HMC637A-SX
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Analog Devices Inc. HMC637A-SX

Manufacturer No:
HMC637A-SX
Manufacturer:
Analog Devices Inc.
Package:
Tray
Description:
IC RF AMP VSAT 0HZ-6GHZ DIE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The HMC637A-SX, produced by Analog Devices Inc., is a GaAs MMIC (Monolithic Microwave Integrated Circuit) MESFET Distributed Power Amplifier. This component operates across a wide frequency range from DC to 6 GHz, making it highly versatile for various applications. It provides 14 dB of gain and is characterized by its excellent gain flatness of ±0.5 dB across its operating frequency range. The amplifier is designed to deliver +30.5 dBm of output power at 1 dB gain compression and has an output third-order intercept point (OIP3) of +41 dBm. It requires a supply voltage of +12V and a typical supply current of 400 mA.

Key Specifications

Parameter Value Units
Frequency Range DC - 6 GHz
Gain 14 dB
Gain Flatness ±0.5 dB
Output Power for 1 dB Compression (P1dB) +30.5 dBm
Output Third-Order Intercept Point (OIP3) +41 dBm
Input Return Loss 14 dB
Output Return Loss 18 dB
Supply Voltage +12V
Supply Current 400 mA
Noise Figure 12 dB (2.0 GHz to 6.0 GHz)
Operating Temperature -55 to +85 °C
Storage Temperature -65 to +150 °C
Package Type Die
Mounting Type Surface Mount

Key Features

  • Internally matched RF I/Os to 50 Ω, facilitating easy integration into Multi-Chip-Modules (MCMs).
  • Excellent gain flatness across the frequency range, making it ideal for applications requiring stable gain performance.
  • High output power and high linearity, with +30.5 dBm P1dB and +41 dBm OIP3.
  • Compact die package suitable for high-volume surface-mount technology (SMT) assembly.
  • Robust thermal performance with a thermal resistance of 10.5 °C/W and a maximum channel temperature of 175 °C.

Applications

  • Telecom Infrastructure: Suitable for various telecommunications applications due to its wide frequency range and high performance.
  • Microwave Radio & VSAT: Ideal for satellite communications and microwave radio systems.
  • Military & Space: Used in military and space applications where high reliability and performance are critical.
  • Test Instrumentation: Employed in test and measurement equipment requiring high-frequency amplification.
  • Fiber Optics: Can be used in fiber optic systems for amplification needs.

Q & A

  1. What is the frequency range of the HMC637A-SX?

    The HMC637A-SX operates from DC to 6 GHz.

  2. What is the gain of the HMC637A-SX?

    The gain of the HMC637A-SX is 14 dB.

  3. What is the output power for 1 dB compression (P1dB) of the HMC637A-SX?

    The output power for 1 dB compression is +30.5 dBm.

  4. What is the supply voltage and current for the HMC637A-SX?

    The supply voltage is +12V, and the typical supply current is 400 mA.

  5. What are the typical applications of the HMC637A-SX?

    It is used in telecom infrastructure, microwave radio & VSAT, military & space, test instrumentation, and fiber optics.

  6. What is the noise figure of the HMC637A-SX?

    The noise figure is 12 dB from 2.0 GHz to 6.0 GHz.

  7. What is the operating temperature range of the HMC637A-SX?

    The operating temperature range is -55 to +85 °C.

  8. How is the HMC637A-SX packaged?

    The HMC637A-SX is packaged as a die, suitable for surface mount technology (SMT) assembly.

  9. What is the thermal resistance of the HMC637A-SX?

    The thermal resistance is 10.5 °C/W.

  10. Is the HMC637A-SX internally matched to 50 Ω?

    Yes, the RF I/Os are internally matched to 50 Ω.

Product Attributes

Frequency:0Hz ~ 6GHz
P1dB:30.5dBm
Gain:14dB
Noise Figure:12dB
RF Type:VSAT
Voltage - Supply:12V
Current - Supply:400mA
Test Frequency:0 ~ 6GHz
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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In Stock

$360.33
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HMC637A
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IC RF AMP VSAT 0HZ-6GHZ DIE

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