BAS40-05/DG/B3R
  • Share:

Nexperia USA Inc. BAS40-05/DG/B3R

Manufacturer No:
BAS40-05/DG/B3R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY TO-236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-05/DG/B3R is a general-purpose dual Schottky diode produced by Nexperia USA Inc. This component is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed to offer high switching speed, low leakage current, and high breakdown voltage, making it suitable for a wide range of applications across various industries.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Peak Repetitive Reverse Voltage VRRM 40 V @TA = +25°C
Forward Continuous Current IFM 200 mA @TA = +25°C
Forward Surge Current IFSM 600 mA @ t < 1.0s
Forward Voltage VF 500 mV @IF = 10mA
Reverse Leakage Current IR 200 nA @VR = 30V
Total Capacitance CT 5.0 pF @VR = 0V, f = 1.0MHz
Reverse Recovery Time trr 5.0 ns @IF = IR = 10mA to IR = 1.0mA, RL = 100Ω
Operating Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C

Key Features

  • Low Forward Voltage Drop: The BAS40-05/DG/B3R features a low forward voltage drop, typically 500 mV at 10 mA, ensuring efficient operation in various applications.
  • Fast Switching: This diode is known for its fast switching capability, making it suitable for high-speed applications.
  • PN Junction Guard Ring for Transient and ESD Protection: The diode includes a PN junction guard ring for transient and ESD protection, enhancing its robustness and reliability.
  • Totally Lead-Free & Fully RoHS Compliant: The component is lead-free and fully compliant with RoHS directives, making it environmentally friendly and compliant with regulatory standards.
  • High Breakdown Voltage: With a peak repetitive reverse voltage of 40 V, this diode offers high breakdown voltage, ensuring reliable performance under various conditions.
  • Low Capacitance: The total capacitance is typically 5.0 pF at VR = 0V and f = 1.0MHz, which is beneficial for high-frequency applications.
  • Ultra High-Speed Switching: The reverse recovery time is as low as 5.0 ns, making it ideal for ultra high-speed switching applications.

Applications

The BAS40-05/DG/B3R is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: Suitable for automotive systems due to its high reliability and robustness.
  • Industrial: Used in industrial control systems, power supplies, and other high-reliability applications.
  • Power Management: Ideal for voltage clamping, polarity protection, and output rectification in power management circuits.
  • Consumer Electronics: Found in consumer electronics such as mobile devices, wearables, and computing equipment.
  • Renewable Energy: Used in solar and wind energy systems for efficient power conversion and protection.

Q & A

  1. What is the package type of the BAS40-05/DG/B3R?

    The BAS40-05/DG/B3R is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  2. What is the maximum forward continuous current of the BAS40-05/DG/B3R?

    The maximum forward continuous current is 200 mA.

  3. What is the peak repetitive reverse voltage of the BAS40-05/DG/B3R?

    The peak repetitive reverse voltage is 40 V.

  4. Is the BAS40-05/DG/B3R lead-free and RoHS compliant?

    Yes, the BAS40-05/DG/B3R is totally lead-free and fully RoHS compliant.

  5. What is the typical forward voltage drop of the BAS40-05/DG/B3R?

    The typical forward voltage drop is 500 mV at 10 mA.

  6. What is the reverse recovery time of the BAS40-05/DG/B3R?

    The reverse recovery time is typically 5.0 ns.

  7. What is the operating temperature range of the BAS40-05/DG/B3R?

    The operating temperature range is -55°C to +125°C.

  8. What is the storage temperature range of the BAS40-05/DG/B3R?

    The storage temperature range is -65°C to +150°C.

  9. Does the BAS40-05/DG/B3R have any built-in protection features?

    Yes, it includes a PN junction guard ring for transient and ESD protection.

  10. What are some common applications of the BAS40-05/DG/B3R?

    Common applications include automotive, industrial, power management, consumer electronics, and renewable energy systems.

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
310

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

BAT54S-HF
BAT54S-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAT54BRW-TP
BAT54BRW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAV199-AQ
BAV199-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.14A 3NS
BAS16VY,115
BAS16VY,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAV23C-7-F
BAV23C-7-F
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
BAV99W/DG/B3115
BAV99W/DG/B3115
NXP USA Inc.
RECTIFIER DIODE
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
MBR2545CT-1
MBR2545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BYV32EB-200PQ
BYV32EB-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HCT04DB-Q100J
74HCT04DB-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SSOP
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20