MMSD103T1G
  • Share:

onsemi MMSD103T1G

Manufacturer No:
MMSD103T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMSD103T1G is a high voltage switching diode produced by onsemi, designed for high voltage and high speed switching applications. This device is housed in a SOD-123 surface mount package, making it suitable for a variety of electronic circuits that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
Package / CaseSOD-123
Peak Reverse Voltage (V_RRM)250 V
Maximum Forward Current (I_F)200 mA
Maximum Surge Current (I_FS)2 A
Reverse Recovery Time (t_rr)50 ns
Forward Voltage Drop (V_F) at 200 mA1.25 V

Key Features

  • High voltage capability with a peak reverse voltage of 250 V.
  • High speed switching with a reverse recovery time of 50 ns.
  • Low forward voltage drop of 1.25 V at 200 mA.
  • Surface mount SOD-123 package for easy integration into modern electronic designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MMSD103T1G is ideal for various high voltage and high speed switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Automotive electronics.
  • Industrial control systems.
  • Telecommunication devices.

Q & A

  1. What is the peak reverse voltage of the MMSD103T1G? The peak reverse voltage is 250 V.
  2. What is the maximum forward current of the MMSD103T1G? The maximum forward current is 200 mA.
  3. What is the reverse recovery time of the MMSD103T1G? The reverse recovery time is 50 ns.
  4. What package type does the MMSD103T1G use? The MMSD103T1G is housed in a SOD-123 surface mount package.
  5. Is the MMSD103T1G RoHS compliant? Yes, the MMSD103T1G is RoHS compliant.
  6. What is the maximum surge current of the MMSD103T1G? The maximum surge current is 2 A.
  7. What is the forward voltage drop at 200 mA for the MMSD103T1G? The forward voltage drop at 200 mA is 1.25 V.
  8. What are some typical applications of the MMSD103T1G? Typical applications include power supplies, audio and video equipment, automotive electronics, industrial control systems, and telecommunication devices.
  9. Why is the MMSD103T1G suitable for high speed switching applications? The MMSD103T1G is suitable due to its high voltage capability and fast reverse recovery time of 50 ns.
  10. Where can I find detailed specifications for the MMSD103T1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,718

Please send RFQ , we will respond immediately.

Same Series
MMSD103T1G
MMSD103T1G
DIODE GEN PURP 250V 200MA SOD123

Similar Products

Part Number MMSD103T1G MMSD103T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V 1 µA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP