TS3DDR3812RUAR
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Texas Instruments TS3DDR3812RUAR

Manufacturer No:
TS3DDR3812RUAR
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC MUX/DEMUX DDR3 1:2 42WQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TS3DDR3812RUAR is a 12-channel, 1:2 multiplexer/demultiplexer switch designed specifically for DDR3 applications. Produced by Texas Instruments, this component operates from a 3 to 3.6 V supply and is optimized for high-speed signal switching. It features low and flat ON-state resistance and low I/O capacitance, enabling a typical bandwidth of 1.675 GHz. The switch is divided into two banks of six bits, controlled independently by digital inputs SEL1 and SEL2, allowing flexible routing of DDR3 signals. An additional enable input (EN) allows the entire chip to be placed into a high-impedance (Hi-Z) state when not in use.

Key Specifications

Parameter Min Typical Max Unit
VCC Supply Voltage 3 - 3.6 V
Propagation Delay (tpd) - 40 - ps
Bit-to-Bit Skew (tsk(o)) - 6 30 ps
ON-State Resistance (rON) - 8 - Ω
Input/Output Capacitance (CON) - 5.6 - pF
Crosstalk (XTALK) at 250 MHz - -43 - dB
Bandwidth (BW) - 1.675 - GHz
Operating Temperature Range -40 - 85 °C
Package Type - - - 42-pin RUA (9 × 3.5 mm, 0.5 mm pitch)

Key Features

  • Compatible with DDR3 SDRAM Standard (JESD79-3D)
  • DDR3 signal switching
  • Support for DIMM modules
  • Wide bandwidth of 1.675 GHz
  • Low propagation delay (tpd = 40 ps Typ)
  • Low bit-to-bit skew (tsk(o) = 6 ps Typ)
  • Low and flat ON-state resistance (rON = 8 Ω Typ)
  • Low input/output capacitance (CON = 5.6 pF Typ)
  • Low crosstalk (XTALK = –43 dB, Typ at 250 MHz)
  • VCC operating range from 3 V to 3.6 V
  • Rail-to-rail switching on data I/O ports (0 to VCC)
  • Separate switch control logic for upper and lower 6-channels
  • Dedicated enable logic supports Hi-Z mode
  • IOFF protection prevents current leakage in powered-down state (VCC = 0 V)
  • ESD performance tested per JESD22 – 2000 V Human Body Model and 1000 V Charged Device Model

Applications

  • Notebook and desktop PCs
  • Servers
  • Memory applications
  • Analog/digital video applications
  • LAN and other high-speed signal switching applications

Q & A

  1. What is the primary function of the TS3DDR3812RUAR?

    The TS3DDR3812RUAR is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications.

  2. What is the operating voltage range of the TS3DDR3812RUAR?

    The operating voltage range is from 3 V to 3.6 V.

  3. What is the typical bandwidth of the TS3DDR3812RUAR?

    The typical bandwidth is 1.675 GHz.

  4. How is the switch controlled in the TS3DDR3812RUAR?

    The switch is controlled by two digital inputs, SEL1 and SEL2, which independently control the upper and lower 6-bit DDR3 sources.

  5. What is the significance of the EN input in the TS3DDR3812RUAR?

    The EN input allows the entire chip to be placed into a high-impedance (Hi-Z) state when not in use.

  6. What kind of ESD protection does the TS3DDR3812RUAR have?

    The TS3DDR3812RUAR has ESD performance tested per JESD22 – 2000 V Human Body Model and 1000 V Charged Device Model.

  7. What is the package type and dimensions of the TS3DDR3812RUAR?

    The package type is 42-pin RUA with dimensions of 9 × 3.5 mm and a 0.5 mm pitch.

  8. What are some common applications of the TS3DDR3812RUAR?

    Common applications include notebook and desktop PCs, servers, memory applications, analog/digital video applications, and LAN.

  9. What is the typical propagation delay of the TS3DDR3812RUAR?

    The typical propagation delay is 40 ps.

  10. What is the bit-to-bit skew of the TS3DDR3812RUAR?

    The bit-to-bit skew is typically 6 ps.

  11. How does the TS3DDR3812RUAR prevent current leakage in the powered-down state?

    The TS3DDR3812RUAR has IOFF protection to prevent current leakage when VCC is 0 V.

Product Attributes

Applications:Memory
Multiplexer/Demultiplexer Circuit:2:1
Switch Circuit:- 
Number of Channels:12
On-State Resistance (Max):12Ohm
Voltage - Supply, Single (V+):3V ~ 3.6V
Voltage - Supply, Dual (V±):- 
-3db Bandwidth:1.675GHz
Features:DDR3
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:42-WFQFN Exposed Pad
Supplier Device Package:42-WQFN (3.5x9)
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