BAV170/ZLVL
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NXP USA Inc. BAV170/ZLVL

Manufacturer No:
BAV170/ZLVL
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GEN PURP 75V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV170/ZLVL is a general-purpose diode array produced by NXP USA Inc. This component is designed for surface mount applications and is packaged in a SOT-23-3 (TO-236AB) case. It is part of NXP's extensive range of discrete semiconductor products, offering reliable performance in various electronic circuits.

The diode array features a common cathode configuration, making it suitable for a wide range of applications where multiple diodes are required in a compact form factor. Despite being marked as obsolete, it remains available from several distributors, ensuring continued support for existing designs and legacy systems.

Key Specifications

Category Description
Manufacturer NXP USA Inc.
Package / Case TO-236-3, SC-59, SOT-23-3
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 nA @ 75 V
Voltage - DC Reverse (Vr) (Max) 75 V
Operating Temperature - Junction -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Current - Average Rectified (Io) (per Diode) 215 mA (DC)
Mounting Type Surface Mount
Part Status Obsolete

Key Features

  • Compact Package: The SOT-23-3 package makes it ideal for space-constrained designs.
  • General Purpose Diodes: Suitable for a wide range of applications requiring general-purpose diodes.
  • Common Cathode Configuration: Facilitates easy integration into circuits requiring multiple diodes.
  • High Reverse Voltage: With a maximum DC reverse voltage of 75 V, it offers robust protection against reverse voltage conditions.
  • Low Forward Voltage Drop: A maximum forward voltage of 1.25 V at 150 mA ensures minimal power loss.
  • Low Reverse Leakage Current: A leakage current of 5 nA at 75 V minimizes standby power consumption.

Applications

  • Power Supply Circuits: Used for rectification, voltage regulation, and protection in power supply circuits.
  • Signal Processing: Suitable for signal rectification and protection in various signal processing applications.
  • Consumer Electronics: Found in consumer electronics such as audio equipment, TVs, and other household appliances.
  • Automotive Systems: Used in automotive systems for voltage regulation and protection.
  • Industrial Control Systems: Applied in industrial control systems for reliable operation under various conditions.

Q & A

  1. What is the package type of the BAV170/ZLVL diode array?

    The BAV170/ZLVL is packaged in a SOT-23-3 (TO-236AB) case.

  2. What is the maximum DC reverse voltage of the BAV170/ZLVL?

    The maximum DC reverse voltage is 75 V.

  3. What is the forward voltage drop of the BAV170/ZLVL at 150 mA?

    The forward voltage drop is 1.25 V at 150 mA.

  4. What is the reverse recovery time of the BAV170/ZLVL?

    The reverse recovery time is 3 µs.

  5. What is the operating temperature range of the BAV170/ZLVL?

    The operating temperature range is -65°C to 150°C.

  6. Is the BAV170/ZLVL still in production?

    No, the BAV170/ZLVL is marked as obsolete but still available from various distributors.

  7. What is the diode configuration of the BAV170/ZLVL?

    The diode configuration is 1 pair common cathode.

  8. What is the average rectified current per diode for the BAV170/ZLVL?

    The average rectified current per diode is 215 mA (DC).

  9. What is the reverse leakage current of the BAV170/ZLVL at 75 V?

    The reverse leakage current is 5 nA at 75 V.

  10. Where can I find the datasheet for the BAV170/ZLVL?

    You can find the datasheet on the official NXP website or through authorized distributors like Ariat-Tech, Bowell-IC, etc.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io) (per Diode):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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