PBSS5350D125
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NXP USA Inc. PBSS5350D125

Manufacturer No:
PBSS5350D125
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PBSS5350D - SMALL S
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Product Introduction

Overview

The PBSS5350T is a 50 V, 3 A PNP low VCEsat transistor manufactured by Nexperia, a company that was previously part of NXP. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed to offer high efficiency and reliability, making it suitable for a variety of power management applications.

Key Specifications

Type numberPackage versionPackage nameSize (mm)Channel typeP tot (mW)V CEO [max] (V)I C [max] (mA)h FE [min]T J [max] (°C)f T [min] (MHz)Automotive qualified
PBSS5350TSOT23SOT232.9 x 1.3 x 1PNP300.0-50.0-2000.0200.0150100.0N

Key Features

  • Low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat.
  • High collector current capability.
  • High collector current gain.
  • Improved efficiency due to reduced heat generation.

Applications

  • Power management applications.
  • Low and medium power DC/DC converters.
  • Supply line switching.
  • Battery chargers.
  • Linear voltage regulation with low voltage drop-out (LDO).

Q & A

  1. What is the maximum collector-emitter voltage of the PBSS5350T?
    The maximum collector-emitter voltage (VCEO) is 50 V.
  2. What is the package type of the PBSS5350T?
    The PBSS5350T is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. What are the key applications of the PBSS5350T?
    The key applications include power management, DC/DC converters, supply line switching, battery chargers, and linear voltage regulation.
  4. What is the maximum collector current of the PBSS5350T?
    The maximum collector current (IC) is 3 A.
  5. Is the PBSS5350T automotive qualified?
    No, the PBSS5350T is not automotive qualified.
  6. What is the maximum junction temperature of the PBSS5350T?
    The maximum junction temperature (TJ) is 150°C.
  7. What is the minimum current gain (hFE) of the PBSS5350T?
    The minimum current gain (hFE) is 200.
  8. How does the PBSS5350T improve efficiency?
    The PBSS5350T improves efficiency due to its low collector-emitter saturation voltage and corresponding low RCEsat, which reduces heat generation.
  9. What is the NPN complement of the PBSS5350T?
    The NPN complement of the PBSS5350T is the PBSS4350T.
  10. Where can I find more detailed technical information about the PBSS5350T?
    You can find detailed technical information in the datasheet and application notes available on the Nexperia website.

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