TS3DDR4000ZBAR
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Texas Instruments TS3DDR4000ZBAR

Manufacturer No:
TS3DDR4000ZBAR
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC DDR SWITCH/MUX 48NFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TS3DDR4000ZBAR, produced by Texas Instruments, is a high-speed 12-bit 1:2 or 2:1 switch/multiplexer designed for DDR2, DDR3, and DDR4 memory bus systems. This component offers wide compatibility with various signaling standards, including POD_12, SSTL_12, SSTL_15, and SSTL_18. It is engineered to provide high bandwidth, low insertion loss, and minimal propagation delay, making it ideal for applications requiring high-speed signal switching.

The TS3DDR4000ZBAR features a proprietary architecture that delivers a differential -3dB bandwidth of up to 6 GHz and single-ended bandwidth of 5.6 GHz. It is 1.8 V logic compatible and includes bi-directional switches for enhanced design flexibility. The device also supports a low-power mode, where all channels become high-Z and the device consumes minimal power.

Key Specifications

Parameter Min Typical Max Unit
Bandwidth (single-ended) - 5.6 GHz - GHz
Bandwidth (differential) - 6.0 GHz - GHz
Switch On-Resistance (RON) - 8 Ω - Ω
Bit-to-Bit Skew 3 ps - 6 ps ps
Crosstalk - -34 dB - dB
Operating Current - 40 µA - µA
Low-Power Mode Current - 2 µA - µA
VDD Range 2.375 V - 3.6 V V
Operating Temperature Range -40 °C - 85 °C °C
Package Type - NFBGA (48) - -
Package Size - 8.00 mm x 3.00 mm - mm

Key Features

  • High Bandwidth: Up to 5.6 GHz single-ended and 6.0 GHz differential bandwidth.
  • Low Switch On-Resistance (RON): Typical 8 Ω.
  • Low Bit-to-Bit Skew: Typical 3 ps, maximum 6 ps across all channels.
  • Low Crosstalk: Typical -34 dB at 1067 MHz.
  • Low Operating Current: Typical 40 µA.
  • Low-Power Mode: Consumes less than 5 µA when in low-power mode.
  • IOFF Protection: Prevents current leakage in powered-down state.
  • Bi-Directional Switches: All switches are bi-directional for added design flexibility.
  • ESD Performance: 3-kV Human Body Model and 1-kV Charged Device Model.
  • Signaling Compatibility: Supports POD_12, SSTL_12, SSTL_15, and SSTL_18 signaling.

Applications

  • NVDIMM Modules: Used in Non-Volatile Dual In-line Memory Module applications to provide reliable data backups during power failures.
  • Enterprise Data Systems and Servers: Suitable for high-speed signal switching in enterprise environments.
  • Notebook/Desktop PCs: Used in general DDR3/DDR4 signal switching applications.
  • General High-Speed Signal Switching: Applicable in various high-speed signal switching scenarios requiring minimal signal degradation.
  • Load Isolation: Used to isolate loading in communication channels, particularly in Solid-State Drives (SSDs) with multiple flash memory devices.

Q & A

  1. What is the typical bandwidth of the TS3DDR4000ZBAR?

    The TS3DDR4000ZBAR has a typical single-ended bandwidth of 5.6 GHz and a differential bandwidth of 6.0 GHz.

  2. What is the switch on-resistance (RON) of the TS3DDR4000ZBAR?

    The switch on-resistance (RON) is typically 8 Ω.

  3. What is the bit-to-bit skew of the TS3DDR4000ZBAR?

    The bit-to-bit skew is typically 3 ps and a maximum of 6 ps across all channels.

  4. What is the operating current of the TS3DDR4000ZBAR?

    The operating current is typically 40 µA.

  5. Does the TS3DDR4000ZBAR support low-power mode?

    Yes, it supports a low-power mode where all channels become high-Z and the device consumes less than 5 µA.

  6. What signaling standards does the TS3DDR4000ZBAR support?

    The TS3DDR4000ZBAR supports POD_12, SSTL_12, SSTL_15, and SSTL_18 signaling standards.

  7. What is the package type and size of the TS3DDR4000ZBAR?

    The package type is NFBGA (48) and the size is 8.00 mm x 3.00 mm.

  8. What are the typical applications of the TS3DDR4000ZBAR?

    Typical applications include NVDIMM modules, enterprise data systems and servers, notebook/desktop PCs, and general high-speed signal switching.

  9. How does the TS3DDR4000ZBAR handle power failures in NVDIMM applications?

    In NVDIMM applications, the TS3DDR4000ZBAR helps route DDR signals to save data from DRAM to NAND Flash during power failures, ensuring data integrity.

  10. What is the purpose of the IOFF protection in the TS3DDR4000ZBAR?

    The IOFF protection prevents current leakage in the powered-down state, ensuring no back-powering of the device when VDD is 0 V.

Product Attributes

Applications:Memory
Multiplexer/Demultiplexer Circuit:2:1
Switch Circuit:- 
Number of Channels:1
On-State Resistance (Max):11.2Ohm
Voltage - Supply, Single (V+):2.375V ~ 3.6V
Voltage - Supply, Dual (V±):- 
-3db Bandwidth:5.6GHz
Features:DDR2, DDR3, DDR4
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFBGA
Supplier Device Package:48-NFBGA (8x3)
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