Overview
The HMC784AMS8GETR is a high-power Single-Pole Double-Throw (SPDT) RF switch produced by Analog Devices Inc. This device is designed for use in transmit-receive applications that require very low distortion at high input signal power levels. It is packaged in an 8-lead MSOPG package and operates from DC to 4 GHz, making it suitable for a variety of wireless and RF applications.
Key Specifications
Parameter | Frequency | Min. | Typ. | Max. | Units |
---|---|---|---|---|---|
Insertion Loss | DC - 1.0 GHz | 0.4 | 0.6 | 0.8 | dB |
Insertion Loss | DC - 2.0 GHz | 0.6 | 0.8 | 1.1 | dB |
Insertion Loss | DC - 3.0 GHz | 0.8 | 1.1 | 1.3 | dB |
Insertion Loss | DC - 4.0 GHz | 0.9 | 1.3 | 2.0 | dB |
Isolation | DC - 4.0 GHz | 26 | 30 | dB | |
Return Loss (On State) | DC - 1.0 GHz | 35 | dB | ||
Return Loss (On State) | DC - 2.0 GHz | 30 | dB | ||
Return Loss (On State) | DC - 3.0 GHz | 20 | dB | ||
Return Loss (On State) | DC - 4.0 GHz | 10 | dB | ||
Bias Voltage | +3V to +8V | V | |||
Typical Idd | +3V | 0.5 μA | μA | ||
Typical Idd | +5V | 2 μA | μA | ||
Typical Idd | +8V | 20 μA | μA | ||
Operating Temperature | -40°C to +85°C | °C | |||
Storage Temperature | -65°C to +150°C | °C |
Key Features
- High power handling capability with Input P1dB of +40 dBm at Vdd = +8V and high third order intercept of +60 dBm at +5V bias.
- Low insertion loss of 0.4 dB and high isolation of up to 30 dB across the frequency range.
- Single positive supply operation from +3 Vdc to +8 Vdc with very low DC current.
- Control inputs compatible with CMOS and most TTL logic families.
- On-chip circuitry ensures reflective shorts when the switch is in the “OFF” state.
- DC blocking capacitors required at RF ports to determine the lowest transmission frequency.
Applications
- Cellular/4G Infrastructure
- WiMAX, WiBro & Fixed Wireless
- Automotive Telematics
- Mobile Radio
- Test Equipment
Q & A
- What is the frequency range of the HMC784AMS8GETR? The device operates from DC to 4 GHz.
- What is the typical insertion loss of the HMC784AMS8GETR? The typical insertion loss is 0.4 dB at DC - 1.0 GHz, increasing to 1.3 dB at DC - 4.0 GHz.
- What are the bias voltage and current requirements? The device operates with a single positive supply from +3 Vdc to +8 Vdc, with typical currents ranging from 0.5 μA to 20 μA depending on the bias voltage.
- What logic families are compatible with the control inputs? The control inputs are compatible with CMOS and most TTL logic families.
- What is the isolation performance of the HMC784AMS8GETR? The isolation is up to 30 dB across the frequency range.
- What are the operating and storage temperature ranges? The operating temperature range is -40°C to +85°C, and the storage temperature range is -65°C to +150°C.
- Is the HMC784AMS8GETR RoHS compliant? Yes, the device is RoHS compliant.
- What package type is the HMC784AMS8GETR available in? The device is available in an 8-lead MSOPG package.
- What are the typical applications for the HMC784AMS8GETR? Typical applications include cellular/4G infrastructure, WiMAX, WiBro & fixed wireless, automotive telematics, mobile radio, and test equipment.
- Are DC blocking capacitors required for the RF ports? Yes, DC blocking capacitors are required at the RF ports to determine the lowest transmission frequency.