BLF8G10LS-160V,112
  • Share:

NXP USA Inc. BLF8G10LS-160V,112

Manufacturer No:
BLF8G10LS-160V,112
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
RF PFET, 1-ELEMENT, ULTRA HIGH F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G10LS-160V,112 is a 160 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon (previously part of NXP USA Inc.). This transistor is optimized for base station applications, particularly in the frequency range of 925 MHz to 960 MHz. It is known for its high efficiency, excellent ruggedness, and improved video bandwidth, making it suitable for RF power amplifiers in wireless infrastructure.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range-925960-MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-c W-CDMA-160-W
G ppower gainP L(AV) = 35 W; V DS = 30 V18.419.9-dB
RL ininput return lossP L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA-15-10-dB
η Ddrain efficiencyP L(AV) = 35 W; V DS = 30 V; 925 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA2730-%
ACPRadjacent channel power ratioP L(AV) = 35 W; V DS = 30 V; 925 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA-38-32.5-dBc

Key Features

  • Excellent ruggedness and high efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Designed for broadband operation (925 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty applications.
  • Designed for low memory effects providing excellent pre-distortability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.

Applications

  • RF power amplifiers for W-CDMA base stations.
  • Multicarrier applications in the 925 MHz to 960 MHz frequency range.

Q & A

  1. What is the BLF8G10LS-160V,112 transistor used for? The BLF8G10LS-160V,112 is used in RF power amplifiers for W-CDMA base stations and multicarrier applications in the 925 MHz to 960 MHz frequency range.
  2. What is the nominal output power of the BLF8G10LS-160V,112? The nominal output power at 3 dB gain compression is 160 W.
  3. What is the frequency range of the BLF8G10LS-160V,112? The frequency range is from 925 MHz to 960 MHz.
  4. What are the key features of the BLF8G10LS-160V,112? Key features include excellent ruggedness, high efficiency, low Rth, decoupling leads for improved video bandwidth, and internal matching for ease of use.
  5. Is the BLF8G10LS-160V,112 compliant with RoHS? Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
  6. What is the typical drain efficiency of the BLF8G10LS-160V,112? The typical drain efficiency is 30%.
  7. What is the input return loss of the BLF8G10LS-160V,112? The input return loss is typically -10 dB.
  8. Is the BLF8G10LS-160V,112 internally matched? Yes, it is internally matched for ease of use.
  9. Does the BLF8G10LS-160V,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  10. What is the current status of the BLF8G10LS-160V,112? The product has been discontinued.

Product Attributes

Frequency:902MHz ~ 960MHz
P1dB:- 
Gain:19.7dB
Noise Figure:- 
RF Type:W-CDMA
Voltage - Supply:65V
Current - Supply:- 
Test Frequency:902MHz ~ 960MHz
Mounting Type:Flange Mount
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$69.20
15

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

ERA-5SM+
ERA-5SM+
Mini-Circuits
IC RF AMP CATV 0HZ-4GHZ 4SMD
HMC441
HMC441
Analog Devices Inc.
IC RF AMP VSAT 6GHZ-18GHZ DIE
ADL5523ACPZ-R7
ADL5523ACPZ-R7
Analog Devices Inc.
IC AMP GP 400MHZ-4GHZ 8LFCSP-VD
BGA3031J
BGA3031J
NXP USA Inc.
IC AMP CATV 5MHZ-85MHZ 20HVQFN
HMC633LC4TR
HMC633LC4TR
Analog Devices Inc.
IC RF AMP GP 5.5GHZ-17GHZ 24CSMT
ADL8111ACCZN
ADL8111ACCZN
Analog Devices Inc.
28-LGA-6X6_MM MODULE/SIP
HMC606-SX
HMC606-SX
Analog Devices Inc.
IC RF AMP RADAR 2GHZ-18GHZ DIE
ADL5601ARKZ-R7
ADL5601ARKZ-R7
Analog Devices Inc.
IC RF AMP GP 50MHZ-4GHZ SOT89-3
HMC341LC3BTR-R5
HMC341LC3BTR-R5
Analog Devices Inc.
IC RF AMP VSAT 21GHZ-29GHZ 12SMT
HMC498
HMC498
Analog Devices Inc.
IC RF AMP VSAT 17GHZ-24GHZ DIE
AD8350AR15
AD8350AR15
Analog Devices Inc.
IC AMP DIFFERENTIAL LD 8-SOIC
AD8350ARM20-REEL7
AD8350ARM20-REEL7
Analog Devices Inc.
IC AMP DIFF LOW-DISTORTION 8MSOP

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN