BLF8G10LS-160V,112
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NXP USA Inc. BLF8G10LS-160V,112

Manufacturer No:
BLF8G10LS-160V,112
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
RF PFET, 1-ELEMENT, ULTRA HIGH F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G10LS-160V,112 is a 160 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon (previously part of NXP USA Inc.). This transistor is optimized for base station applications, particularly in the frequency range of 925 MHz to 960 MHz. It is known for its high efficiency, excellent ruggedness, and improved video bandwidth, making it suitable for RF power amplifiers in wireless infrastructure.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range-925960-MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-c W-CDMA-160-W
G ppower gainP L(AV) = 35 W; V DS = 30 V18.419.9-dB
RL ininput return lossP L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA-15-10-dB
η Ddrain efficiencyP L(AV) = 35 W; V DS = 30 V; 925 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA2730-%
ACPRadjacent channel power ratioP L(AV) = 35 W; V DS = 30 V; 925 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA-38-32.5-dBc

Key Features

  • Excellent ruggedness and high efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Designed for broadband operation (925 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty applications.
  • Designed for low memory effects providing excellent pre-distortability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.

Applications

  • RF power amplifiers for W-CDMA base stations.
  • Multicarrier applications in the 925 MHz to 960 MHz frequency range.

Q & A

  1. What is the BLF8G10LS-160V,112 transistor used for? The BLF8G10LS-160V,112 is used in RF power amplifiers for W-CDMA base stations and multicarrier applications in the 925 MHz to 960 MHz frequency range.
  2. What is the nominal output power of the BLF8G10LS-160V,112? The nominal output power at 3 dB gain compression is 160 W.
  3. What is the frequency range of the BLF8G10LS-160V,112? The frequency range is from 925 MHz to 960 MHz.
  4. What are the key features of the BLF8G10LS-160V,112? Key features include excellent ruggedness, high efficiency, low Rth, decoupling leads for improved video bandwidth, and internal matching for ease of use.
  5. Is the BLF8G10LS-160V,112 compliant with RoHS? Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
  6. What is the typical drain efficiency of the BLF8G10LS-160V,112? The typical drain efficiency is 30%.
  7. What is the input return loss of the BLF8G10LS-160V,112? The input return loss is typically -10 dB.
  8. Is the BLF8G10LS-160V,112 internally matched? Yes, it is internally matched for ease of use.
  9. Does the BLF8G10LS-160V,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  10. What is the current status of the BLF8G10LS-160V,112? The product has been discontinued.

Product Attributes

Frequency:902MHz ~ 960MHz
P1dB:- 
Gain:19.7dB
Noise Figure:- 
RF Type:W-CDMA
Voltage - Supply:65V
Current - Supply:- 
Test Frequency:902MHz ~ 960MHz
Mounting Type:Flange Mount
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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$69.20
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