1N5361B BK TIN/LEAD
  • Share:

Central Semiconductor Corp 1N5361B BK TIN/LEAD

Manufacturer No:
1N5361B BK TIN/LEAD
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
THROUGH-HOLE-DIODE-ZENER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5361B BK TIN/LEAD is a small signal transistor produced by Central Semiconductor Corp. This component is part of the 1N5361 series and is specifically designed for general-purpose amplifier and switching applications. It is housed in a TO-18 case, which is a compact and widely used package for small signal transistors.

Key Specifications

ParameterValue
Collector-Base Voltage (VCB)25 V
Collector-Emitter Voltage (VCE)25 V
Emitter-Base Voltage (VEB)5.0 V
Collector Current (IC)40 mA
Base Current (IB)10 mA
Current Gain (hFE)100
Saturation Voltage (VCE(SAT))0.5 V
Transition Frequency (fT)70 MHz
Input Capacitance (Cob)10 pF

Key Features

  • Compact TO-18 case for space-efficient designs.
  • General-purpose amplifier and switching capabilities.
  • Low saturation voltage for efficient switching operations.
  • High transition frequency for high-frequency applications.
  • Available in both Pb-free and Tin/Lead plated versions.

Applications

The 1N5361B BK TIN/LEAD transistor is suitable for a variety of applications, including:

  • General-purpose amplification in audio and signal processing circuits.
  • Switching circuits in digital and analog systems.
  • Low-power DC-DC converters and voltage regulators.
  • Automotive and industrial control systems.

Q & A

  1. What is the collector-base voltage rating of the 1N5361B BK TIN/LEAD transistor?
    The collector-base voltage rating is 25 V.
  2. What is the maximum collector current for this transistor?
    The maximum collector current is 40 mA.
  3. What is the typical current gain (hFE) of this transistor?
    The typical current gain is 100.
  4. What is the saturation voltage (VCE(SAT)) of the 1N5361B BK TIN/LEAD transistor?
    The saturation voltage is 0.5 V.
  5. What is the transition frequency (fT) of this transistor?
    The transition frequency is 70 MHz.
  6. Is the 1N5361B BK TIN/LEAD transistor available in Pb-free versions?
    Yes, it is available in both Pb-free and Tin/Lead plated versions.
  7. What type of package does the 1N5361B BK TIN/LEAD transistor use?
    It is housed in a TO-18 case.
  8. What are some common applications for the 1N5361B BK TIN/LEAD transistor?
    It is used in general-purpose amplification, switching circuits, low-power DC-DC converters, and automotive and industrial control systems.
  9. What is the emitter-base voltage rating of the 1N5361B BK TIN/LEAD transistor?
    The emitter-base voltage rating is 5.0 V.
  10. Where can I find detailed specifications for the 1N5361B BK TIN/LEAD transistor?
    Detailed specifications can be found on Central Semiconductor Corp.'s official website and in their datasheets.

Product Attributes

Voltage - Zener (Nom) (Vz):27 V
Tolerance:±5%
Power - Max:5 W
Impedance (Max) (Zzt):5 Ohms
Current - Reverse Leakage @ Vr:500 nA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:T-18, Axial
Supplier Device Package:AX-5W
0 Remaining View Similar

In Stock

-
166

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP

Related Product By Categories

SZMMBZ5231BLT3G
SZMMBZ5231BLT3G
onsemi
DIODE ZENER 5.1V 225MW SOT23-3
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84-C2V4,215
BZX84-C2V4,215
Nexperia USA Inc.
DIODE ZENER 2.4V 250MW TO236AB
BZX84B10_R1_00001
BZX84B10_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5342B
1N5342B
NTE Electronics, Inc
DIODE ZENER 6.8V 5W AXIAL
BZX384C11-E3-08
BZX384C11-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323
BZX84C13W_R1_00001
BZX84C13W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZV55C13 L0G
BZV55C13 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZV55C39/TR
BZV55C39/TR
Microchip Technology
VOLTAGE REGULATOR
BZX84C51-7-F-79
BZX84C51-7-F-79
Diodes Incorporated
DIODE ZENER
IP4256CZ5-W,115
IP4256CZ5-W,115
Nexperia USA Inc.
ZENER DIODE, 12V V(Z), 5%, 0.5W,
BZX84C5V6LYFHT116
BZX84C5V6LYFHT116
Rohm Semiconductor
250MW, 5.6V, SOT-23, AUTOMOTIVE

Related Product By Brand

1N34A TR
1N34A TR
Central Semiconductor Corp
TRANSISTOR
BZX84C5V1 TR PBFREE
BZX84C5V1 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 350MW SOT23
BZX84C18 TR PBFREE
BZX84C18 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 18V 350MW SOT23
1N5245B TR PBFREE
1N5245B TR PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 500MW DO35
1N4733A BK PBFREE
1N4733A BK PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 1W DO41
1N5352B BK
1N5352B BK
Central Semiconductor Corp
TRANSISTOR
2N5061 PBFREE
2N5061 PBFREE
Central Semiconductor Corp
SCR 60V 800MA TO92
TIP41C PBFREE
TIP41C PBFREE
Central Semiconductor Corp
TRANS NPN 100V 6A TO220-3
TIP42C SL PBFREE
TIP42C SL PBFREE
Central Semiconductor Corp
TRANS PNP 100V 6A TO220-3
TIP117 PBFREE
TIP117 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
TIP35C SL
TIP35C SL
Central Semiconductor Corp
TRANS NPN 100V 25A TO218
TIP30C PBFREE
TIP30C PBFREE
Central Semiconductor Corp
TRANS PNP 100V 1A TO220-3