BAW56HDWQ-13
  • Share:

Diodes Incorporated BAW56HDWQ-13

Manufacturer No:
BAW56HDWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE FS 100V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56HDWQ-13 is a surface mount switching diode array manufactured by Diodes Incorporated. This component is designed for general purpose switching applications and is particularly suited for use in harsh environments, such as those found in the automotive industry. The diode array is packaged in a small SOT363 package, which offers a compact footprint and lower cost compared to individual diodes. The BAW56HDWQ-13 is qualified to AEC-Q101 standards, ensuring high reliability and performance in demanding conditions.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
DC Blocking Voltage VR 71 VRMS
Forward Continuous Current IFM 250 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current IFSM 1.0 A t = 1.0 ms
Power Dissipation PD 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Reverse Breakdown Voltage VBR 100 V I = 2.5 mA
Forward Voltage VF 1.0 V I = 50 mA
Reverse Current IR 30 nA V = 25 V, T = +150°C
Total Capacitance CT 1.5 pF V = 0, f = 1.0 MHz
Reverse Recovery Time tRR 4.0 ns

Key Features

  • Fast Switching Speed: The BAW56HDWQ-13 features a super-fast reverse recovery time of 4.0 ns, making it suitable for higher frequency switching applications.
  • High Reverse Breakdown Voltage: With a peak repetitive reverse voltage of 100 V, this diode array offers high voltage handling capabilities.
  • Low Forward Voltage: The forward voltage drop is as low as 0.715 V at 1.0 mA, reducing power losses in switching applications.
  • Low Leakage Current: The diode array has a low reverse leakage current of 0.5 µA at 80 V, ensuring minimal current loss.
  • Low Capacitance: Total capacitance is 1.5 pF at 1.0 MHz, which is beneficial for high-frequency applications.
  • Compact Package: The SOT363 package provides a small footprint, making it ideal for space-constrained designs.
  • Automotive Compliance: Qualified to AEC-Q101 standards, this diode array is reliable in harsh automotive environments.
  • Lead-Free and RoHS Compliant: The BAW56HDWQ-13 is totally lead-free, halogen-free, and antimony-free, complying with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2).

Applications

  • Automotive Systems: The BAW56HDWQ-13 is specifically designed for use in the automotive industry, where it can handle the harsh environments and high reliability requirements.
  • General Purpose Switching: Suitable for various general purpose switching applications where fast switching speed and low forward voltage are required.
  • High-Frequency Applications: The low capacitance and fast reverse recovery time make this diode array suitable for high-frequency switching applications.
  • Space-Constrained Designs: The compact SOT363 package makes it ideal for designs where space is limited.

Q & A

  1. What is the peak repetitive reverse voltage of the BAW56HDWQ-13?

    The peak repetitive reverse voltage is 100 V.

  2. What is the forward continuous current rating of the BAW56HDWQ-13?

    The forward continuous current rating is 250 mA.

  3. What is the reverse recovery time of the BAW56HDWQ-13?

    The reverse recovery time is 4.0 ns.

  4. Is the BAW56HDWQ-13 compliant with automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  5. What is the package type of the BAW56HDWQ-13?

    The package type is SOT363.

  6. Is the BAW56HDWQ-13 lead-free and RoHS compliant?

    Yes, it is totally lead-free, halogen-free, and antimony-free, and complies with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2).

  7. What is the operating temperature range of the BAW56HDWQ-13?

    The operating and storage temperature range is -65 to +150°C.

  8. What is the total capacitance of the BAW56HDWQ-13?

    The total capacitance is 1.5 pF at 1.0 MHz.

  9. What are some typical applications of the BAW56HDWQ-13?

    Typical applications include automotive systems, general purpose switching, high-frequency applications, and space-constrained designs.

  10. What is the forward voltage drop of the BAW56HDWQ-13?

    The forward voltage drop is as low as 0.715 V at 1.0 mA.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.35
1,027

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAW56HDWQ-13 BAW56HDW-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Diode Configuration 1 Pair Common Anode 2 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 2.5 µA @ 75 V 500 nA @ 80 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 155°C
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

Related Product By Categories

BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BYV44-500,127
BYV44-500,127
WeEn Semiconductors
DIODE ARRAY GP 500V 30A TO220AB
BAV99S-AU_R1_000A1
BAV99S-AU_R1_000A1
Panjit International Inc.
SOT-363, SWITCHING
BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV99W
BAV99W
Diotec Semiconductor
DIODE SOT-323 85V 0.2A 4NS
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAS40-05-E3-18
BAS40-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99STB6-AU_R1_000A1
BAV99STB6-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAS70-04 RFG
BAS70-04 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
MUR3020PTG
MUR3020PTG
onsemi
DIODE ARRAY GP 200V 15A SOT93
BAW56WE6327HTSA1
BAW56WE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Brand

BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAS40-05-7
BAS40-05-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAW56T-7
BAW56T-7
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAT54CDW-13-F
BAT54CDW-13-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAS16T-7-F
BAS16T-7-F
Diodes Incorporated
DIODE GP 85V 75MA SOT523
BZX84C12S-7-F
BZX84C12S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 12V SOT363
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C30T-7-F
BZX84C30T-7-F
Diodes Incorporated
DIODE ZENER 30V 150MW SOT523
BZX84C3V9-7-G
BZX84C3V9-7-G
Diodes Incorporated
DIODE ZENER
2N7002-13-F-79
2N7002-13-F-79
Diodes Incorporated
DIODE
74HC164D14
74HC164D14
Diodes Incorporated
IC SHIFT REGISTER SER 14DIP