PDTC114ET/YA215
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NXP USA Inc. PDTC114ET/YA215

Manufacturer No:
PDTC114ET/YA215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia, a company within the NXP group. This transistor is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited.

It is designed to simplify circuit design and reduce component count and pick-and-place costs. The PDTC114ET is a cost-effective alternative to the BC847 series in digital applications and is widely used in automotive and industrial segments.

Key Specifications

Parameter Typical Value Unit
Collector-Emitter Voltage (VCEO) 50 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEB0) 10 V
Collector Current (IC) 100 mA
Base Input Resistors (R1, R2) 10 kΩ, 10 kΩ
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) 150 °C
Ambient Temperature (Tamb) -65 to 150 °C
Package Type SOT23 -

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick-and-place costs
  • Cost-saving alternative for BC847 series in digital applications
  • Used for controlling IC inputs and switching loads

Applications

The PDTC114ET is widely used in various applications, including:

  • Digital applications in automotive and industrial segments
  • Controlling IC inputs
  • Switching loads
  • General-purpose switching and amplification in consumer and mobile devices

Q & A

  1. What is the collector-emitter voltage rating of the PDTC114ET?

    The collector-emitter voltage (VCEO) rating is 50 V.

  2. What is the maximum collector current of the PDTC114ET?

    The maximum collector current (IC) is 100 mA.

  3. What are the values of the built-in bias resistors?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What is the package type of the PDTC114ET?

    The PDTC114ET is packaged in a SOT23 Surface-Mounted Device (SMD) plastic package.

  5. What are the benefits of using the PDTC114ET in circuit design?

    It simplifies circuit design, reduces component count, and reduces pick-and-place costs.

  6. Is the PDTC114ET suitable for automotive applications?

    Yes, it is suitable for digital applications in automotive and industrial segments.

  7. What is the junction temperature rating of the PDTC114ET?

    The junction temperature (Tj) rating is 150 °C.

  8. Can the PDTC114ET be used as a replacement for the BC847 series?

    Yes, it is a cost-saving alternative for the BC847 series in digital applications.

  9. What is the total power dissipation of the PDTC114ET?

    The total power dissipation (Ptot) is 250 mW.

  10. Is the PDTC114ET RoHS compliant?

    Yes, the PDTC114ET is RoHS compliant).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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