Overview
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed by Texas Instruments for driving SiC MOSFETs and IGBTs up to 900V DC operating voltage. This device is distinguished by its advanced protection features, best-in-class dynamic performance, and robustness. It is particularly suited for automotive applications, having achieved AEC-Q100 qualification. The gate driver utilizes SiO2 capacitive isolation technology, ensuring high isolation barriers and immunity to common mode noise.
Key Specifications
Specification | Value |
---|---|
Package | SOIC (DW) - 16 pins |
Operating Temperature Range | -40°C to 150°C |
Maximum Output Drive Voltage (VDD-VEE) | 33V |
Peak Drive Current | ±10A |
Common Mode Transient Immunity (CMTI) | >150V/ns |
Response Time for Fast DESAT Protection | 200ns |
Internal Active Miller Clamp | 4A |
Soft Turn-off Current Under Fault Conditions | 400mA |
Isolation Working Voltage | Up to 636VRMS |
Surge Immunity | 6kVPK |
Propagation Delay | 130ns (maximum) |
Pulse/Part Skew | 30ns (maximum) |
Operating Junction Temperature | -40°C to +150°C |
Key Features
- 3kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 3A and CDM ESD classification level C3
- Drives SiC MOSFETs and IGBTs up to 900Vpk
- High peak drive current and high CMTI
- ±10A drive strength and split output
- Fast short circuit detection and fault reporting
- Active Miller clamp and input/output side power supply UVLO
- Isolated analog sensor with PWM output for temperature or voltage sensing
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40ns noise transients and pulses on input pins
- 12V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
- SOIC-16 DW package with creepage and clearance distance > 8mm
Applications
The UCC21759-Q1 is primarily designed for automotive applications, particularly in systems that require high reliability and robustness. It is suitable for driving SiC MOSFETs and IGBTs in various power electronics systems, including:
- Electric vehicle (EV) and hybrid electric vehicle (HEV) powertrains
- Automotive DC-DC converters and battery management systems
- High-power industrial drives and motor control systems
- Renewable energy systems, such as solar and wind power inverters
Q & A
- What is the maximum operating voltage of the UCC21759-Q1?
The UCC21759-Q1 can operate with SiC MOSFETs and IGBTs up to 900V DC.
- What is the isolation technology used in the UCC21759-Q1?
The device uses SiO2 capacitive isolation technology.
- What are the key protection features of the UCC21759-Q1?
The device includes fast short circuit detection, fault reporting, active Miller clamp, and input/output side power supply UVLO.
- What is the maximum drive current of the UCC21759-Q1?
The device has a peak drive current of ±10A.
- What is the common mode transient immunity (CMTI) of the UCC21759-Q1?
The CMTI is greater than 150V/ns.
- What is the response time for fast DESAT protection in the UCC21759-Q1?
The response time is 200ns.
- Does the UCC21759-Q1 support temperature sensing?
Yes, it includes an isolated analog sensor with PWM output for temperature sensing using NTC, PTC, or thermal diode.
- What is the operating temperature range of the UCC21759-Q1?
The device operates in the temperature range of -40°C to +150°C.
- Is the UCC21759-Q1 qualified for automotive applications?
Yes, it is AEC-Q100 qualified.
- What is the package type and pin count of the UCC21759-Q1?
The device is packaged in a SOIC-16 DW package.
- What safety certifications does the UCC21759-Q1 have?
The device has safety-related certifications including 4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17).