25 V at 200 mA.
  • Surface mount SOD-123 package for easy integration into modern electronic designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MMSD103T1G is ideal for various high voltage and high speed switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Automotive electronics.
  • Industrial control systems.
  • Telecommunication devices.

Q & A

  1. What is the peak reverse voltage of the MMSD103T1G? The peak reverse voltage is 250 V.
  2. What is the maximum forward current of the MMSD103T1G? The maximum forward current is 200 mA.
  3. What is the reverse recovery time of the MMSD103T1G? The reverse recovery time is 50 ns.
  4. What package type does the MMSD103T1G use? The MMSD103T1G is housed in a SOD-123 surface mount package.
  5. Is the MMSD103T1G RoHS compliant? Yes, the MMSD103T1G is RoHS compliant.
  6. What is the maximum surge current of the MMSD103T1G? The maximum surge current is 2 A.
  7. What is the forward voltage drop at 200 mA for the MMSD103T1G? The forward voltage drop at 200 mA is 1.25 V.
  8. What are some typical applications of the MMSD103T1G? Typical applications include power supplies, audio and video equipment, automotive electronics, industrial control systems, and telecommunication devices.
  9. Why is the MMSD103T1G suitable for high speed switching applications? The MMSD103T1G is suitable due to its high voltage capability and fast reverse recovery time of 50 ns.
  10. Where can I find detailed specifications for the MMSD103T1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,718

Please send RFQ , we will respond immediately.

Same Series
SMMSD103T1G
SMMSD103T1G
DIODE GEN PURP 250V 200MA SOD123

Similar Products

Part Number MMSD103T1G MMSD103T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V 1 µA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3