BAS21/MI,215
  • Share:

NXP USA Inc. BAS21/MI,215

Manufacturer No:
BAS21/MI,215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH-VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21/MI,215 is a high-voltage switching diode produced by NXP USA Inc. This diode is designed for applications requiring fast switching and high reliability. It is part of the BAS21 series, known for its robust performance in various electronic circuits.

Key Specifications

CategorySpecification
Type of DiodeSwitching Diode
MountingSMD (Surface Mount Device)
Max. Off-state Voltage (Vr)250V
Load Current (Io)0.2A
Reverse Recovery Time (trr)50ns
Max. Forward Voltage (Vf) @ If1.25V
Max. Forward Impulse Current9A
Package / CaseSOT23
Operating Temperature - Junction- (Typically -55°C to 150°C for similar diodes in the series)

Key Features

  • High-voltage switching capability up to 250V.
  • Fast switching with a reverse recovery time of 50ns.
  • Low forward voltage drop of 1.25V.
  • High forward impulse current rating of 9A.
  • SMD packaging in SOT23 case for compact design.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

The BAS21/MI,215 diode is suitable for a variety of applications, including:

  • Power supply circuits requiring high-voltage switching.
  • Rectifier circuits in electronic devices.
  • Protection circuits against voltage spikes and surges.
  • Automotive and industrial control systems.
  • Consumer electronics where fast and reliable switching is necessary.

Q & A

  1. What is the maximum off-state voltage of the BAS21/MI,215 diode?
    The maximum off-state voltage is 250V.
  2. What is the load current rating of this diode?
    The load current rating is 0.2A.
  3. What is the reverse recovery time of the BAS21/MI,215 diode?
    The reverse recovery time is 50ns.
  4. What is the maximum forward voltage drop of this diode?
    The maximum forward voltage drop is 1.25V.
  5. What is the package type of the BAS21/MI,215 diode?
    The package type is SOT23.
  6. Is the BAS21/MI,215 diode ROHS compliant?
    Yes, it is ROHS3 compliant.
  7. What are some common applications of the BAS21/MI,215 diode?
    It is used in power supply circuits, rectifier circuits, protection circuits, automotive systems, and consumer electronics.
  8. What is the maximum forward impulse current rating of this diode?
    The maximum forward impulse current rating is 9A.
  9. Who is the manufacturer of the BAS21/MI,215 diode?
    The manufacturer is NXP USA Inc.
  10. What is the mounting type of the BAS21/MI,215 diode?
    The mounting type is SMD (Surface Mount Device).

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
41

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS21/MI,215 BAS21/MI,235
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Type - -
Voltage - DC Reverse (Vr) (Max) - -
Current - Average Rectified (Io) - -
Voltage - Forward (Vf) (Max) @ If - -
Speed - -
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr - -
Capacitance @ Vr, F - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -
Operating Temperature - Junction - -

Related Product By Categories

BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

PMEG4030ER115
PMEG4030ER115
NXP USA Inc.
NOW NEXPERIA PMEG4030ER RECTIFIE
BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP