Overview
The DRV3245AQPHPRQ1 is a three-phase automotive gate driver unit developed by Texas Instruments. This device is designed for three-phase motor-drive applications and complies with the applicable requirements of ISO 26262 for functional safety, making it suitable for applications up to ASIL D. It features three half-bridge drivers capable of driving high-side and low-side N-channel MOSFETs, along with sophisticated protection and monitoring mechanisms. The device includes a charge-pump driver that supports 100% duty cycle and operates efficiently during low battery voltages, such as during cold-crank conditions.
The DRV3245AQPHPRQ1 integrates current-sense amplifiers, phase comparators, and SPI-based configuration, which reduces the bill of materials (BOM) and the space required on the printed circuit board (PCB). It also includes various protection features and diagnostic capabilities, making it a robust solution for automotive motor control systems.
Key Specifications
| Parameter | Description |
|---|---|
| Operating Voltage | 4.5 V to 45 V |
| Temperature Range | –40°C to +125°C |
| Package Type | Thermally-enhanced 48-Pin HTQFP |
| Current-Shunt Amplifiers | 3 current-shunt amplifiers (A/C Device), 2 current-shunt amplifiers (B Device), 3 current-shunt amplifiers (S Device) |
| PWM Input Control | 3-PWM or 6-PWM input control up to 20 kHz |
| Digital Interface | Supports both 3.3-V and 5-V digital interface |
| Serial Interface | Serial Peripheral Interface (SPI) |
| Gate Drive Current | Programmable peak gate drive currents up to 1 A |
| Protection Features | Internal regulators, battery voltage monitor, SPI CRC, clock monitor, analog built-in self test, programmable dead-time control, MOSFET shoot-through prevention, MOSFET VDS overcurrent monitors, gate-source voltage real-time monitor, overtemperature warning and shutdown |
Key Features
- Three half-bridge drivers for high-side and low-side N-channel MOSFETs
- Charge-pump driver for 100% duty cycle and low battery voltage support during cold-crank operation
- Current-sense amplifiers and phase comparators with SPI-based configuration
- Support for both 3.3-V and 5-V digital interface
- Serial Peripheral Interface (SPI) for configuration and diagnostics
- Sophisticated protection features including internal regulators, battery voltage monitor, SPI CRC, clock monitor, and more
- Programmable dead-time control and MOSFET shoot-through prevention
- Overtemperature warning and shutdown capabilities
- AEC-Q100 qualified for automotive applications and compliant with ISO 26262 for functional safety up to ASIL D
Applications
- 12-V automotive motor-control applications
- Electrical power steering (EPS, EHPS)
- Electrical brake and brake assist systems
- Transmissions and pumps
Q & A
- What is the operating voltage range of the DRV3245AQPHPRQ1?
The operating voltage range is from 4.5 V to 45 V.
- What is the temperature range for the DRV3245AQPHPRQ1?
The device operates within a temperature range of –40°C to +125°C.
- What type of package does the DRV3245AQPHPRQ1 come in?
The device is packaged in a thermally-enhanced 48-Pin HTQFP.
- What are the key protection features of the DRV3245AQPHPRQ1?
The device includes internal regulators, battery voltage monitor, SPI CRC, clock monitor, analog built-in self test, programmable dead-time control, MOSFET shoot-through prevention, MOSFET VDS overcurrent monitors, and gate-source voltage real-time monitor.
- Does the DRV3245AQPHPRQ1 support SPI interface?
- What are the typical applications of the DRV3245AQPHPRQ1?
The device is typically used in 12-V automotive motor-control applications, including electrical power steering, electrical brake and brake assist systems, and transmissions and pumps.
- Is the DRV3245AQPHPRQ1 compliant with any safety standards?
- What is the maximum PWM frequency supported by the DRV3245AQPHPRQ1?
The device supports 3-PWM or 6-PWM input control up to 20 kHz.
- Does the DRV3245AQPHPRQ1 have overtemperature protection?
- How does the DRV3245AQPHPRQ1 handle MOSFET shoot-through prevention?
The device includes programmable dead-time control and MOSFET shoot-through prevention mechanisms.
