Overview
The 2N1711 is a silicon Planar Epitaxial NPN transistor manufactured by Microchip Technology. It is housed in a Jedec TO-39 metal case and is designed for high-performance applications such as amplifiers, oscillators, and switching circuits. This transistor is particularly valued for its low noise characteristics, making it suitable for amplifiers where noise minimization is crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 75 | V |
| Collector-Emitter Voltage (VCER) | 50 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 500 | mA |
| Total Dissipation at Tamb ≤ 25°C | 0.8 | W |
| Total Dissipation at TC ≤ 25°C | 3 | W |
| Total Dissipation at TC ≤ 100°C | 1.7 | W |
| Storage Temperature (Tstg) | -65 to 175 | °C |
| Max. Operating Junction Temperature (Tj) | 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 50 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 187.5 | °C/W |
| Collector Cut-off Current (ICBO) | 10 nA (TC = 25°C), 10 µA (TC = 150°C) | |
| Emitter Cut-off Current (IEBO) | 5 nA | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 75 V | |
| Collector-Emitter Breakdown Voltage (V(BR)CER) | 50 V | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 7 V | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.5 to 1.5 V | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.95 to 1.3 V | |
| DC Current Gain (hFE) | 20 to 300 | |
| Transition Frequency (fT) | 70 to 100 MHz |
Key Features
- Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
- High performance in amplifier, oscillator, and switching circuits.
- Low noise characteristics, making it ideal for low noise amplifiers.
- Multiple levels of product assurance (JAN, JANTX, JANTXV) as specified in MIL-PRF-19500/225.
- Wide operating temperature range with a maximum junction temperature of 175°C.
Applications
The 2N1711 transistor is versatile and can be used in various high-performance applications, including:
- Amplifiers where low noise is critical.
- Oscillator circuits requiring stability and low noise.
- Switching circuits that demand high reliability and performance.
- General-purpose amplification in audio and RF circuits.
Q & A
- What is the collector-base voltage rating of the 2N1711 transistor?
The collector-base voltage (VCBO) is rated at 75 V. - What is the maximum collector current of the 2N1711 transistor?
The maximum collector current (IC) is 500 mA. - What is the storage temperature range for the 2N1711 transistor?
The storage temperature range is from -65°C to 175°C. - What are the typical applications of the 2N1711 transistor?
The 2N1711 is typically used in high-performance amplifier, oscillator, and switching circuits. - What is the thermal resistance junction-case (Rthj-case) of the 2N1711 transistor?
The thermal resistance junction-case (Rthj-case) is 50 °C/W. - What are the different levels of product assurance available for the 2N1711 transistor?
The levels of product assurance include JAN, JANTX, and JANTXV as specified in MIL-PRF-19500/225. - What is the maximum operating junction temperature of the 2N1711 transistor?
The maximum operating junction temperature (Tj) is 175°C. - What is the collector-emitter saturation voltage (VCE(sat)) of the 2N1711 transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.5 to 1.5 V. - What is the transition frequency (fT) of the 2N1711 transistor?
The transition frequency (fT) ranges from 70 to 100 MHz. - Is the 2N1711 transistor suitable for life support devices or systems?
No, the 2N1711 transistor is not authorized for use as critical components in life support devices or systems without express written approval from the manufacturer.
