BCP54_L99Z
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onsemi BCP54_L99Z

Manufacturer No:
BCP54_L99Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1.5A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54_L99Z, produced by onsemi, is an NPN general-purpose medium power transistor. This device is designed for use in medium power amplifiers and switching circuits, capable of handling collector currents up to 1.2 A. It is sourced from Process 38 and is suitable for a wide range of applications due to its versatile performance characteristics.

Key Specifications

ParameterValueUnits
Collector-Emitter Voltage (VCEO)45V
Collector-Base Voltage (VCBO)45V
Emitter-Base Voltage (VEBO)5.0V
Collector Current - Continuous (IC)1.5A
Operating and Storage Junction Temperature Range (TJ, Tstg)-55 to +150°C
Total Device Dissipation (PD)1.5 W (Derate above 25°C)W
Thermal Resistance, Junction to Ambient (RθJA)83.3 °C/W°C/W
DC Current Gain (hFE)25 to 250
Collector-Emitter Saturation Voltage (VCE(sat))0.5 VV
Base-Emitter On Voltage (VBE(on))1.0 VV

Key Features

  • NPN medium power transistor in a SOT-223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package.
  • High collector current capability up to 1.2 A.
  • High collector-emitter voltage rating of 45 V.
  • Low collector-emitter saturation voltage of 0.5 V.
  • Wide operating and storage junction temperature range from -55°C to +150°C.
  • High DC current gain (hFE) ranging from 25 to 250.

Applications

The BCP54_L99Z transistor is versatile and can be used in various applications, including:

  • General purpose medium power amplifiers.
  • Switching circuits.
  • Automotive and industrial electronics.
  • Power, computing, consumer, mobile, and wearable devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP54_L99Z transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current of the BCP54_L99Z transistor?
    The maximum collector current (IC) is 1.5 A.
  3. What is the package type of the BCP54_L99Z transistor?
    The transistor is packaged in a SOT-223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package.
  4. What is the operating junction temperature range of the BCP54_L99Z transistor?
    The operating and storage junction temperature range is from -55°C to +150°C.
  5. What is the typical collector-emitter saturation voltage of the BCP54_L99Z transistor?
    The typical collector-emitter saturation voltage (VCE(sat)) is 0.5 V.
  6. What is the DC current gain range of the BCP54_L99Z transistor?
    The DC current gain (hFE) ranges from 25 to 250.
  7. Is the BCP54_L99Z transistor RoHS compliant?
    Yes, the BCP54_L99Z transistor is RoHS compliant.
  8. What are some common applications of the BCP54_L99Z transistor?
    Common applications include general purpose medium power amplifiers, switching circuits, automotive and industrial electronics, and various consumer devices.
  9. What is the thermal resistance, junction to ambient, of the BCP54_L99Z transistor?
    The thermal resistance, junction to ambient (RθJA), is 83.3 °C/W.
  10. How do I obtain samples or purchase the BCP54_L99Z transistor?
    Samples and purchases can be made through onsemi's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-4
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BCP54_L99Z
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