HMC902LP3E
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Analog Devices Inc. HMC902LP3E

Manufacturer No:
HMC902LP3E
Manufacturer:
Analog Devices Inc.
Package:
Strip
Description:
IC RF AMP GP 5GHZ-10GHZ 16QFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The HMC902LP3E is a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low noise amplifier produced by Analog Devices Inc. This component is designed to operate within the frequency range of 5 GHz to 11 GHz, making it suitable for various microwave and millimeter-wave applications. It is housed in a leadless 3x3 mm plastic surface mount package, enhancing its integration into compact designs.

Key Specifications

ParameterValue
Frequency Range5 GHz to 11 GHz
Small Signal Gain19.5 dB
Noise Figure1.8 dB
Output IP328 dBm
Package TypeLeadless 3x3 mm plastic surface mount
Transistor TypepHEMT (pseudomorphic high electron mobility transistor)

Key Features

  • Low noise figure of 1.8 dB, ensuring minimal signal degradation.
  • High small signal gain of 19.5 dB, enhancing signal strength.
  • High output IP3 of 28 dBm, providing good linearity and reducing distortion.
  • Compact leadless 3x3 mm plastic surface mount package, ideal for space-constrained designs.
  • Operates on a single positive supply voltage, simplifying power management.

Applications

  • Microwave and millimeter-wave communication systems.
  • Radar systems, including phased array and pulse radar.
  • Satellite communications and VSAT systems.
  • Test and measurement equipment.
  • Wireless infrastructure, such as base stations and repeaters.

Q & A

  1. What is the frequency range of the HMC902LP3E? The HMC902LP3E operates between 5 GHz and 11 GHz.
  2. What is the noise figure of the HMC902LP3E? The noise figure is 1.8 dB.
  3. What is the small signal gain of the HMC902LP3E? The small signal gain is 19.5 dB.
  4. What is the output IP3 of the HMC902LP3E? The output IP3 is 28 dBm.
  5. In what type of package is the HMC902LP3E housed? The HMC902LP3E is housed in a leadless 3x3 mm plastic surface mount package.
  6. What type of transistor is used in the HMC902LP3E? The HMC902LP3E uses a pseudomorphic high electron mobility transistor (pHEMT).
  7. What are some common applications of the HMC902LP3E? Common applications include microwave and millimeter-wave communication systems, radar systems, satellite communications, test and measurement equipment, and wireless infrastructure.
  8. How does the HMC902LP3E contribute to signal quality? The HMC902LP3E contributes to signal quality through its low noise figure and high linearity, as indicated by its high output IP3.
  9. Is the HMC902LP3E suitable for space-constrained designs? Yes, the HMC902LP3E is suitable for space-constrained designs due to its compact package size.
  10. What is the typical supply voltage for the HMC902LP3E? The HMC902LP3E operates on a single positive supply voltage, but specific voltage details should be referenced from the datasheet.

Product Attributes

Frequency:5GHz ~ 10GHz
P1dB:16dBm
Gain:19.5dB
Noise Figure:1.8dB
RF Type:General Purpose
Voltage - Supply:3.5V
Current - Supply:110mA
Test Frequency:- 
Mounting Type:Surface Mount
Package / Case:16-VFQFN Exposed Pad
Supplier Device Package:16-QFN (3x3)
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In Stock

$37.65
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Same Series
129787-HMC902LP3E
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HMC902-SX
IC RF AMP GP 5GHZ-10GHZ DIE
HMC902LP3E
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Similar Products

Part Number HMC902LP3E HMC903LP3E
Manufacturer Analog Devices Inc. Analog Devices Inc.
Product Status Active Active
Frequency 5GHz ~ 10GHz 6GHz ~ 17GHz
P1dB 16dBm 13dBm
Gain 19.5dB 18dB
Noise Figure 1.8dB 2.2dB
RF Type General Purpose General Purpose
Voltage - Supply 3.5V 3.5V
Current - Supply 110mA 110mA
Test Frequency - -
Mounting Type Surface Mount Surface Mount
Package / Case 16-VFQFN Exposed Pad 16-VFQFN Exposed Pad
Supplier Device Package 16-QFN (3x3) 16-QFN (3x3)

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