Overview
The BC856BW is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is designed for control and signal processing applications. This transistor is packaged in the SOT-323 (SC-70) case, which is suitable for surface mount technology (SMD). The BC856BW is characterized by its high collector-emitter voltage (VCEO) of 65V, collector current (IC) of 100mA, and power dissipation of 200mW. It operates up to a maximum junction temperature of 150°C, making it versatile for various industrial and commercial applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type of Transistor | PNP, Bipolar |
| Package | SOT-323 (SC-70) |
| Collector-Emitter Voltage (VCEO) | 65 V |
| Collector Current (IC) | 0.1 A |
| Power Dissipation (Ptot) | 0.2 W |
| Pulsed Collector Current | 0.2 A |
| Current Gain (hFE) | 220 - 475 |
| Mounting | SMD |
| Frequency | 100 MHz |
| Maximum Junction Temperature (Tjmax) | 150°C |
Key Features
- General-purpose PNP bipolar junction transistor suitable for control and signal processing applications.
- Compliant with RoHS, REACH, and Conflict Minerals regulations.
- Available in three current gain groups (A, B, C) to cater to different application requirements.
- AEC-Q101 qualified versions available (suffix -Q/-AQ).
- High collector-emitter voltage and current capabilities make it suitable for a wide range of applications.
- Surface mount technology (SMD) in SOT-323 package for compact designs.
Applications
- Signal processing and amplification.
- Switching applications.
- Automotive industry due to its AEC-Q101 qualification.
- Commercial and industrial grade applications requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC856BW transistor?
The collector-emitter voltage (VCEO) of the BC856BW transistor is 65V.
- What is the maximum collector current (IC) of the BC856BW transistor?
The maximum collector current (IC) of the BC856BW transistor is 100mA.
- What is the power dissipation (Ptot) of the BC856BW transistor?
The power dissipation (Ptot) of the BC856BW transistor is 200mW.
- What is the maximum junction temperature (Tjmax) of the BC856BW transistor?
The maximum junction temperature (Tjmax) of the BC856BW transistor is 150°C.
- Is the BC856BW transistor RoHS and REACH compliant?
Yes, the BC856BW transistor is compliant with RoHS, REACH, and Conflict Minerals regulations.
- What are the typical applications of the BC856BW transistor?
The BC856BW transistor is typically used in signal processing, switching, and amplification applications, including the automotive industry.
- What is the frequency range of the BC856BW transistor?
The BC856BW transistor has a frequency range of up to 100 MHz.
- Is the BC856BW transistor available in AEC-Q101 qualified versions?
Yes, the BC856BW transistor is available in AEC-Q101 qualified versions (suffix -Q/-AQ).
- What is the package type of the BC856BW transistor?
The BC856BW transistor is packaged in the SOT-323 (SC-70) case.
- What is the current gain range of the BC856BW transistor?
The current gain (hFE) of the BC856BW transistor ranges from 220 to 475.
