Overview
The MMZ25332BT1 is a high-performance, 2-stage InGaP HBT (Indium Gallium Phosphide Heterojunction Bipolar Transistor) broadband amplifier designed by NXP USA Inc. This amplifier is optimized for operation in the frequency range of 1.8 GHz to 2.8 GHz, making it suitable for various wireless communication applications such as femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA, and LTE.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Small-Signal Gain (S21) | Gp | 25 | 26.5 | - | dB |
| Input Return Loss (S11) | IRL | - | -17 | - | dB |
| Output Return Loss (S22) | ORL | - | -17 | - | dB |
| Power Output @ 1dB Compression | P1dB | - | 33 | - | dBm |
| Third Order Output Intercept Point, Two-Tone CW | OIP3 | - | 48 | - | dBm |
| Noise Figure | NF | - | 5.8 | - | dB |
| Supply Current | ICQ | 356 | 390 | 412 | mA |
| Supply Voltage | VCC | - | 5 | - | V |
Key Features
- High linearity and gain: The MMZ25332BT1 offers a small-signal gain of 26.5 dB and a high third-order output intercept point (OIP3) of 48 dBm, ensuring minimal distortion and high signal integrity.
- Broadband operation: The amplifier operates across a wide frequency range of 1.8 GHz to 2.8 GHz, making it versatile for various wireless communication standards.
- Low noise figure: With a noise figure of 5.8 dB, this amplifier minimizes noise contribution in the signal chain.
- Compact package: The device is packaged in a 12-lead QFN (3x3 mm) with an exposed pad, which is suitable for space-constrained designs.
- ESD protection: The MMZ25332BT1 includes ESD protection to enhance reliability and robustness against electrostatic discharge.
Applications
- Femtocell and picocell base stations: Ideal for small cell infrastructure due to its high linearity and broadband capabilities.
- WLAN (802.11g/n): Supports wireless local area network applications requiring high gain and low noise.
- W-CDMA and TD-SCDMA: Suitable for 3G wireless communication systems.
- LTE: Compatible with Long-Term Evolution wireless communication standards.
Q & A
- What is the frequency range of the MMZ25332BT1? The MMZ25332BT1 operates in the frequency range of 1.8 GHz to 2.8 GHz.
- What is the typical small-signal gain of the MMZ25332BT1? The typical small-signal gain is 26.5 dB.
- What is the power output at 1 dB compression for the MMZ25332BT1? The power output at 1 dB compression is 33 dBm.
- What is the noise figure of the MMZ25332BT1? The noise figure is 5.8 dB.
- What is the supply voltage for the MMZ25332BT1? The supply voltage is 5 V.
- What is the typical supply current for the MMZ25332BT1? The typical supply current is 390 mA.
- What type of transistor technology is used in the MMZ25332BT1? The MMZ25332BT1 uses InGaP HBT (Indium Gallium Phosphide Heterojunction Bipolar Transistor) technology.
- What are the key applications of the MMZ25332BT1? Key applications include femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA, and LTE.
- What is the package type of the MMZ25332BT1? The device is packaged in a 12-lead QFN (3x3 mm) with an exposed pad.
- Does the MMZ25332BT1 have ESD protection? Yes, the MMZ25332BT1 includes ESD protection.
