Overview
The DRV8353RSRGZT is a highly-integrated three-phase smart gate driver from Texas Instruments, designed for brushless DC (BLDC) motor applications. This device is part of the DRV835x family, which includes field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The DRV8353RSRGZT features a smart gate drive (SGD) architecture that minimizes the need for external components typically required for MOSFET slew rate control and protection circuits. It also optimizes dead time to prevent shoot-through conditions and reduces electromagnetic interference (EMI) through adjustable slew rate control.
Key Specifications
Parameter | Value |
---|---|
Package | VQFN (RGZ) with 48 pins |
Operating Temperature Range | -40°C to 125°C |
Input Voltage Range | 9 to 100 V |
Peak Source Current | 50 mA to 1 A |
Peak Sink Current | 100 mA to 2 A |
Buck Regulator Operating Voltage Range | 6 to 95 V |
Buck Regulator Output Capability | 2.5 to 75 V, 350 mA |
Current Shunt Amplifiers Gain | Adjustable (5, 10, 20, 40 V/V) |
PWM Modes | 6x, 3x, 1x, and independent |
Interface | SPI or hardware interface |
Low-Power Sleep Mode Current | 20 µA at VVM = 48 V |
Key Features
- Triple half-bridge gate driver with optional integrated buck regulator and triple low-side current shunt amplifiers.
- Smart gate drive architecture with adjustable slew rate control for EMI performance and VGS handshake to prevent shoot-through.
- Integrated gate driver power supplies, including high-side doubler charge pump and low-side linear regulator.
- Integrated LM5008A buck regulator with 2.5 to 75 V, 350 mA output capability.
- Adjustable gain (5, 10, 20, 40 V/V) current shunt amplifiers with bidirectional or unidirectional support.
- Support for 6x, 3x, 1x, and independent PWM modes, including 120° sensored operation.
- SPI or hardware interface available.
- Low-power sleep mode (20 µA at VVM = 48 V).
- Integrated protection features including VM undervoltage lockout (UVLO), gate drive supply undervoltage (GDUV), MOSFET VDS overcurrent protection (OCP), MOSFET shoot-through prevention, gate driver fault (GDF), thermal warning and shutdown (OTW/OTSD), and fault condition indicator (nFAULT).
Applications
- 3-phase brushless DC (BLDC) motor modules.
- Fans, blowers, and pumps.
- E-Bikes, E-scooters, and E-mobility.
- Power and garden tools, lawn mowers.
- Drones, robotics, and RC toys.
- Factory automation and textile machines.
Q & A
- What is the DRV8353RSRGZT used for?
The DRV8353RSRGZT is used for three-phase brushless DC (BLDC) motor applications, including field-oriented control (FOC), sinusoidal current control, and trapezoidal current control.
- What is the operating temperature range of the DRV8353RSRGZT?
The operating temperature range is -40°C to 125°C.
- What are the peak source and sink currents of the DRV8353RSRGZT?
The peak source current is 50 mA to 1 A, and the peak sink current is 100 mA to 2 A.
- Does the DRV8353RSRGZT have integrated protection features?
- What are the supported PWM modes?
The device supports 6x, 3x, 1x, and independent PWM modes.
- Can the DRV8353RSRGZT be controlled via SPI or hardware interface?
- What is the current consumption in low-power sleep mode?
The current consumption in low-power sleep mode is 20 µA at VVM = 48 V.
- Does the DRV8353RSRGZT have an integrated buck regulator?
- What are the applications of the DRV8353RSRGZT?
- How does the DRV8353RSRGZT mitigate electromagnetic interference (EMI)?