MMSD103T1G
  • Share:

onsemi MMSD103T1G

Manufacturer No:
MMSD103T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMSD103T1G is a high voltage switching diode produced by onsemi, designed for high voltage and high speed switching applications. This device is housed in a SOD-123 surface mount package, making it suitable for a variety of electronic circuits that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
Package / CaseSOD-123
Peak Reverse Voltage (V_RRM)250 V
Maximum Forward Current (I_F)200 mA
Maximum Surge Current (I_FS)2 A
Reverse Recovery Time (t_rr)50 ns
Forward Voltage Drop (V_F) at 200 mA1.25 V

Key Features

  • High voltage capability with a peak reverse voltage of 250 V.
  • High speed switching with a reverse recovery time of 50 ns.
  • Low forward voltage drop of 1.25 V at 200 mA.
  • Surface mount SOD-123 package for easy integration into modern electronic designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MMSD103T1G is ideal for various high voltage and high speed switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Automotive electronics.
  • Industrial control systems.
  • Telecommunication devices.

Q & A

  1. What is the peak reverse voltage of the MMSD103T1G? The peak reverse voltage is 250 V.
  2. What is the maximum forward current of the MMSD103T1G? The maximum forward current is 200 mA.
  3. What is the reverse recovery time of the MMSD103T1G? The reverse recovery time is 50 ns.
  4. What package type does the MMSD103T1G use? The MMSD103T1G is housed in a SOD-123 surface mount package.
  5. Is the MMSD103T1G RoHS compliant? Yes, the MMSD103T1G is RoHS compliant.
  6. What is the maximum surge current of the MMSD103T1G? The maximum surge current is 2 A.
  7. What is the forward voltage drop at 200 mA for the MMSD103T1G? The forward voltage drop at 200 mA is 1.25 V.
  8. What are some typical applications of the MMSD103T1G? Typical applications include power supplies, audio and video equipment, automotive electronics, industrial control systems, and telecommunication devices.
  9. Why is the MMSD103T1G suitable for high speed switching applications? The MMSD103T1G is suitable due to its high voltage capability and fast reverse recovery time of 50 ns.
  10. Where can I find detailed specifications for the MMSD103T1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,718

Please send RFQ , we will respond immediately.

Same Series
MMSD103T1G
MMSD103T1G
DIODE GEN PURP 250V 200MA SOD123

Similar Products

Part Number MMSD103T1G MMSD103T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V 1 µA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP