Overview
The TPS73701DRBR is a 1A low-dropout (LDO) voltage regulator produced by Texas Instruments. It utilizes an advanced BiCMOS process to achieve high precision, very low dropout voltages, and low ground pin current. This regulator is designed with an NMOS pass transistor in a voltage-follower configuration, making it relatively insensitive to the output capacitor value and ESR. This allows for a wide variety of load configurations and excellent load transient response, even with small output capacitors. The device is particularly suited for portable applications due to its low current consumption in shutdown mode (less than 20nA) and is protected by thermal shutdown and foldback current limit.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Input Voltage Range | 2.2 | 5.5 | V | |
| Output Voltage Range (Fixed Versions) | 1.2 | 5.5 | V | |
| Output Voltage Accuracy (Nominal) | -1 | 1 | 1 | % |
| Output Voltage Accuracy (Over Line, Load, and Temperature) | -2 | 2 | % (Legacy Silicon), 1.5% (New Silicon) | |
| Dropout Voltage (Typical at 1A) | 130mV (Legacy Silicon) | 122mV (New Silicon) | mV | |
| Short-Circuit Current | 450mA (Legacy Silicon) | 510mA (New Silicon) | mA | |
| Reverse Leakage Current | 0.1 | µA | ||
| Ground Pin Current (IOUT = 1A) | 1300µA (Legacy Silicon) | 880µA (New Silicon) | µA | |
| Shutdown Current | 20nA | nA | ||
| Operating Temperature Range | -40 | 125 | °C |
Key Features
- Stable operation with 1µF or larger ceramic output capacitor.
- Ultra-low dropout voltage, with typical values of 130mV (legacy silicon) and 122mV (new silicon) at 1A.
- Excellent load transient response, even with small output capacitors.
- NMOS topology delivering low reverse leakage current.
- High output voltage accuracy, with overall accuracy of 1.5% (new silicon) over line, load, and temperature.
- Less than 20nA typical current consumption in shutdown mode.
- Thermal shutdown and foldback current limit for fault protection.
- Available in multiple fixed and adjustable output voltage versions.
Applications
The TPS73701DRBR is designed for a variety of applications, particularly those requiring low dropout voltages and high precision. Key application areas include:
- Portable electronic devices due to its low current consumption in shutdown mode and high efficiency.
- Power supply systems in consumer electronics, such as smartphones, tablets, and other handheld devices.
- Industrial control systems and automation where stable and accurate voltage regulation is crucial.
- Medical devices that require reliable and precise voltage regulation.
Q & A
- What is the input voltage range of the TPS73701DRBR?
The input voltage range is from 2.2V to 5.5V.
- What is the typical dropout voltage of the TPS73701DRBR?
The typical dropout voltage is 130mV for legacy silicon and 122mV for new silicon at 1A.
- What is the output voltage accuracy of the TPS73701DRBR?
The output voltage accuracy is ±1% nominal and ±1.5% (new silicon) over line, load, and temperature).
- What kind of protection features does the TPS73701DRBR have?
The device is protected by thermal shutdown and foldback current limit).
- What is the typical shutdown current of the TPS73701DRBR?
The typical shutdown current is less than 20nA).
- What types of output voltage versions are available for the TPS73701DRBR?
The device is available in multiple fixed and adjustable output voltage versions).
- What is the operating temperature range of the TPS73701DRBR?
The operating temperature range is from -40°C to 125°C).
- Is the TPS73701DRBR suitable for portable applications?
Yes, it is designed for portable applications due to its low current consumption in shutdown mode and high efficiency).
- What kind of capacitor is recommended for the output of the TPS73701DRBR?
The device is stable with 1µF or larger ceramic output capacitors).
- How does the NMOS topology benefit the TPS73701DRBR?
The NMOS topology allows for very low dropout voltage, low reverse leakage current, and excellent load transient response).
