Infineon Expands Gate Drive ICs for EV Traction Inverters
Electric vehicles are reshaping the automotive industry with advances in power electronics playing a critical role in improving efficiency and performance. One of the most critical components in any EV powertrain is the traction inverter, which converts DC power from the battery into AC power for the motor.
Learn more from Infineon about traction inverters. Video used courtesy of EEJournal
As demand grows for higher efficiency and reliability, semiconductor technology must evolve to keep pace. Similarly, as power semiconductor tech advances, gate drivers are constantly being reimagined to keep up with faster switching speeds and higher power densities.
Infineon has introduced new isolated gate driver ICs for traction inverters in EVs. These additions to the EiceDRIVER family support the latest IGBT and silicon carbide (SiC) technologies, helping improve efficiency, reliability, safety, and overall performance in electric powertrains.
EiceDriver for EV traction inverters. Adapted from images used courtesy of Infineon and Canva
Infineon’s Gate Driver ICs for IGBT and SiC Inverters
The lineup includes two series: 1EDI302xAS for IGBT-based inverters and 1EDI303xAS for SiC or hybrid systems. They are compatible with Infineon’s HybridPACK Drive G2 Fusion module, which combines silicon and SiC power devices in a plug-and-play solution.
There are five product variants. The 1EDI3025AS, 1EDI3026AS, and 1EDI3035AS feature a 20 A output stage, suitable for inverters up to 300 kW. The 1EDI3028AS and 1EDI3038AS offer a 15 A output stage, ideal for entry-level battery electric vehicles, plug-in hybrid EV inverters, and externally excited synchronous machines.
Infineon has included key safety and monitoring features. These ICs meet automotive standards, with AEC qualification and ISO 26262 compliance. They provide reinforced insulation per VDE 0884-17:2021-10 and include integrated self-tests for desaturation protection, overcurrent protection, and a new safe-state interface.
Isolated gate driver ICs for EVs. Image used courtesy of Infineon
Improved Short-Circuit Performance
A tunable soft-off function improves short-circuit performance by gradually shutting down the external power switch instead of an abrupt turn-off. This reduces overvoltage stress on IGBTs and SiC MOSFETs, improving system reliability. Engineers can fine-tune the turn-off speed by selecting an appropriate external resistor.
For temperature monitoring, the ICs feature a continuously sampling 12-bit delta-sigma ADC with an integrated current source. This allows direct voltage reading from temperature measurement diodes or NTCs, helping maintain optimal operating conditions.
Infineon has designed these gate drivers to integrate easily into power stage designs. They come in a compact PG-DSO-20 package and are optimized for fast development cycles. Their compatibility with the latest power modules allows for straightforward system integration.
Ultimately, Infineon’s latest gate driver ICs mark a step forward in power electronics for EVs. By supporting the latest IGBT and SiC technologies, they help improve energy efficiency, system reliability, and overall vehicle performance. Their advanced safety features and design flexibility simplify integration for engineers, reducing development time and enhancing system protection.
The EiceDRIVER ICs are available for order, with samples ready for evaluation. They offer a robust solution for traction inverters in high-performance and cost-effective EV platforms, supporting the shift toward more efficient electric mobility.
