BC857BV-7
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Diodes Incorporated BC857BV-7

Manufacturer No:
BC857BV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BV-7 is a PNP general-purpose double transistor produced by Diodes Incorporated, now part of Nexperia. This transistor is housed in an ultra-small and flat lead Surface-Mounted Device (SMD) plastic package, specifically the SOT666 package. It is designed for general-purpose switching and amplification applications, offering a compact solution that reduces the number of components and required board space.

Key Specifications

ParameterValue
TypePNP double transistor
PackageSOT666
Package Size1.6 mm x 1.2 mm x 0.55 mm
Total Power Dissipation (Ptot)300 mW
Maximum Collector-Emitter Voltage (VCEO)-45 V
Maximum Collector Current (IC)-100 mA
Minimum Current Gain (hFE)200
Maximum Current Gain (hFE)450
Maximum Junction Temperature (TJ)150°C
Minimum Transition Frequency (fT)100 MHz

Key Features

  • Ultra-small SOT666 package, reducing required board space and pick-and-place costs.
  • General-purpose switching and amplification capabilities.
  • High current gain (hFE) range from 200 to 450.
  • Maximum collector-emitter voltage of -45 V and maximum collector current of -100 mA.
  • Total power dissipation of 300 mW.
  • NPN complement: BC847BV.

Applications

The BC857BV-7 is suitable for a wide range of applications, including:

  • General-purpose switching and amplification.
  • Automotive and industrial electronics.
  • Consumer and mobile devices.
  • Power and computing applications.
  • Wearables and other compact electronic devices.

Q & A

  1. What is the package type of the BC857BV-7 transistor?
    The BC857BV-7 transistor is housed in a SOT666 ultra-small and flat lead Surface-Mounted Device (SMD) plastic package.
  2. What are the maximum collector-emitter voltage and collector current for the BC857BV-7?
    The maximum collector-emitter voltage is -45 V, and the maximum collector current is -100 mA.
  3. What is the total power dissipation of the BC857BV-7?
    The total power dissipation is 300 mW.
  4. What is the current gain range of the BC857BV-7?
    The current gain (hFE) ranges from 200 to 450.
  5. What is the maximum junction temperature for the BC857BV-7?
    The maximum junction temperature is 150°C.
  6. What is the minimum transition frequency of the BC857BV-7?
    The minimum transition frequency is 100 MHz.
  7. Is the BC857BV-7 automotive qualified?
    No, the BC857BV-7 is not automotive qualified.
  8. What is the NPN complement of the BC857BV-7?
    The NPN complement is the BC847BV.
  9. How does the BC857BV-7 reduce costs and board space?
    The BC857BV-7 reduces the number of components and required board space due to its ultra-small package, and it also reduces pick-and-place costs.
  10. What are some common applications of the BC857BV-7?
    Common applications include general-purpose switching and amplification, automotive and industrial electronics, consumer and mobile devices, power and computing applications, and wearables.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:150mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number BC857BV-7 BCM857BV-7 BC847BV-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V 45V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 150mW 357mW 150mW
Frequency - Transition 100MHz 175MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

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