BAS21QC-QZ
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Nexperia USA Inc. BAS21QC-QZ

Manufacturer No:
BAS21QC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BAS21QC-Q/SOT8009/DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21QC-QZ is a high-performance small signal switching diode manufactured by Nexperia USA Inc. This diode is designed to offer high switching speeds, low leakage current, and high reverse voltage, making it suitable for a variety of applications requiring fast and reliable switching.

Key Specifications

Parameter Value
Diode Configuration Single
Average Forward Current 250 mA
Reverse Recovery Time (trr) ≤ 50 ns
Reverse Voltage (VR) ≤ 200 V
Capacitance (Cd) ≤ 5 pF
Operating Temperature Max 150°C
Package Type DFN1412D-3

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns, ensuring fast and efficient switching operations.
  • Low leakage current, which minimizes power loss and enhances overall system efficiency.
  • High reverse voltage of up to 200 V, providing robust protection against voltage spikes and surges.
  • Low capacitance of ≤ 5 pF, reducing the impact on high-frequency signals.
  • Compact DFN1412D-3 package, suitable for space-constrained designs.

Applications

  • High-frequency switching circuits where fast recovery times are critical.
  • Power supply circuits requiring high reverse voltage and low leakage current.
  • Audio and video equipment where low capacitance is essential for signal integrity.
  • Automotive and industrial control systems needing reliable and efficient diodes.

Q & A

  1. What is the maximum average forward current of the BAS21QC-QZ diode?

    The maximum average forward current is 250 mA.

  2. What is the reverse recovery time (trr) of the BAS21QC-QZ diode?

    The reverse recovery time (trr) is ≤ 50 ns.

  3. What is the maximum reverse voltage (VR) of the BAS21QC-QZ diode?

    The maximum reverse voltage (VR) is ≤ 200 V.

  4. What is the capacitance (Cd) of the BAS21QC-QZ diode?

    The capacitance (Cd) is ≤ 5 pF.

  5. What is the maximum operating temperature of the BAS21QC-QZ diode?

    The maximum operating temperature is 150°C.

  6. In what package type is the BAS21QC-QZ diode available?

    The BAS21QC-QZ diode is available in the DFN1412D-3 package type.

  7. What are some common applications of the BAS21QC-QZ diode?

    Common applications include high-frequency switching circuits, power supply circuits, audio and video equipment, and automotive and industrial control systems.

  8. Why is the BAS21QC-QZ diode suitable for high-frequency applications?

    The diode is suitable for high-frequency applications due to its low capacitance and fast recovery time.

  9. How does the BAS21QC-QZ diode contribute to system efficiency?

    The diode contributes to system efficiency through its low leakage current and high switching speed.

  10. What are the benefits of using the BAS21QC-QZ diode in power supply circuits?

    The benefits include high reverse voltage protection and low leakage current, which enhance the reliability and efficiency of power supply circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS21QC-QZ BAS21QB-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3
Operating Temperature - Junction 150°C 150°C

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