BAW56HDWQ-13
  • Share:

Diodes Incorporated BAW56HDWQ-13

Manufacturer No:
BAW56HDWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE FS 100V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56HDWQ-13 is a surface mount switching diode array manufactured by Diodes Incorporated. This component is designed for general purpose switching applications and is particularly suited for use in harsh environments, such as those found in the automotive industry. The diode array is packaged in a small SOT363 package, which offers a compact footprint and lower cost compared to individual diodes. The BAW56HDWQ-13 is qualified to AEC-Q101 standards, ensuring high reliability and performance in demanding conditions.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
DC Blocking Voltage VR 71 VRMS
Forward Continuous Current IFM 250 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current IFSM 1.0 A t = 1.0 ms
Power Dissipation PD 350 mW
Thermal Resistance Junction to Ambient Air RJA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Reverse Breakdown Voltage VBR 100 V I = 2.5 mA
Forward Voltage VF 1.0 V I = 50 mA
Reverse Current IR 30 nA V = 25 V, T = +150°C
Total Capacitance CT 1.5 pF V = 0, f = 1.0 MHz
Reverse Recovery Time tRR 4.0 ns

Key Features

  • Fast Switching Speed: The BAW56HDWQ-13 features a super-fast reverse recovery time of 4.0 ns, making it suitable for higher frequency switching applications.
  • High Reverse Breakdown Voltage: With a peak repetitive reverse voltage of 100 V, this diode array offers high voltage handling capabilities.
  • Low Forward Voltage: The forward voltage drop is as low as 0.715 V at 1.0 mA, reducing power losses in switching applications.
  • Low Leakage Current: The diode array has a low reverse leakage current of 0.5 µA at 80 V, ensuring minimal current loss.
  • Low Capacitance: Total capacitance is 1.5 pF at 1.0 MHz, which is beneficial for high-frequency applications.
  • Compact Package: The SOT363 package provides a small footprint, making it ideal for space-constrained designs.
  • Automotive Compliance: Qualified to AEC-Q101 standards, this diode array is reliable in harsh automotive environments.
  • Lead-Free and RoHS Compliant: The BAW56HDWQ-13 is totally lead-free, halogen-free, and antimony-free, complying with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2).

Applications

  • Automotive Systems: The BAW56HDWQ-13 is specifically designed for use in the automotive industry, where it can handle the harsh environments and high reliability requirements.
  • General Purpose Switching: Suitable for various general purpose switching applications where fast switching speed and low forward voltage are required.
  • High-Frequency Applications: The low capacitance and fast reverse recovery time make this diode array suitable for high-frequency switching applications.
  • Space-Constrained Designs: The compact SOT363 package makes it ideal for designs where space is limited.

Q & A

  1. What is the peak repetitive reverse voltage of the BAW56HDWQ-13?

    The peak repetitive reverse voltage is 100 V.

  2. What is the forward continuous current rating of the BAW56HDWQ-13?

    The forward continuous current rating is 250 mA.

  3. What is the reverse recovery time of the BAW56HDWQ-13?

    The reverse recovery time is 4.0 ns.

  4. Is the BAW56HDWQ-13 compliant with automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  5. What is the package type of the BAW56HDWQ-13?

    The package type is SOT363.

  6. Is the BAW56HDWQ-13 lead-free and RoHS compliant?

    Yes, it is totally lead-free, halogen-free, and antimony-free, and complies with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2).

  7. What is the operating temperature range of the BAW56HDWQ-13?

    The operating and storage temperature range is -65 to +150°C.

  8. What is the total capacitance of the BAW56HDWQ-13?

    The total capacitance is 1.5 pF at 1.0 MHz.

  9. What are some typical applications of the BAW56HDWQ-13?

    Typical applications include automotive systems, general purpose switching, high-frequency applications, and space-constrained designs.

  10. What is the forward voltage drop of the BAW56HDWQ-13?

    The forward voltage drop is as low as 0.715 V at 1.0 mA.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.35
1,027

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAW56HDWQ-13 BAW56HDW-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Diode Configuration 1 Pair Common Anode 2 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 2.5 µA @ 75 V 500 nA @ 80 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 155°C
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

Related Product By Categories

BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAT54A-AQ
BAT54A-AQ
Diotec Semiconductor
SCHOTTKY SOT-23 30V 0.2A
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
BAV99W/DG/B3135
BAV99W/DG/B3135
NXP USA Inc.
NEXPERIA BAV99 - DUAL HIGH-SPEE
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAV74_D87Z
BAV74_D87Z
onsemi
DIODE ARRAY GP 50V 200MA SOT23-3
BAS 40-07 B6327
BAS 40-07 B6327
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT143
STPS10170CB
STPS10170CB
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
BAS40-06/DG/B2,215
BAS40-06/DG/B2,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V TO236AB

Related Product By Brand

BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C3V6S-7-F
BZX84C3V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZX84C36S-7
BZX84C36S-7
Diodes Incorporated
DIODE ZENER ARRAY 36V SOT363
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C20-7
BZX84C20-7
Diodes Incorporated
DIODE ZENER 20V 300MW SOT23-3
BZX84C4V3-7-G
BZX84C4V3-7-G
Diodes Incorporated
DIODE ZENER
BCX17TA
BCX17TA
Diodes Incorporated
TRANS PNP 45V 0.5A SOT23-3
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
LM2903TH-13
LM2903TH-13
Diodes Incorporated
IC COMPARATOR DUAL DIFF 8TSSOP
74LVC1G07SE-7
74LVC1G07SE-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT353