Overview
The HMC373LP3ETR is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier (LNA) produced by Analog Devices Inc. This amplifier integrates a low loss LNA bypass mode and is designed for operation between 700 and 1000 MHz. It is particularly suited for GSM, GPRS, EDGE, CDMA, and W-CDMA cellular basestation front-end receivers. The HMC373LP3ETR offers a noise figure of 0.9 dB, a gain of 14 dB, and an output IP3 of +35 dBm, all from a single +5V supply at 90 mA. The amplifier features minimal external component requirements for optimizing RF input match, RF ground, and DC bias.
Key Specifications
| Parameter | LNA Mode | Bypass Mode | Units |
|---|---|---|---|
| Frequency Range | 700 - 1000 MHz | 700 - 1000 MHz | MHz |
| Gain | 11.5 - 14 dB | -2.8 - -2.0 dB | dB |
| Noise Figure | 0.9 - 1.4 dB | - | dB |
| Input Return Loss | 25 - 30 dB | - | dB |
| Output Return Loss | 11 - 25 dB | - | dB |
| Reverse Isolation | 19 dB | - | dB |
| Power for 1dB Compression (P1dB) | 17 - 21 dBm | - | dBm |
| Saturated Output Power (Psat) | 22.5 dBm | - | dBm |
| Third Order Intercept (IP3) | 35 dBm | - | dBm |
| Supply Current (Idd) | 90 mA | 10 μA | mA / μA |
Key Features
- High dynamic range GaAs MMIC Low Noise Amplifier
- Low loss LNA bypass mode
- Operates between 700 and 1000 MHz
- Noise figure of 0.9 dB, gain of 14 dB, and output IP3 of +35 dBm
- Single +5V supply at 90 mA
- Minimal external components required for RF input match, RF ground, and DC bias
- Input and output return losses of 28 dB and 12 dB respectively
- Low power consumption in bypass mode (10 μA)
- 16-Lead Lead Frame Chip Scale Package (LFCSP) with a body size of 3 x 3 mm
Applications
- GSM, GPRS, and EDGE cellular basestation front-end receivers
- CDMA and W-CDMA cellular basestation front-end receivers
- Private Land Mobile Radio systems
Q & A
- What is the frequency range of the HMC373LP3ETR?
The HMC373LP3ETR operates between 700 and 1000 MHz.
- What are the key performance metrics of the HMC373LP3ETR?
The amplifier has a noise figure of 0.9 dB, a gain of 14 dB, and an output IP3 of +35 dBm.
- How is the bypass mode activated in the HMC373LP3ETR?
The bypass mode is activated by presenting an open circuit to a single control line, reducing the current consumption to 10 μA.
- What is the supply voltage and current for the HMC373LP3ETR in LNA mode?
The supply voltage is +5V, and the supply current is 90 mA in LNA mode.
- What is the package type and size of the HMC373LP3ETR?
The package is a 16-Lead Lead Frame Chip Scale Package (LFCSP) with a body size of 3 x 3 mm.
- What are the typical applications for the HMC373LP3ETR?
The typical applications include GSM, GPRS, EDGE, CDMA, and W-CDMA cellular basestation front-end receivers, as well as Private Land Mobile Radio systems.
- How does the HMC373LP3ETR minimize external component requirements?
The amplifier requires minimal external components to optimize the RF input match, RF ground, and DC bias.
- What is the reverse isolation of the HMC373LP3ETR?
The reverse isolation is 19 dB.
- What is the saturated output power (Psat) of the HMC373LP3ETR?
The saturated output power (Psat) is 22.5 dBm.
- Is the HMC373LP3ETR RoHS-compliant?
Yes, the HMC373LP3ETR is RoHS-compliant.
