Overview
The Central Semiconductor Corp. BAS28 BK TIN/LEAD is a surface mount silicon dual, isolated high-speed switching diode. This device is fabricated using the epitaxial planar process and is packaged in an epoxy molded SOT-143 surface mount case. It is designed for high-speed switching applications and consists of two electrically isolated ultra-high speed silicon switching diodes.
However, it is important to note that devices manufactured in the SOT-143 package have been discontinued and are now classified as End of Life (EOL).
Key Specifications
| Parameter | Symbol | Units | Min | Max |
|---|---|---|---|---|
| Continuous Reverse Voltage | VR | V | - | 75 |
| Peak Repetitive Reverse Voltage | VRRM | V | - | 85 |
| Continuous Forward Current | IF | mA | - | 250 |
| Peak Repetitive Forward Current | IFRM | mA | - | 500 |
| Peak Forward Surge Current (tp=1.0μs) | IFSM | A | - | 4.0 |
| Peak Forward Surge Current (tp=1.0ms) | IFSM | A | - | 2.0 |
| Peak Forward Surge Current (tp=1.0s) | IFSM | A | - | 1.0 |
| Power Dissipation | PD | mW | - | 350 |
| Operating and Storage Junction Temperature | TJ, Tstg | °C | -65 | +150 |
| Thermal Resistance (ΘJA) | ΘJA | °C/W | - | 357 |
| Reverse Current (VR=75V, TA=25°C) | IR | μA | - | 1.0 |
| Forward Voltage (IF=1.0mA) | VF | mV | - | 715 |
| Forward Voltage (IF=10mA) | VF | mV | - | 855 |
| Forward Voltage (IF=50mA) | VF | mV | - | 1000 |
| Junction Capacitance (VR=0, f=1.0MHz) | CJ | pF | - | 2.0 |
| Reverse Recovery Time (IF=IR=10mA, Irr=1.0mA, RL=100Ω) | trr | ns | - | 6.0 |
Key Features
- High-Speed Switching: The BAS28 is designed for high-speed switching applications with a maximum reverse recovery time of 6 ns.
- Dual Isolated Diodes: The device consists of two electrically isolated ultra-high speed silicon switching diodes, making it suitable for applications requiring independent diode operations.
- Compact Package: Encapsulated in a small plastic SMD SOT-143 package, which is 2.9 mm x 1.3 mm x 1 mm in size.
- AEC-Q101 Qualified: The BAS28 is qualified to the AEC-Q101 standard, making it suitable for automotive applications.
- Wide Operating Temperature Range: The device operates over a junction temperature range of -65°C to +150°C).
Applications
- High-Speed Switching Circuits: Ideal for surface-mounted circuits that require fast switching times).
- Automotive Systems: AEC-Q101 qualification makes it suitable for various automotive applications).
- Industrial and Consumer Electronics: Can be used in a variety of industrial and consumer electronic devices where high-speed switching is necessary).
- Power Management: Useful in power management circuits due to its high-speed switching capabilities and low forward voltage drop).
Q & A
- What is the BAS28 BK TIN/LEAD?
The BAS28 BK TIN/LEAD is a surface mount silicon dual, isolated high-speed switching diode produced by Central Semiconductor Corp.
- What package type does the BAS28 use?
The BAS28 is packaged in an epoxy molded SOT-143 surface mount case.
- What is the maximum continuous reverse voltage of the BAS28?
The maximum continuous reverse voltage is 75 V.
- What is the maximum peak repetitive forward current of the BAS28?
The maximum peak repetitive forward current is 500 mA.
- What is the thermal resistance (ΘJA) of the BAS28?
The thermal resistance (ΘJA) is 357 °C/W.
- Is the BAS28 AEC-Q101 qualified?
Yes, the BAS28 is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the reverse recovery time of the BAS28?
The reverse recovery time is a maximum of 6 ns.
- What is the operating temperature range of the BAS28?
The operating and storage junction temperature range is -65°C to +150°C.
- Is the BAS28 still in production?
No, devices manufactured in the SOT-143 package have been discontinued and are now classified as End of Life (EOL).
- What are some common applications of the BAS28?
The BAS28 is used in high-speed switching circuits, automotive systems, industrial and consumer electronics, and power management circuits.
