TLP250(D4INV-TP5,F
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Toshiba Semiconductor and Storage TLP250(D4INV-TP5,F

Manufacturer No:
TLP250(D4INV-TP5,F
Manufacturer:
Toshiba Semiconductor and Storage
Package:
Tape & Reel (TR)
Description:
PHOTOCOUPLER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TLP250(D4INV-TP5,F) is a photocoupler produced by Toshiba Semiconductor and Storage. It is designed for high-speed switching applications, particularly for driving the gates of IGBTs (Insulated Gate Bipolar Transistors) and power MOSFETs. This component consists of a GaAlAs infrared emitting diode and an integrated photodetector, packaged in an 8-lead DIP or surface mount configuration. The TLP250 is known for its high isolation voltage, strong drive capability, and fast switching speed, making it suitable for various industrial and power electronics applications.

Key Specifications

Characteristic Symbol Condition Value Unit
Isolation Voltage BV_S t = 60 sec 2500 Vrms
Supply Current (Max) I_CC - 11 mA
Threshold Input Current (L/H) I_FLH - 5 mA
Output Current (Peak) (Max) I_OP - ±1.5 A
Propagation Delay Time (H/L) (Max) tpHL - 500 ns
Propagation Delay Time (L/H) (Max) tpLH - 500 ns
Operating Temperature Range T_opr - -20 to 85 °C
Storage Temperature Range T_stg - -55 to 125 °C
Forward Voltage (Typ) V_F IF = 10 mA, Ta = 25 °C 1.6 V
Input Capacitance C_T V = 0 V, Ta = 25 °C 1 x 10^12 Ω

Key Features

  • High Isolation Voltage: The TLP250 offers an isolation voltage of 2500 Vrms, ensuring electrical isolation between the input and output circuits.
  • Strong Drive Capability: It can drive high currents up to ±1.5 A, making it suitable for IGBT and power MOSFET gate drive applications.
  • Fast Switching Speed: The component has propagation delay times of 500 ns (max) for both rising and falling edges, enabling high-speed switching.
  • Optical Coupling: The use of a GaAlAs infrared emitting diode and an integrated photodetector provides reliable optical coupling.
  • RoHS Compliance: The TLP250 is lead-free and RoHS compliant, meeting environmental regulations.
  • UL and VDE Approvals: It is approved by UL 1577 and VDE (EN 60747-5-5), ensuring safety and reliability in various applications.

Applications

  • Inverter Systems: Widely used in three-phase voltage source inverters, including those in industrial inverters and PV inverters.
  • IGBT and MOSFET Gate Drive: Suitable for driving the gates of IGBTs and power MOSFETs in high-power applications.
  • Inverter Air Conditioners: Used in the control circuits of inverter air conditioners for efficient and reliable operation.
  • Induction Cooktops: Applied in the control circuits of induction cooktops due to its high-speed switching and isolation capabilities.

Q & A

  1. What is the isolation voltage of the TLP250?

    The isolation voltage of the TLP250 is 2500 Vrms.

  2. What is the maximum output current of the TLP250?

    The maximum output current of the TLP250 is ±1.5 A.

  3. What is the propagation delay time of the TLP250?

    The propagation delay times (tpLH and tpHL) are both 500 ns (max).

  4. What are the operating and storage temperature ranges of the TLP250?

    The operating temperature range is -20 to 85 °C, and the storage temperature range is -55 to 125 °C.

  5. Is the TLP250 RoHS compliant?

    Yes, the TLP250 is lead-free and RoHS compliant.

  6. What safety standards does the TLP250 meet?

    The TLP250 meets UL 1577, cUL (CSA Component Acceptance Service No. 5A), and EN 60747-5-5 (VDE) safety standards.

  7. What is the typical forward voltage of the TLP250?

    The typical forward voltage (V_F) is 1.6 V at IF = 10 mA and Ta = 25 °C.

  8. Can the TLP250 be used in high-speed switching applications?

    Yes, the TLP250 is designed for high-speed switching applications with fast propagation delay times.

  9. What types of packages are available for the TLP250?

    The TLP250 is available in 8-lead DIP and surface mount packages.

  10. Is the TLP250 suitable for IGBT and MOSFET gate drive applications?

    Yes, the TLP250 is specifically designed for driving the gates of IGBTs and power MOSFETs.

Product Attributes

Technology:- 
Number of Channels:- 
Voltage - Isolation:- 
Common Mode Transient Immunity (Min):- 
Propagation Delay tpLH / tpHL (Max):- 
Pulse Width Distortion (Max):- 
Rise / Fall Time (Typ):- 
Current - Output High, Low:- 
Current - Peak Output:- 
Voltage - Forward (Vf) (Typ):- 
Current - DC Forward (If) (Max):- 
Voltage - Output Supply:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Approval Agency:- 
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