Overview
The BFU660F is an NPN silicon microwave transistor designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT343F package. This transistor is part of NXP Semiconductors' wideband RF transistor series, optimized for various RF and microwave applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 16 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 5.5 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 2.5 | V |
| IC (Collector Current) | - | 30 | - | 60 | mA |
| Ptot (Total Power Dissipation) | Tsp ≤ 90 °C | - | - | 225 | mW |
| fT (Transition Frequency) | IC = 20 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 °C | - | 21 | - | GHz |
| Gp(max) (Maximum Power Gain) | IC = 30 mA; VCE = 1 V; f = 1.5 GHz | - | - | - | - |
Key Features
- Low noise and high linearity RF transistor
- High output third-order intercept point (27 dBm at 1.8 GHz)
- 40 GHz fT silicon technology
- Dual-emitter configuration for improved performance
- Plastic SOT343F package for surface mounting
Applications
- Analog/digital cordless applications
- X-band high output buffer amplifier
- ZigBee applications
- SDARS second stage LNA
- LTE, cellular, UMTS applications
Q & A
- What is the BFU660F transistor used for? The BFU660F is used for high-speed, low-noise RF and microwave applications.
- What package type does the BFU660F come in? The BFU660F comes in a plastic, 4-pin dual-emitter SOT343F package.
- What is the maximum collector current of the BFU660F? The maximum collector current is 60 mA.
- What is the transition frequency of the BFU660F? The transition frequency (fT) is 21 GHz at IC = 20 mA and VCE = 1 V.
- What are some common applications of the BFU660F? Common applications include analog/digital cordless, X-band high output buffer amplifier, ZigBee, SDARS second stage LNA, and LTE, cellular, UMTS.
- What is the maximum power dissipation of the BFU660F? The maximum power dissipation is 225 mW at Tsp ≤ 90 °C.
- Is the BFU660F sensitive to ESD? Yes, the BFU660F is sensitive to ElectroStatic Discharge (ESD).
- What is the collector-base breakdown voltage of the BFU660F? The collector-base breakdown voltage (VCBO) is 16 V.
- What is the emitter-base capacitance of the BFU660F? The emitter-base capacitance (CEBS) is approximately 664 fF at VEB = 0.5 V and f = 1 MHz.
- How should the BFU660F be handled to prevent damage? The BFU660F should be handled according to ESD precautions described in standards such as ANSI/ESD S20.20, IEC/ST 61340-5, or JESD625-A.
